Search Results - "LUSH, G. B"

B -coefficient in n-type GaAs by Lush, G.B.

“…Recombination and absorption measurements performed on double heterostructure films grown by metalorganic chemical vapor deposition are used to deduce B , the…”
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Thin film CdTe-CdS heterojunction solar cells on lightweight metal substrates by Singh, Vijay P., McClure, John C., Lush, G.B., Wang, W., Wang, X., Thompson, G.W., Clark, E.

“…An unconventional thin film CdTe-CdS solar cell device configuration, in which the substrate is molybdenum foil and CdS is deposited on top of CdTe, was…”
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Growth and characterization of CdTe by close spaced sublimation on metal substrates by Seth, A, Lush, G.B, McClure, J.C, Singh, V.P, Flood, D

“…CdS/CdTe solar cells have long been recognized for their terrestrial applications. These cells are usually fabricated on soda-lime glass substrates, but the…”
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Light and voltage dependence of the junction transport properties of CdTe/CdS photovoltaics by Linam, D.L., Singh, V.P., McClure, J.C., Lush, G.B., Mathew, X., Sebastian, P.J.

“…The J– V curve of CdTe/CdS photovoltaics does not consist of a simple superposition of a loss current and a light generated current with a considerable loss in…”
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Foil mounted thin-film solar cells for space and terrestrial applications by McClure, J.C, Singh, V.P, Lush, G.B, Clark, E, Thompson, G

“…The developing photovoltaic market for civilian communications satellites has caused a reassessment of the traditional single-crystal cells used in space…”
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Microsecond lifetimes and low interface recombination velocities in moderately doped n-GaAs thin films by LUSH, G. B, MELLOCH, M. R, LUNDSTROM, M. S, LEVI, D. H, AHRENKIEL, R. K, MACMILLAN, H. F

“…We have observed lifetimes greater than 1 μs in moderately doped, thin film, n-GaAs/Al0.3Ga0.7As double heterostructure membranes formed by etching away the…”
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Minority‐carrier lifetime and photon recycling in n‐GaAs by Ahrenkiel, R. K., Keyes, B. M., Lush, G. B., Melloch, M. R., Lundstrom, M. S., MacMillan, H. F.

“…We are reporting here the hole or minority‐carrier lifetime in n‐type GaAs over a concentration range from 1 × 1017 to 2 × 1018 cm−3. The lifetimes were…”
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Electro-optical characterization and modeling of thin film CdS–CdTe heterojunction solar cells by Singh, V.P., Linam, D.L., Dils, D.W., McClure, J.C., Lush, G.B.

“…Optoelectronic characteristics of thin film CdTe–CdS solar cells fabricated at four different laboratories were measured and analyzed. Current versus voltage…”
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High-efficiency Al0.22Ga0.78As solar cells grown by molecular beam epitaxy by Melloch, M. R., Tobin, S. P., Bajgar, C., Keshavarzi, A., Stellwag, T. B., Lush, G. B., Lundstrom, M. S., Emery, K.

“…The quality of pn junction photodetectors made of Al0.2Ga0.8As has been investigated as a first step in the optimization of tandem solar cells. We have…”
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Compensation of interfacial states located inside the "buffer-free"GaSb/GaAs (001) heterojunction via δ -doping by Jallipalli, A., Nunna, K., Kutty, M. N., Balakrishnan, G., Lush, G. B., Dawson, L. R., Huffaker, D. L.

“…We report the compensation of interfacial states formed by interfacial misfit dislocation (IMF) arrays via δ -doping. The IMF arrays are located inside the…”
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Temperature and illumination dependent junction transport in CdTe-CdS solar cells by Linam, D.L., Lush, G.B., Dils, D.W., Singh, V.P., McClure, J.C.

“…Various electrical and optical techniques have been used to study junction transport mechanisms in CdTe-CdS solar cells. Current density versus voltage (J-V)…”
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Light and voltage dependence of the junction transport properties of CdTe/CdS photovoltaics: CANCUN 2000 by LINAM, D. L, SINGH, V. P, MCCLURE, J. C, LUSH, G. B, MATHEW, X, SEBASTIAN, P. J

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Electro-optical characterization and modeling of thin film CdS-CdTe heterojunction solar cells: CANCUN'99 by SINGH, V. P, LINAM, D. L, DILS, D. W, MCCLURE, J. C, LUSH, G. B

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Teaching electronic devices using projects in lieu of exams by Lush, G.B.

“…Summary form only given. Reports changes in the structure and student assessment techniques of a junior-level course in electrical engineering, electronic…”
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Teaching electronic devices using projects in lieu of exams by Lush, G.B.

“…This paper reports changes in the structure and student assessment techniques of a junior level course in electrical engineering, Electronic Devices, the…”
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High-efficiency Al(0.22)Ga(0.78)As solar cells grown by molecular beam epitaxy by Melloch, M R, Keshavarzi, A, Stellwag, T B, Lush, G B, Lundstrom, M S

“…The quality of pn junction photodetectors made of Al(0.2)Ga(0.8)As has been investigated as a first step in the optimization of tandem solar cells…”
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The physics of electronic devices as taught using computer-generated scientific visualizations and notes that are deliverable over the WWW by Lush, G.B.

“…The dynamic nature of the behavior of semiconductor devices begs for the application of computers and multimedia in developing scientific visualizations to aid…”
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High-efficiency AI0.22Ga0.78As solar cells grown by molecular beam epitaxy by MELLOCH, M. R, TOBIN, S. P, BAJGAR, C, KESHAVARZI, A, STELLWAG, T. B, LUSH, G. B, LUNDSTROM, M. S, EMERY, K

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Thin-film GaAs solar cells by epitaxial lift-off by Lush, G.B., Patkar, M.P., Young, M.P., Melloch, M.R., Lundstrom, M.S., Vernon, S.M., Gagnon, E.D., Geoffroy, L.M., Sanfacon, M.M.

“…The authors have performed basic characterization studies of thin-film GaAs n/p and p/n solar cells made by epitaxial lift-off. They find that the internal…”
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Determination of minority carrier lifetimes in n-type GaAs and their implications for solar cells by Lush, G.B., MacMillan, H.F., Keyes, B.M., Ahrenkiel, R.K., Melloch, M.R., Lundstrom, M.S.

“…A comprehensive study of n-type lifetimes versus doping concentration in selenium doped n-GaAs is detailed. By observing the photoluminescence delay of double…”
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