Search Results - "LINDNER, J. K. N"

Synthesis of nanocrystalline low temperature silica polymorphs by Schäf, O., Ghobarkar, H., Garnier, A., Vagner, C., Lindner, J.K.N., Hanss, J., Reller, A.

“…Colloidal silica (Dupont, Ludox 40) has been hydrothermally treated at temperatures between 125 and 220 °C at 100 MPa water pressure for 5 to 90 days. Final…”
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Quantitative analysis of thin film compositions using EFTEM combined with RBS and ERDA by Lindner, J.K.N., Häberlen, M., Schwarz, F., Thorwarth, G., Hammerl, C., Assmann, W., Stritzker, B.

“…Analytical electron microscopy today is an emerging technique allowing for the composition analysis of solids with high spatial resolution down to 1 nm or…”
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Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar + implanted 3C-SiC (001) by Tschumak, E., Granzner, R., Lindner, J. K. N., Schwierz, F., Lischka, K., Nagasawa, H., Abe, M., As, D. J.

“…A heterojunction field-effect transistor (HFET) was fabricated of nonpolar cubic AlGaN/GaN grown on Ar + implanted 3C-SiC (001) by molecular beam epitaxy. The…”
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Growth of cubic GaN on 3C–SiC/Si (001) nanostructures by Kemper, R.M., Hiller, L., Stauden, T., Pezoldt, J., Duschik, K., Niendorf, T., Maier, H.J., Meertens, D., Tillmann, K., As, D.J., Lindner, J.K.N.

“…We report on the molecular beam epitaxy growth of cubic GaN on 3C–SiC (001) nanostructures. Transmission electron microscopy (TEM) studies show phase-pure…”
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XTEM characterization of tungsten implanted SiC thin films on silicon for field emission devices by Lindner, J.K.N., Tsang, W.M., Wong, S.P., Xu, J.B., Wilson, I.H.

“…Nanocrystalline surface layers of WC and SiC are formed by a sequential high-dose metal vapour vacuum arc implantation of carbon and tungsten ions into Si(1 0…”
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Photoluminescence properties of Sm2+-doped BaBr2 under hydrostatic pressure by WIEGAND, M.-C, SIEVERS, W, LINDNER, J. K. N, TRÖSTER, Th, SCHWEIZER, S

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Marker experiments to determine diffusing species and diffusion path in medical Nitinol alloys by Lutz, J., Lindner, J.K.N., Mändl, S.

“…The out-diffusion of toxic Ni ions from NiTi (Nitinol), often used for biomedical applications, can be strongly reduced using oxygen plasma immersion ion…”
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Growth of cubic GaN on nano-patterned 3C-SiC/Si (001) substrates by Kemper, R.M., Weinl, M., Mietze, C., Häberlen, M., Schupp, T., Tschumak, E., Lindner, J.K.N., Lischka, K., As, D.J.

“…Non-polar relaxed cubic GaN was grown by molecular beam epitaxy (MBE) on nano-patterned 3C-SiC/Si (001) substrates with negligible hexagonal content and less…”
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Diamond nucleation on iridium buffer layers and subsequent textured growth: A route for the realization of single-crystal diamond films by Schreck, M., Hörmann, F., Roll, H., Lindner, J. K. N., Stritzker, B.

“…It is shown that diamond nucleation on iridium buffer layers followed by an appropriate textured-growth step offers a viable way to realize single-crystal…”
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Structural characterization of cubic and hexagonal GaN thin films grown by IBA–MBE on SiC/Si by Häberlen, M., Gerlach, J.W., Murphy, B., Lindner, J.K.N., Stritzker, B.

“…Buried ion beam synthesized 3C-SiC layers were revealed to the surface of silicon wafers to provide lattice matched substrates for GaN thin film epitaxy. Both…”
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Strain-driven InAs island growth on top of GaAs(111) nanopillars by Riedl, T, Kunnathully, V. S, Trapp, A, Langer, T, Reuter, D, Lindner, J. K. N

“…Phys. Rev. Materials 4, 014602 (2020) We analyze the shape and position of heteroepitaxial InAs islands on the top face of cylindrical GaAs(111)A nanopillars…”
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InAs Heteroepitaxy on Nanopillar-Patterned GaAs (111)A by Kunnathully, V. S, Riedl, T, Trapp, A, Langer, T, Reuter, D, Lindner, J. K. N

“…Heteroepitaxy on nanopatterned substrates is a means of defect reduction at semiconductor heterointerfaces by exploiting substrate compliance and enhanced…”
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Investigation of the nucleation and growth of SiC nanostructures on Si by Scharmann, F., Maslarski, P., Attenberger, W., Lindner, J.K.N., Stritzker, B., Stauden, Th, Pezoldt, J.

“…Using in situ reflection high energy electron diffraction (RHEED), ex situ atomic force microscopy (AFM) and transmission electron microscopy (TEM) the early…”
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Combined ab initio and classical potential simulation study on silicon carbide precipitation in silicon by Zirkelbach, F., Stritzker, B., Nordlund, K., Lindner, J. K. N., Schmidt, W. G., Rauls, E.

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Biomimetic approaches to create anti-reflection glass surfaces for solar cells using self-organizing techniques by Achtelik, J., Sievers, W., Lindner, J.K.N.

“…[Display omitted] ► Nanostructured glass surfaces with theoretically near-to-zero reflectivity in the UVNIR region. ► Simple fabrication process using…”
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Ion beam induced sintering of colloidal polystyrene nano-masks by Kraus, D., Lindner, J.K.N., Stritzker, B.

“…Nano-masks of polystyrene formed by self-organized arrangement of colloidal nano-spheres in a hexagonally close-packed monolayer on Si(100) surfaces were…”
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Relaxation of a strained 3C-SiC(1 1 1) thin film on silicon by He + and O + ion beam defect engineering by Häberlen, M., Murphy, B., Stritzker, B., Lindner, J.K.N.

“…In this paper we report on the successful reduction of tensile strain in a thin strained ion-beam synthesized 3C-SiC(1 1 1) layer on silicon. The creation of a…”
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Regular surface patterns by local swelling induced by He implantation into silicon through nanosphere lithography masks by Lindner, J.K.N., Seider, C., Fischer, F., Weinl, M., Stritzker, B.

“…Nanopatterning of silicon surfaces by means of He+ ion implantation through self-organized colloidal masks is reported for the first time. Nanosphere…”
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Determination of diffusing species from marker experiments in the system Ni–Ti–O by Schirmer, S., Lindner, J.K.N., Mändl, S.

“…Surface modification of NiTi for improved biocompatibility is a pressing issue. Using oxygen plasma immersion ion implantation (PIII), it is possible to form…”
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High-dose carbon implantations into silicon: fundamental studies for new technological tricks by Lindner, J K N

“…Depending on the implantation temperature, the implantation of carbon ions into silicon at high doses results in the formation of either amorphous SiCx or…”
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