Search Results - "LUO, G. L."

Competitiveness between direct and indirect radiative transitions of Ge by Cheng, T.-H., Ko, C.-Y., Chen, C.-Y., Peng, K.-L., Luo, G.-L., Liu, C. W., Tseng, H.-H.

“…Both direct and indirect transitions of photoluminescence and electroluminescence are observed in a Ge n + p diode. The relative intensity of direct radiative…”
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Changes and significance of serum sMICA levels in patients with recurrent miscarriage before and after lymphocyte infusion therapy by Wang, L P, Luo, G L, Liu, J, Xu, J X, Liu, K, Sun, F T, Zhou, Q L

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Genetic evidence for domestic raccoon dog rabies caused by Arctic-like rabies virus in Inner Mongolia, China by SHAO, X. Q., YAN, X. J., LUO, G. L., ZHANG, H. L., CHAI, X. L., WANG, F. X., WANG, J. K., ZHAO, J. J., WU, W., CHENG, S. P., YANG, F. H., QIN, X. C., ZHANG, Y. Z.

“…An outbreak of rabies affected domestic raccoon dogs on an animal farm in Inner Mongolia, China in 2007. A study was conducted to characterize the aetiological…”
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Sub-60 mV/dec Germanium Nanowire Field-Effect Transistors with 2-nm-thick Ferroelectric Hf0.5Zr0.5O2 by Lin, Y.-W., Yu, T.-Y., Su, C.-J., Chen, Y.-N., Chang, H.-H., Luo, G.-L., Wu, C.-T., Wu, W.-F., Lin, K.-L., Hou, F.-J., Wu, Y.-C., Yeh, W.-K.

“…We report an n-type Ge nanowire ferroelectric-Hf 0.5 Zr 0.5 O 2 field effect transistor (Ge NW FE-HZO FET) was experimentally demonstrated. An in-situ ALD O 3…”
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First Demonstration of Vertical Stacked Hetero-Oriented n-Ge (111)/p-Ge (100) CFET toward Mobility Balance Engineering by Yu, X.-R., Chang, W.-H, Hong, T.-C., Sung, P.-J., Agarwal, A., Luo, G.-L., Wu, C.-T., Kao, K.-H., Su, C.-J., Chang, S.-W., Lu, W.-H., Fu, P.-Y., Lin, J.-H., Wu, P.-H., Cho, T.-C., Ma, W. C.-Yu, Lu, D.-D., Chao, T.-S., Maeda, T., Lee, Y.-J., Wu, W.-F., Yeh, W.-K., Wang, Y.-H.

“…To solve the mobility balance issue in nanosheet FETs (NSFETs) and complementary FETs (CFETs), the aggressive approach using hetero-oriented integration with…”
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Ge FinFET CMOS Inverters With Improved Channel Surface Roughness by Using In-Situ ALD Digital O3 Treatment by Yeh, M.-S., Luo, G.-L., Hou, F.-J., Sung, P.-J., Wang, C. J., Su, C.-J., WU, C.-T., Huang, Y.-C., Hong, T.-C., Chen, B.-Y., Chen, K.-M., WU, Y.-C., Izawa, M., Miura, M., Morimoto, M., Ishimura, H., Lee, Y.-J., Wu, W.-F., Yeh, W.-K.

“…Improved electrical characteristics of CMOS inverters composed of Ge n- and p-finFETs were demonstrated by utilizing newly introduced Ge surface treatments…”
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Human BM stem cells initiate angiogenesis in human islets in vitro by Luo, J Z Q, Xiong, F, Al-Homsi, A S, Roy, T, Luo, L G

“…BM stem cells may have regenerative effects on islet function through angiogenesis. Human islets (100 islet equivalent/mL) were cultured alone (control) or…”
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Association of Cocaine- and Amphetamine-Regulated Transcript-Immunoreactive Elements with Thyrotropin-Releasing Hormone-Synthesizing Neurons in the Hypothalamic Paraventricular Nucleus and Its Role in the Regulation of the Hypothalamic-Pituitary-Thyroid Axis during Fasting by Fekete, Csaba, Mihaly, Emese, Luo, Lu-Guang, Kelly, Joseph, Clausen, Jes Thorn, Mao, QuanFu, Rand, William M, Moss, Larry Gene, Kuhar, Michael, Emerson, Charles H, Jackson, Ivor M. D, Lechan, Ronald M

“…Because cocaine- and amphetamine-regulated transcript (CART) coexists with alpha-melanocyte stimulating hormone (alpha-MSH) in the arcuate nucleus neurons and…”
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Long-term aging study on the solid-state reaction between 58Bi42Sn solder and Ni substrate by CHEN, C, HO, C. E, LIN, A. H, LUO, G. L, KAO, C. R

“…The reaction between Ni and eutectic BiSn solder at 85 degree C, 100 degree C, 120 degree C, and 135 degree C was studied. Reaction times ranging from 25 h to…”
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Estimation of the net energy and protein requirements for maintenance of male arctic foxes (Alopex lagopus) during the growth period12 by Zhong, W, Mu, L L, Han, F F, Luo, G L, Zhang, X Y, Liu, K Y, Guo, X L, Yang, H M, Li, G Y

“…Abstract The maintenance requirements of net energy and net protein were assumed to represent the most accurate and important values totally for the animal’s…”
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Expression of thyrotropin-releasing hormone receptor in immortalized beta-cell lines and rat pancreas by Luo, LG, Yano, N

“…Thyrotropin-releasing hormone (TRH), a hypothalamic tripeptide, is expressed in pancreatic islets at peak levels during the late gestation and early neonate…”
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Fabricating a n+-Ge contact with ultralow specific contact resistivity by introducing a PtGe alloy as a contact metal by Hsu, C. C., Chou, C. H., Wang, S. Y., Chi, W. C., Chien, C. H., Luo, G. L.

