Search Results - "LURYI, Serge"

Quaternary InGaAsSb Thermophotovoltaic Diodes by Dashiell, Michael W., Beausang, John F., Ehsani, Hassan, Nichols, G. J., Depoy, David M., Danielson, Lee R., Talamo, Phil, Rahner, Kevin D., Brown, Edward J., Burger, Steven R., Fourspring, Patrick M., Topper, William F., Baldasaro, P. F., Wang, Christine A., Huang, Robin K., Connors, Michael K., Turner, George W., Shellenbarger, Zane A., Taylor, Gordon, Li, Jizhong, Martinelli, Ramon, Donetski, Dmitry, Anikeev, Sergei, Belenky, Gregory L., Luryi, Serge

“…In x Ga 1-x As y Sb 1-y thermophotovoltaic (TPV) diodes were grown lattice matched to GaSb substrates by metal-organic vapor phase epitaxy in the bandgap range…”
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Quantum capacitance devices by LURYI, S

“…Two-dimensional electron gas (2DEG) in a quantum well or inversion layer, unlike an ordinary grounded metallic plane, does not completely screen an applied…”
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High-Speed Stark Wavelength Tuning of MidIR Interband Cascade Lasers by Suchalkin, S., Kisin, M.V., Luryi, S., Belenky, G., Towner, F.J., Bruno, J.D., Tober, R.L.

“…Stark modulation of the wavelength of a midinfrared tunable interband cascade laser was studied. Wavelength modulation at frequencies exceeding 1 GHz was…”
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Frequency limit of double-barrier resonant-tunneling oscillators by LURYI, S

“…The speed of operation of negative differential resistance (NDR) devices based on resonant tunneling in a double-barrier quantum-well structure is considered…”
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Phonon enhanced inverse population in asymmetric double quantum wells by Stroscio, Michael A., Kisin, Mikhail, Belenky, Gregory, Luryi, Serge

“…Interwell optical-phonon-assisted transitions are studied in an asymmetric double-quantum-well heterostructure comprising one narrow and one wide coupled…”
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New approach to the high quality epitaxial growth of lattice-mismatched materials by LURYI, S, EPHRAIM SUHIR

“…We have reconsidered the problem of the critical layer thickness hc for growth of strained heterolayers on lattice-mismatched substrates, using a new approach…”
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Temperature controlled Lévy flights of minority carriers in photoexcited bulk n-InP by Subashiev, Arsen V., Semyonov, Oleg, Chen, Zhichao, Luryi, Serge

“…We study by photoluminescence the spatial distribution of minority carriers (holes) arising from their anomalous photon-assisted diffusion upon…”
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Direct observation of Lévy flights of holes in bulk n -doped InP by Luryi, Serge, Semyonov, Oleg, Subashiev, Arsen, Chen, Zhichao

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Urbach tail studies by luminescence filtering in moderately doped bulk InP by Subashiev, Arsen V., Semyonov, Oleg, Chen, Zhichao, Luryi, Serge

“…The shape of the photoluminescence line registered from a side edge of InP wafer is studied as a function of the distance from the excitation spot. The…”
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Temperature controlled LACOvy flights of minority carriers in photoexcited bulk n-InP by Subashiev, Arsen, Semyonov, Oleg, Chen, Zhichao, Luryi, Serge

“…We study by photoluminescence the spatial distribution of minority carriers (holes) arising from their anomalous photon-assisted diffusion upon…”
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Resonant tunneling of two-dimensional electrons through a quantum wire: a negative transconductance device by LURYI, S, CAPASSO, F

“…A novel three-terminal resonant-tunneling structure is proposed in which the double potential barrier is defined within the plane of a two-dimensional (2-D)…”
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Edge excitation geometry for studying intrinsic emission spectra of bulk n-InP by Semyonov, Oleg, Subashiev, Arsen, Chen, Zhichao, Luryi, Serge

“…The shape of the photoluminescence line excited at an edge face of InP wafer and registered from the broadside is used to investigate the intrinsic emission…”
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Correlation effects in sequential energy branching: An exactly solvable model of Fano statistics by Subashiev, Arsen V., Luryi, Serge

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Semiconductor scintillator based on photon recycling by Luryi, Serge, Subashiev, Arsen V.

“…Direct-bandgap semiconductor with high quantum radiative efficiency can operate as a scintillator despite being “opaque” to its own luminescence. An interband…”
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Photon assisted Lévy flights of minority carriers in n-InP by Semyonov, Oleg, Subashiev, Arsen V., Chen, Zhichao, Luryi, Serge

“…We study the photoluminescence spectra of n-doped InP bulk wafers, both in the reflection and the transmission geometries relative to the excitation beam. From…”
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Effects of thermal treatment on radiative properties of HVPE grown InP layers by Luryi, Serge, Semyonov, Oleg, Subashiev, Arsen, Abeles, Joseph, Chan, Winston, Shellenbarger, Zane, Metaferia, Wondwosen, Lourdudoss, Sebastian

“…•We studied radiative properties of 21μm thick InP layers grown by HVPE.•Radiative efficiency is comparable to best bulk InP virgin wafers.•Luminescence of…”
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High transconductance and large peak-to-valley ratio of negative differential conductance in three-terminal InGaAs/InAlAs real-space transfer devices by MENSZ, P. M, GARBINSKI, P. A, CHO, A. Y, SIVCO, D. L, LURYI, S

“…Three-terminal real-space transfer devices with improved room-temperature characteristics have been implemented in InGaAs/InAlAs/InGaAs heterostructures…”
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Rapid modulation of interband optical properties of quantum wells by intersubband absorption by GORFINKEL, V. B, LURYI, S

“…Intersubband absorption of radiation by a two-dimensional electron gas can be used to control the electron temperature and effect a significant modulation of…”
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Low-Power Amplifier for Readout Interface of Semiconductor Scintillator by Xiao Yun, Stanacevic, M., Luryi, S.

“…We present the design of a readout system, comprising a charge sensitive amplifier and a pulse shaper, that directly interfaces a semiconductor scintillator…”
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Charge injection logic by LURYI, S, MENSZ, P. M, PINTO, M. R, GARBINSKI, P. A, CHO, A. Y, SIVCO, D. L

“…The charge injection transistor is a semiconductor device based on transfer of hot electrons between separately contacted conducting layers. The nature of…”
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