Search Results - "LITTON, C. W"

Characterization of homoepitaxial p -type ZnO grown by molecular beam epitaxy by Look, D. C., Reynolds, D. C., Litton, C. W., Jones, R. L., Eason, D. B., Cantwell, G.

“…An N-doped, p-type ZnO layer has been grown by molecular beam epitaxy on an Li-diffused, bulk, semi-insulating ZnO substrate. Hall-effect and conductivity…”
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Role of near-surface states in ohmic-Schottky conversion of Au contacts to ZnO by Mosbacker, H. L., Strzhemechny, Y. M., White, B. D., Smith, P. E., Look, D. C., Reynolds, D. C., Litton, C. W., Brillson, L. J.

“…A conversion from ohmic to rectifying behavior is observed for Au contacts on atomically ordered polar ZnO surfaces following remote, room-temperature oxygen…”
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Electrical properties of bulk ZnO by Look, D.C., Reynolds, D.C., Sizelove, J.R., Jones, R.L., Litton, C.W., Cantwell, G., Harsch, W.C.

“…Large-diameter (2-inch), n-type ZnO boules grown by a new vapor-phase transport method were investigated by the temperature-dependent Hall-effect technique…”
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Optical properties of GaN grown on ZnO by reactive molecular beam epitaxy by Hamdani, F., Botchkarev, A., Kim, W., Morkoç, H., Yeadon, M., Gibson, J. M., Tsen, S.-C. Y., Smith, David J., Reynolds, D. C., Look, D. C., Evans, K., Litton, C. W., Mitchel, W. C., Hemenger, P.

“…High quality wurtzite GaN epilayers have been grown on ZnO(0001) substrates by reactive molecular beam epitaxy. Photoluminescence and reflectivity measurements…”
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Optical properties of ZnO crystals containing internal strains by Reynolds, D.C, Look, D.C, Jogai, B, Jones, R.L, Litton, C.W, Harsch, W, Cantwell, G

“…The way in which in-grown strain impacts the optical properties of crystals can be revealed when combined with annealing studies. During the annealing process…”
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Growth of InSb and InAs1-xSbx on GaAs by molecular beam epitaxy by CHYI, J.-I, KALEM, S, KUMAR, N. S, LITTON, C. W, MORKOC, H

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Determination of defect pair orientation in ZnO by REYNOLDS, D. C, LOOK, D. C, JOGAI, B, LITTON, C. W, CANTWELL, G, HARSCH, W. C

“…The orientation of defect pairs with respect to the crystallographic axes was determined in ZnO. In a specific orientation of the strain with respect to the c…”
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Effect of C ∕ Si ratio on deep levels in epitaxial 4H-SiC by Litton, C. W., Johnstone, D., Akarca-Biyikli, S., Ramaiah, K. S., Bhat, I., Chow, T. P., Kim, J. K., Schubert, E. F.

“…Changing the ratio of carbon to silicon during the epitaxial 4H-SiC growth is expected to alter the dominant deep level trap, which has been attributed to a…”
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Electrical properties of InAs epilayers grown by molecular beam epitaxy on Si substrates by KALEM, S, CHYI, J, LITTON, C. W, MORKOC, H

“…InAs epitaxial films have been grown by molecular beam epitaxy on high-resistivity Si (20 Ω cm) substrates for the first time, and transport properties were…”
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Direct evidence for the site of substitutional carbon impurity in GaAs by Theis, W. M., Bajaj, K. K., Litton, C. W., Spitzer, W. G.

“…Direct evidence that substitutional carbon in GaAs is predominantly on the As sublattice is obtained from Fourier transform infrared spectroscopy absorption…”
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A high-gain GaAs/AlGaAs n-p-n heterojunction bipolar transistor on (100) Si grown by molecular beam epitaxy by WON, T, LITTON, C. W, MORKOC, H, YARIV, A

“…High-gain GaAs/AlGaAs n-p-n heterojunction bipolar transistors (HBTs) on Si substrates grown by molecular-beam epitaxy (MBE) have been fabricated and tested…”
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Hybrid II-VI and III-V Compound Double Heterostructures and Their Properties by Alivov, Y.I., Özgür, Ü., Gu, X., Liu, C., Moon, Y., Morkoç, H., Lopatiuk, O., Chernyak, L., Litton, C. W.

“…In this report, n-GaN/n-ZnO/p-GaN double heterostructures (DHs) were grown on sapphire substrate employing metal-organic chemical vapor deposition (MOCVD) and…”
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Observation of donor-acceptor pair spectra in the photoluminescence of H- and Zn-implanted ZnO single crystals by Reynolds, D. C., Litton, C. W., Collins, T. C., Hoelscher, J. E., Nause, J.

“…Donor-acceptor (D-A) pair spectra have been observed in the photoluminescence radiative recombination of selected donor bound exciton complexes in zinc oxide…”
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A high-performance InGaAs/InAlAs double-heterojunction bipolar transistor with nonalloyed n+-InAs cap layer on InP(n) grown by molecular beam epitaxy by PENG, C. K, WON, T, LITTON, C. W, MORKOC, H

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Determination of interfacial quality of GaAs-GaAlAs multi-quantum well structures using photoluminescence spectroscopy by REYNOLDS, D. C, BAJAJ, K. K, LITTON, C. W, YU, P. W, SINGH, J, MASSELINK, W. T, FISCHER, R, MORKOC, H

“…Well size fluctuations have been observed in high quality GaAs-Ga0.75Al0.25As multi-quantum well structures having very sharp photoluminescence transitions…”
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Comparison of OMVPE and MBE grown AlGaAs/InGaAs PHEMT structures by LAREAU, R. T, JONES, K. A, MONAHAN, T, FLEMISH, J. R, PFEFFER, R. L, SHERRIFF, R. E, LITTON, C. W, JONES, R, STUTZ, C. E, LOOK, D. C

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Excitonic photoluminescence linewidths in AlGaAs grown by molecular beam epitaxy by REYNOLDS, D. C, BAJAJ, K. K, LITTON, C. W, YU, P. W, KLEM, J, PENG, C. K, MORKOC, H, SINGH, J

“…The linewidths of excitonic transitions were measured in AlxGa1−xAs, grown by molecular beam epitaxy as a function of alloy composition x for values of x≲0.43…”
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Investigation of Defects and Polarity in GaN Using Hot Wet Etching, Atomic Force and Transmission Electron Microscopy and Convergent Beam Electron Diffraction by Visconti, P., Huang, D., Reshchikov, M.A., Yun, F., King, T., Baski, A.A., Cingolani, R., Litton, C.W., Jasinski, J., Liliental-Weber, Z., Morkoç, H.

“…Availability of reliable and quick methods to investigate defects and polarity in GaN films is of great interest. We have used photo‐electrochemical (PEC) and…”
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Comparison of OMVPE grown GaAs/AlGaAs and GaAs/InGaP HEMT and PHEMT structures by JONES, K. A, LAREAU, R. T, NONAHAN, T, FLEMISH, J. R, PFEFFER, R. L, SHERRIFF, R. E, LITTON, C. W, JONES, R. L, STUTZ, C. E, LOOK, D. C

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A Comparative Study of MBE-Grown GaN Films Having Predominantly Ga- or N-Polarity by Yun, F., Huang, D., Reshchikov, M.A., King, T., Baski, A.A., Litton, C.W., Jasinski, J., Liliental-Weber, Z., Visconti, P., Morkoç, H.

“…Wurtzitic GaN epilayers having both Ga and N‐polarity were grown by reactive molecular beam epitaxy (MBE) using a plasma‐activated nitrogen source on c‐plane…”
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