“…In this study, we developed an Ohmic contact structure to an in situ n+-Ge film that has an ultralow specific contact resistivity of [(6.8±2.1)×10−8 Ω⋅cm2]…”
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Integration Design and Process of 3-D Heterogeneous 6T SRAM with Double Layer Transferred Ge/2Si CFET and IGZO Pass Gates for 42% Reduced Cell Size by Yu, X.-R., Chuang, M.-H., Chang, S.-W., Chang, W.-H., Hong, T.-C., Chiang, C.-H., Lu, W.-H., Yang, C.-Y., Chen, W.-J., Lin, J.-H., Wu, P.-H., Sun, T.-C., Kola, S., Yang, Y.-S., Da, Yun, Sung, P.-J., Wu, C.-T., Cho, T.-C., Luo, G.-L., Kao, K.-H., Chiang, M.-H., Ma, W. C.-Y., Su, C.-J., Chao, T.-S., Maeda, T., Samukawa, S., Li, Y., Lee, Y.-J., Wu, W.-F., Tarng, J.-H., Wang, Y.-H.

“…In this work, we propose an advanced 3-D heterogeneous 6T SRAM with a newly designed hetero-integration method. CFET inverters and IGZO pass gates are…”
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1-GHz optical communication system using chaos in erbium-doped fiber lasers by Luo, L.G., Chu, P.L., Liu, H.F.

“…We experimentally demonstrated an optical communication system based on synchronized chaos between the transmitter and receiver with a sinusoidal signal of 1…”
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Erratum: “Fabricating a n+-Ge contact with ultralow specific contact resistivity by introducing a PtGe alloy as a contact metal” [Appl. Phys. Lett. 107 , 113503 (2015)] by Hsu, C. C., Chou, C. H., Wang, S. Y., Chi, W. C., Chien, C. H., Luo, G. L.

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FinFET Plus: A Scalable FinFET Architecture with 3D Air-Gap and Air-Spacer Toward the 3nm Generation and Beyond by Chiang, C. K., Pai, H., Lin, J. L., Chang, J. K., Lee, M. Y., Hsieh, E. R., Li, K. S., Luo, G. L., Cheng, Osbert, Chung, S. S.

“…A new improvement of FinFET has been demonstrated in the extension of the Moore's Law toward N3 technology and beyond. Instead of conventional STI, the…”
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Effect of nitroprusside (nitric oxide) on endogenous dopamine release from rat striatal slices by Zhu, X Z, Luo, L G

“…It is becoming apparent that the synthesis of nitric oxide (NO) from L-arginine not only explains endothelium-dependent vascular relaxation, but is a…”
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First Demonstration of Defect Elimination for Cryogenic Ge FinFET CMOS Inverter Showing Steep Subthreshold Slope by Using Ge-on-Insulator Structure by Yu, X.-R., Hsieh, C.-C., Chuang, M.-H., Chiu, M.-Y., Sun, T.-C., Geng, W.-Z., Chang, W.-H., Shih, Y.-J., Lu, W.-H., Chang, W.-C., Lin, Y.-C., Pai, Y.-C., Lai, C.-Y., Chuang, M.-H., Dei, Y., Yang, C.-Y., Lu, H.-Y., Lin, N.-C., Wu, C.-T., Kao, K.-H., Ma, W. C.-Y., Lu, D. D., Lee, Y.-J., Luo, G.-L., Chiang, M.-H., Maeda, T., Wu, W.-F., Li, Y.-M., Hou, T.-H.

“…This work presents experimental electrical characteristics and circuit prediction at cryogenic temperatures (down to 10 K) for three different kinds of…”
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Optimization of the growth of the InGaP etch-stop layer by MOVPE for InGaP/GaAs HBT device application by Hsieh, Y.C., Chang, E.Y., Yeh, S.S., Chang, C.W., Luo, G.L., Chang, C.Y., Lee, Ching-Ting

“…InGaP has high etching selectivity to GaAs. It can be used as the etch-stop layer to easily fabricate the InGaP/GaAs heterojunction bipolar transistors (HBTs)…”
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Nano-scaled Ge FinFETs with low temperature ferroelectric HfZrOx on specific interfacial layers exhibiting 65% S.S. reduction and improved ION by Su, C.-J, Tang, Y.-T, Tsou, Y.-C, Sung, P.-J, Hou, F.-J, Wang, C.-J, Chung, S.-T, Hsieh, C.-Y, Yeh, Y.-S, Hsueh, F.-K, Kao, K.-H, Chuang, S.-S, Wu, C.-T, You, T.-Y, Jian, Y.-L, Chou, T.-H, Shen, Y.-L, Chen, B.-Y, Luo, G.-L, Hong, T.-C, Huang, K.-P, Chen, M.-C, Lee, Y.-J, Chao, T.-S, Tseng, T.-Y, Wu, W.-F, Huang, G.-W, Shieh, J.-M, Yeh, W.-K, Wang, Y.-H

“…Ge n- and p-FinFETs with different interfacial layer ferroelectric HfZrO x (IL-FE-HZO) gate stacks have been demonstrated systematically by various annealing…”
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