Search Results - "LOO, Roger"

Germanium-on-silicon planar concave grating wavelength (de)multiplexers in the mid-infrared by Malik, Aditya, Muneeb, Muhammad, Shimura, Yosuke, Van Campenhout, Joris, Loo, Roger, Roelkens, Gunther

“…Mid-infrared wavelength (de)multiplexers based on planar concave gratings (PCGs) fabricated on a germanium-on-silicon waveguide platform are presented. PCGs…”
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Ge-on-Si and Ge-on-SOI thermo-optic phase shifters for the mid-infrared by Malik, Aditya, Dwivedi, Sarvagya, Van Landschoot, Liesbet, Muneeb, Muhammad, Shimura, Yosuke, Lepage, Guy, Van Campenhout, Joris, Vanherle, Wendy, Van Opstal, Tinneke, Loo, Roger, Roelkens, Gunther

“…Germanium-on-silicon thermo-optic phase shifters are demonstrated in the 5 μm wavelength range. Basic phase shifters require 700 mW of power for a 2π phase…”
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Site Selective Integration of III–V Materials on Si for Nanoscale Logic and Photonic Devices by Paladugu, Mohanchand, Merckling, Clement, Loo, Roger, Richard, Olivier, Bender, Hugo, Dekoster, Johan, Vandervorst, Wilfried, Caymax, Matty, Heyns, Marc

“…Integrating high electron mobility III–V materials on an existing Si based CMOS processing platform is considered as a main stepping stone to increase the CMOS…”
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Electrical properties of extended defects in strain relaxed GeSn by Gupta, Somya, Simoen, Eddy, Loo, Roger, Shimura, Yosuke, Porret, Clement, Gencarelli, Federica, Paredis, Kristof, Bender, Hugo, Lauwaert, Johan, Vrielinck, Henk, Heyns, Marc

“…We report the electrical properties of 60° dislocations originating from the +1.2% lattice mismatch between an unintentionally doped, 315 nm thick…”
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High 5.2 peak-to-valley current ratio in Si/SiGe resonant interband tunnel diodes grown by chemical vapor deposition by Ramesh, Anisha, Berger, Paul R., Loo, Roger

“…Si/SiGe resonant interband tunnel diodes were fabricated using chemical vapor deposition (CVD) on 200-mm diameter p-doped silicon wafers. The resonant…”
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Silicon-Based Photonic Integration Beyond the Telecommunication Wavelength Range by Roelkens, Gunther, Dave, Utsav, Gassenq, Alban, Hattasan, Nannicha, Chen Hu, Kuyken, Bart, Leo, Francois, Malik, Aditya, Muneeb, Muhammad, Ryckeboer, Eva, Sanchez, Dorian, Uvin, Sarah, Wang, Ruijun, Hens, Zeger, Baets, Roel, Shimura, Yosuke, Gencarelli, Federica, Vincent, Benjamin, Loo, Roger, Van Campenhout, Joris, Cerutti, Laurent, Rodriguez, Jean-Baptiste, Tournie, Eric, Xia Chen, Nedeljkovic, Milos, Mashanovich, Goran, Li Shen, Healy, Noel, Peacock, Anna C., Xiaoping Liu, Osgood, Richard, Green, William M. J.

“…In this paper we discuss silicon-based photonic integrated circuit technology for applications beyond the telecommunication wavelength range…”
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Enhanced active P doping by using high order Ge precursors leading to intense photoluminescence by Shimura, Yosuke, Srinivasan, Srinivasan Ashwyn, Van Thourhout, Dries, Van Deun, Rik, Pantouvaki, Marianna, Van Campenhout, Joris, Loo, Roger

“…The impact of the growth temperature on the in-situ phosphorus doped Ge layer grown by chemical vapor deposition is studied to achieve a sufficiently high…”
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Fabrication, Characterization, and Analysis of Ge/GeSn Heterojunction p-Type Tunnel Transistors by Schulte-Braucks, Christian, Pandey, Rahul, Sajjad, Redwan Noor, Barth, Mike, Ghosh, Ram Krishna, Grisafe, Ben, Sharma, Pankaj, von den Driesch, Nils, Vohra, Anurag, Rayner, Gilbert Bruce, Loo, Roger, Mantl, Siegfried, Buca, Dan, Chih-Chieh Yeh, Cheng-Hsien Wu, Tsai, Wilman, Antoniadis, Dimitri A., Datta, Suman

“…We present a detailed study on fabrication and characterization of Ge/GeSn heterojunction p-type tunnel-field-effect-transistors (TFETs). Critical process…”
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Density and Capture Cross-Section of Interface Traps in GeSnO2 and GeO2 Grown on Heteroepitaxial GeSn by Gupta, Somya, Simoen, Eddy, Loo, Roger, Madia, Oreste, Lin, Dennis, Merckling, Clement, Shimura, Yosuke, Conard, Thierry, Lauwaert, Johan, Vrielinck, Henk, Heyns, Marc

“…An imperative factor in adapting GeSn as the channel material in CMOS technology, is the gate-oxide stack. The performance of GeSn transistors is degraded due…”
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Chemical vapor deposition of Si:C and Si:C:P films—Evaluation of material quality as a function of C content, carrier gas and doping by Dhayalan, Sathish Kumar, Loo, Roger, Hikavyy, Andriy, Rosseel, Erik, Bender, Hugo, Richard, Olivier, Vandervorst, Wilfried

