Search Results - "LIND, Erik"

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  1. 1

    Individual Defects in InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors Operating below 60 mV/decade by Memisevic, Elvedin, Hellenbrand, Markus, Lind, Erik, Persson, Axel R, Sant, Saurabh, Schenk, Andreas, Svensson, Johannes, Wallenberg, Reine, Wernersson, Lars-Erik

    Published in Nano letters (12-07-2017)
    “…Tunneling field-effect transistors (TunnelFET), a leading steep-slope transistor candidate, is still plagued by defect response, and there is a large…”
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  2. 2

    Scaling of Vertical InAs-GaSb Nanowire Tunneling Field-Effect Transistors on Si by Memisevic, Elvedin, Svensson, Johannes, Hellenbrand, Markus, Lind, Erik, Wernersson, Lars-Erik

    Published in IEEE electron device letters (01-05-2016)
    “…We demonstrate improved performance due to enhanced electrostatic control achieved by diameter scaling and gate placement in vertical InAs-GaSb tunneling…”
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  3. 3

    High-Frequency Gate-All-Around Vertical InAs Nanowire MOSFETs on Si Substrates by Johansson, Sofia, Memisevic, Elvedin, Wernersson, Lars-Erik, Lind, Erik

    Published in IEEE electron device letters (01-05-2014)
    “…We demonstrate a vertical InAs nanowire MOSFET integrated on Si substrate with an extrinsic peak cut-off frequency of 103 GHz and a maximum oscillation…”
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  4. 4

    A High-Frequency Transconductance Method for Characterization of High- \kappa Border Traps in III-V MOSFETs by Johansson, S., Berg, M., Persson, Karl-Magnus, Lind, E.

    Published in IEEE transactions on electron devices (01-02-2013)
    “…A novel method that reveals the spatial distribution of border traps in III-V metal-oxide-semiconductor field-effect transistors (MOSFETs) is presented. The…”
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  5. 5

    Radio-Frequency Characterization of Selectively Regrown InGaAs Lateral Nanowire MOSFETs by Zota, Cezar B., Roll, Guntrade, Wernersson, Lars-Erik, Lind, Erik

    Published in IEEE transactions on electron devices (01-12-2014)
    “…We demonstrate InGaAs multigate MOSFETs, so-called FinFETs. The lateral nanowires constituting the channel in these devices have been formed using selective…”
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  6. 6

    Vertical InAs/InGaAs Heterostructure Metal–Oxide–Semiconductor Field-Effect Transistors on Si by Kilpi, Olli-Pekka, Svensson, Johannes, Wu, Jun, Persson, Axel R, Wallenberg, Reine, Lind, Erik, Wernersson, Lars-Erik

    Published in Nano letters (11-10-2017)
    “…III–V compound semiconductors offer a path to continue Moore’s law due to their excellent electron transport properties. One major challenge, integrating…”
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  7. 7

    Combining Axial and Radial Nanowire Heterostructures: Radial Esaki Diodes and Tunnel Field-Effect Transistors by Dey, Anil W, Svensson, Johannes, Ek, Martin, Lind, Erik, Thelander, Claes, Wernersson, Lars-Erik

    Published in Nano letters (11-12-2013)
    “…The ever-growing demand on high-performance electronics has generated transistors with very impressive figures of merit (Radosavljevic et al., IEEE Int…”
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  8. 8

    Quantized Conduction and High Mobility in Selectively Grown InxGa1-xAs Nanowires by Zota, Cezar, Lindgren, David, Wernersson, Lars-Erik, Lind, Erik

    Published in ACS nano (27-10-2015)
    “…We report measured quantized conductance and quasi-ballistic transport in selectively regrown In0.85Ga0.15As nanowires. Very low parasitic resistances obtained…”
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  9. 9

    High-Current GaSb/InAs(Sb) Nanowire Tunnel Field-Effect Transistors by Dey, A. W., Borg, B. M., Ganjipour, B., Ek, M., Dick, K. A., Lind, E., Thelander, C., Wernersson, L.

