Search Results - "LURYI, Serge"
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Quaternary InGaAsSb Thermophotovoltaic Diodes
Published in IEEE transactions on electron devices (01-12-2006)“…In x Ga 1-x As y Sb 1-y thermophotovoltaic (TPV) diodes were grown lattice matched to GaSb substrates by metal-organic vapor phase epitaxy in the bandgap range…”
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Quantum capacitance devices
Published in Applied physics letters (08-02-1988)“…Two-dimensional electron gas (2DEG) in a quantum well or inversion layer, unlike an ordinary grounded metallic plane, does not completely screen an applied…”
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High-Speed Stark Wavelength Tuning of MidIR Interband Cascade Lasers
Published in IEEE photonics technology letters (15-03-2007)“…Stark modulation of the wavelength of a midinfrared tunable interband cascade laser was studied. Wavelength modulation at frequencies exceeding 1 GHz was…”
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Frequency limit of double-barrier resonant-tunneling oscillators
Published in Applied physics letters (01-09-1985)“…The speed of operation of negative differential resistance (NDR) devices based on resonant tunneling in a double-barrier quantum-well structure is considered…”
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Phonon enhanced inverse population in asymmetric double quantum wells
Published in Applied physics letters (22-11-1999)“…Interwell optical-phonon-assisted transitions are studied in an asymmetric double-quantum-well heterostructure comprising one narrow and one wide coupled…”
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New approach to the high quality epitaxial growth of lattice-mismatched materials
Published in Applied physics letters (21-07-1986)“…We have reconsidered the problem of the critical layer thickness hc for growth of strained heterolayers on lattice-mismatched substrates, using a new approach…”
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Temperature controlled Lévy flights of minority carriers in photoexcited bulk n-InP
Published in Physics letters. A (10-01-2014)“…We study by photoluminescence the spatial distribution of minority carriers (holes) arising from their anomalous photon-assisted diffusion upon…”
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Direct observation of Lévy flights of holes in bulk n -doped InP
Published in Physical review. B, Condensed matter and materials physics (19-11-2012)Get full text
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Urbach tail studies by luminescence filtering in moderately doped bulk InP
Published in Applied physics letters (01-11-2010)“…The shape of the photoluminescence line registered from a side edge of InP wafer is studied as a function of the distance from the excitation spot. The…”
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Temperature controlled LACOvy flights of minority carriers in photoexcited bulk n-InP
Published in Physics letters. A (01-01-2014)“…We study by photoluminescence the spatial distribution of minority carriers (holes) arising from their anomalous photon-assisted diffusion upon…”
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Resonant tunneling of two-dimensional electrons through a quantum wire: a negative transconductance device
Published in Applied physics letters (15-12-1985)“…A novel three-terminal resonant-tunneling structure is proposed in which the double potential barrier is defined within the plane of a two-dimensional (2-D)…”
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Edge excitation geometry for studying intrinsic emission spectra of bulk n-InP
Published in Journal of luminescence (01-03-2014)“…The shape of the photoluminescence line excited at an edge face of InP wafer and registered from the broadside is used to investigate the intrinsic emission…”
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Correlation effects in sequential energy branching: An exactly solvable model of Fano statistics
Published in Physical review. E, Statistical, nonlinear, and soft matter physics (19-02-2010)Get full text
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Semiconductor scintillator based on photon recycling
Published in Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment (01-10-2011)“…Direct-bandgap semiconductor with high quantum radiative efficiency can operate as a scintillator despite being “opaque” to its own luminescence. An interband…”
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Photon assisted Lévy flights of minority carriers in n-InP
Published in Journal of luminescence (01-08-2012)“…We study the photoluminescence spectra of n-doped InP bulk wafers, both in the reflection and the transmission geometries relative to the excitation beam. From…”
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Effects of thermal treatment on radiative properties of HVPE grown InP layers
Published in Solid-state electronics (01-05-2014)“…•We studied radiative properties of 21μm thick InP layers grown by HVPE.•Radiative efficiency is comparable to best bulk InP virgin wafers.•Luminescence of…”
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High transconductance and large peak-to-valley ratio of negative differential conductance in three-terminal InGaAs/InAlAs real-space transfer devices
Published in Applied physics letters (10-12-1990)“…Three-terminal real-space transfer devices with improved room-temperature characteristics have been implemented in InGaAs/InAlAs/InGaAs heterostructures…”
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Rapid modulation of interband optical properties of quantum wells by intersubband absorption
Published in Applied physics letters (22-06-1992)“…Intersubband absorption of radiation by a two-dimensional electron gas can be used to control the electron temperature and effect a significant modulation of…”
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Low-Power Amplifier for Readout Interface of Semiconductor Scintillator
Published in IEEE transactions on nuclear science (01-08-2011)“…We present the design of a readout system, comprising a charge sensitive amplifier and a pulse shaper, that directly interfaces a semiconductor scintillator…”
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