“…Incorporation of source–drain stressors (S/D) for FinFETs to boost the channel mobility is a promising scaling approach. Typically SiGe:B S/D stressors are…”
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Influence of precursor gas on SiGe epitaxial material quality in terms of structural and electrical defects by Ike, Shinichi, Simoen, Eddy, Shimura, Yosuke, Hikavyy, Andriy, Vandervorst, Wilfried, Loo, Roger, Takeuchi, Wakana, Nakatsuka, Osamu, Zaima, Shigeaki

“…We have investigated the structural and electrical properties of n-type doped Si1−xGex epitaxial layers (x = 24-26%) grown by chemical vapor deposition with…”
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Optimized design of Si-cap layer in strained-SiGe channel p-MOSFETs based on computational and experimental approaches by Sato-Iwanaga, Junko, Inoue, Akira, Sorada, Haruyuki, Takagi, Takeshi, Rothschild, Aude, Loo, Roger, Biesemans, Serge, Ito, Choshu, Liu, Yang, Dutton, Robert W., Tsuchiya, Hideaki

“…•Strainde-SiGe channel p-MOSFETs with a Si-cap layer are studied.•The roles of Si-cap layer are clarified by using simulation and experiment.•2D hole…”
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The implant-free quantum well field-effect transistor: Harnessing the power of heterostructures by Hellings, Geert, Hikavyy, Andriy, Mitard, Jerome, Witters, Liesbeth, Benbakhti, Brahim, Alian, AliReza, Waldron, Niamh, Bender, Hugo, Eneman, Geert, Krom, Raymond, Schulze, Andreas, Vandervorst, Wilfried, Loo, Roger, Heyns, Marc, Meuris, Marc, Hoffmann, Thomas, De Meyer, Kristin

“…The Implant-Free Quantum Well Field-Effect Transistor (FET) offers enhanced scalability in a planar architecture through the integration of heterostructures…”
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Fabrication and Analysis of a / Heterojunction Line Tunnel FET by Walke, Amey M., Vandooren, Anne, Rooyackers, Rita, Leonelli, Daniele, Hikavyy, Andriy, Loo, Roger, Verhulst, Anne S., Kuo-Hsing Kao, Huyghebaert, Cedric, Groeseneken, Guido, Rao, Valipe Ramgopal, Bhuwalka, Krishna K., Heyns, Marc M., Collaert, Nadine, Thean, Aaron Voon-Yew

“…This paper presents a new integration scheme to fabricate a Si/Si 0.55 Ge 0.45 heterojunction line tunnel field effect transistor (TFET). The device shows an…”
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Influence of dislocations in strained Si∕relaxed SiGe layers on n+∕p-junctions in a metal-oxide-semiconductor field-effect transistor technology by Eneman, Geert, Simoen, Eddy, Delhougne, Romain, Verheyen, Peter, Loo, Roger, De Meyer, Kristin

“…We present an investigation of junction leakage in highly doped n+∕p-junctions, fabricated in strained silicon/relaxed SiGe substrates. The leakage is shown to…”
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Si1-yGey or Ge1-zSnz Source/Drain Stressors on Strained Si1-xGex-Channel P-Type Field-Effect Transistors: A Technology Computer-Aided Design Study by Eneman, Geert, De Keersgieter, An, Witters, Liesbeth, Mitard, Jerome, Vincent, Benjamin, Hikavyy, Andriy, Loo, Roger, Horiguchi, Naoto, Collaert, Nadine, Thean, Aaron

“…The interaction between two stress techniques, strain-relaxed buffers (SRBs) and epitaxial source/drain stressors, is studied on short, Si 1-x Ge x - and…”
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Layout Scaling of \hbox\hbox \hbox pFETs by Eneman, G., Yamaguchi, S., Ortolland, C., Takeoka, S., Kobayashi, M., Witters, L., Hikavyy, A., Mitard, J., Loo, R., Hoffmann, T.

“…Through a combination of electrical measurements, technology computer-aided design simulations, and wafer bending experiments, the effect of elastic stress…”
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Effects of Strain on Diborane Dissociative Adsorption and Boron Incorporation on Si 0.5 Ge 0.5 (001)-2 × 1 Surfaces by Rengo, Gianluca, Pourtois, Geoffrey, Porret, Clement, Loo, Roger, Vantomme, André

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Effects of Strain on Diborane Dissociative Adsorption and Boron Incorporation on Si0.5Ge0.5(001)‑2 × 1 Surfaces by Rengo, Gianluca, Pourtois, Geoffrey, Porret, Clement, Loo, Roger, Vantomme, André

“…This study investigates the surface reaction pathway of the diborane dissociative adsorption on the Si0.5Ge0.5(001)-2 × 1 surface by using density functional…”
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Germanium-on-Silicon Mid-Infrared Arrayed Waveguide Grating Multiplexers by Malik, Aditya, Muneeb, Muhammad, Pathak, Shibnath, Shimura, Yosuke, Van Campenhout, Joris, Loo, Roger, Roelkens, Gunther

“…In this letter, we describe the use of a germanium-on-silicon waveguide platform to realize an arrayed waveguide grating (AWG) operating in the 5 μm wavelength…”
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