    Published in IEEE electron device letters (01-02-2013)
    “…We present electrical characterization of GaSb/InAs(Sb) nanowire tunnel field-effect transistors. The broken band alignment of the GaSb/InAs(Sb)…”
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  10. 10

    Artificial nanophotonic neuron with internal memory for biologically inspired and reservoir network computing by Winge, David, Borgström, Magnus, Lind, Erik, Mikkelsen, Anders

    Published in Neuromorphic computing and engineering (01-09-2023)
    “…Abstract Neurons with internal memory have been proposed for biological and bio-inspired neural networks, adding important functionality. We introduce an…”
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  11. 11

    Improved Subthreshold Slope in an InAs Nanowire Heterostructure Field-Effect Transistor by Lind, Erik, Persson, Ann I, Samuelson, Lars, Wernersson, Lars-Erik

    Published in Nano letters (01-09-2006)
    “…An n-type InAs/InAsP heterostructure nanowire field-effect transistor has been fabricated and compared with a homogeneous InAs field-effect transistor. For the…”
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  12. 12

    III-V Heterostructure Nanowire Tunnel FETs by Lind, Erik, Memisevic, Elvedin, Dey, Anil W., Wernersson, Lars-Erik

    “…In this paper, InAs/GaSb nanowire tunnel field-effect transistors (TFETs) are studied theoretically and experimentally. A 2-band 1-D analytic tunneling model…”
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  13. 13

    How green is an urban tree? The impact of species selection in reducing the carbon footprint of park trees in Swedish cities by Lind, Erik, Prade, Thomas, Sjöman Deak, Johanna, Levinsson, Anna, Sjöman, Henrik

    Published in Frontiers in sustainable cities (12-06-2023)
    “…Introduction Planting trees in urban areas can mitigate some of the emissions generated in cities by carbon sequestration (annual uptake of CO 2 through the…”
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  14. 14

    Electrical Properties of Vertical InAs/InGaAs Heterostructure MOSFETs by Kilpi, Olli-Pekka, Svensson, Johannes, Lind, Erik, Wernersson, Lars-Erik

    “…Vertical InAs/InGaAs nanowire MOSFETs are fabricated in a gate-last fabrication process, which allows gate-lengths down to 25 nm and accurate gate-alignment…”
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  15. 15

    Extrinsic and Intrinsic Performance of Vertical InAs Nanowire MOSFETs on Si Substrates by Persson, Karl-Magnus, Berg, Martin, Borg, Mattias B., Jun Wu, Johansson, Sofia, Svensson, Johannes, Jansson, Kristofer, Lind, Erik, Wernersson, Lars-Erik

    Published in IEEE transactions on electron devices (01-09-2013)
    “…This paper presents dc and RF characterization as well as modeling of vertical InAs nanowire (NW) MOSFETs with L G =200 nm and Al 2 O 3 /HfO 2 high-κ…”
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  16. 16

    Electrical Characterization and Modeling of Gate-Last Vertical InAs Nanowire MOSFETs on Si by Berg, Martin, Kilpi, Olli-Pekka, Persson, Karl-Magnus, Svensson, Johannes, Hellenbrand, Markus, Lind, Erik, Wernersson, Lars-Erik

    Published in IEEE electron device letters (01-08-2016)
    “…Vertical InAs nanowire transistors are fabricated on Si using a gate-last method, allowing for lithography-based control of the vertical gate length. The best…”
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  17. 17

    Temperature dependent properties of InSb and InAs nanowire field-effect transistors by Nilsson, Henrik A., Caroff, Philippe, Thelander, Claes, Lind, Erik, Karlström, Olov, Wernersson, Lars-Erik

    Published in Applied physics letters (12-04-2010)
    “…We present temperature dependent electrical measurements on InSb and InAs nanowire field-effect transistors (FETs). The FETs are fabricated from InAs/InSb…”
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  18. 18

    Relationships among Actual Motor Competence, Perceived Motor Competence, and Health-Related Fitness in College-Aged Males by Moss, Samantha, Lind, Erik, Ferkel, Rick, McGinnis, Peter, True, Larissa

    Published in Sports (Basel) (02-12-2020)
    “…Actual motor competence (MC), perceived motor competence (PMC), and health-related fitness (HRF) exhibit a dynamic and reciprocal relationship in child…”
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  19. 19

    Accumulation capacitance of narrow band gap metal-oxide-semiconductor capacitors by Lind, Erik, Niquet, Yann-Michel, Mera, Hector, Wernersson, Lars-Erik

    Published in Applied physics letters (07-06-2010)
    “…We have investigated the accumulation capacitance-voltage characteristics for capacitors with narrow band gap materials using modeling and experiments. The…”
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  20. 20

    RF and DC Analysis of Stressed InGaAs MOSFETs by Roll, Guntrade, Lind, Erik, Egard, Mikael, Johansson, Sofia, Ohlsson, Lars, Wernersson, Lars-Erik

    Published in IEEE electron device letters (01-02-2014)
    “…A complete reliability study of the DC and RF characteristics for InGaAs nMOSFETs with Al 2 O 3 /HfO 2 dielectric is presented. The main stress variation at…”
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