Search Results - "LOHE, Ch"

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  1. 1
    The role of the HfO2―TiN interface in capacitance―voltage nonlinearity of Metal-Insulator-Metal capacitors

    The role of the HfO2―TiN interface in capacitance―voltage nonlinearity of Metal-Insulator-Metal capacitors by WENGER, Ch, LUKOSIUS, M, WEIDNER, G, MÜSSIG, H.-J, PASKO, S, LOHE, Ch

    Published in Thin solid films (01-10-2009)
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  2. 2
    The role of the HfO(2)-TiN interface in capacitance-voltage nonlinearity of Metal-Insulator-Metal capacitors

    The role of the HfO(2)-TiN interface in capacitance-voltage nonlinearity of Metal-Insulator-Metal capacitors by Wenger, Ch, Lukosius, M, Weidner, G, Mussig, H J, Pasko, S, Lohe, Ch

    Published in Thin solid films (01-10-2009)
    “…The high-k Metal-Insulator-Metal (MIM) capacitor Back-End-of-Line (BEOL) integration into mixed signal and Radio Frequency (RF) circuits is characterized by…”
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  3. 3
    The role of the HfO 2–TiN interface in capacitance–voltage nonlinearity of Metal-Insulator-Metal capacitors

    The role of the HfO 2–TiN interface in capacitance–voltage nonlinearity of Metal-Insulator-Metal capacitors by Wenger, Ch, Lukosius, M., Weidner, G., Müssig, H.-J., Pasko, S., Lohe, Ch

    Published in Thin solid films (2009)
    “…The high-k Metal-Insulator-Metal (MIM) capacitor Back-End-of-Line (BEOL) integration into mixed signal and Radio Frequency (RF) circuits is characterized by…”
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    Journal Article
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  4. 4
    Investigation of atomic vapour deposited TiN/HfO2/SiO2 gate stacks for MOSFET devices

    Investigation of atomic vapour deposited TiN/HfO2/SiO2 gate stacks for MOSFET devices by WENGER, Ch, LUKOSIUS, M, COSTINA, I, SORGE, R, DABROWSKI, J, MÜSSIG, H.-J, PASKO, S, LOHE, Ch

    Published in Microelectronic engineering (01-08-2008)
    “…HfO2 films were grown by atomic vapour deposition (AVD) on SiO2/Si (1 0 0) substrates. The positive shift of the flat band voltage of the HfO2 based…”
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  5. 5
    Investigation of atomic vapour deposited TiN/HfO 2/SiO 2 gate stacks for MOSFET devices

    Investigation of atomic vapour deposited TiN/HfO 2/SiO 2 gate stacks for MOSFET devices by Wenger, Ch, Lukosius, M., Costina, I., Sorge, R., Dabrowski, J., Müssig, H.-J., Pasko, S., Lohe, Ch

    Published in Microelectronic engineering (2008)
    “…HfO 2 films were grown by atomic vapour deposition (AVD) on SiO 2/Si (1 0 0) substrates. The positive shift of the flat band voltage of the HfO 2 based…”
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  6. 6
    Atomic -vapour -deposited HfO2 and Sr4Ta2O9 layers for metal-insulator-metal applications

    Atomic -vapour -deposited HfO2 and Sr4Ta2O9 layers for metal-insulator-metal applications by LUKOSIUS, M, WENGER, Ch, SCHROEDER, T, DABROWSKI, J, SORGE, R, COSTINA, I, MÜSSIG, H.-J, PASKO, S, LOHE, Ch

    Published in Microelectronic engineering (01-09-2007)
    “…Sr4Ta2O9 and HfO2 films were prepared on 200 mm TiN/Si(100) substrates by Atomic Vapour Deposition (AVD). Depositions were carried out within a thermal budget…”
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  7. 7
    Atomic - vapour - deposited HfO 2 and Sr 4Ta 2O 9 layers for metal-insulator-metal applications

    Atomic - vapour - deposited HfO 2 and Sr 4Ta 2O 9 layers for metal-insulator-metal applications by Lukosius, M., Wenger, Ch, Schroeder, T., Dabrowski, J., Sorge, R., Costina, I., Müssig, H.-J., Pasko, S., Lohe, Ch

    Published in Microelectronic engineering (2007)
    “…Sr 4Ta 2O 9 and HfO 2 films were prepared on 200 mm TiN/Si(100) substrates by Atomic Vapour Deposition (AVD). Depositions were carried out within a thermal…”
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