Search Results - "LIND, Erik"
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Individual Defects in InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors Operating below 60 mV/decade
Published in Nano letters (12-07-2017)“…Tunneling field-effect transistors (TunnelFET), a leading steep-slope transistor candidate, is still plagued by defect response, and there is a large…”
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Scaling of Vertical InAs-GaSb Nanowire Tunneling Field-Effect Transistors on Si
Published in IEEE electron device letters (01-05-2016)“…We demonstrate improved performance due to enhanced electrostatic control achieved by diameter scaling and gate placement in vertical InAs-GaSb tunneling…”
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High-Frequency Gate-All-Around Vertical InAs Nanowire MOSFETs on Si Substrates
Published in IEEE electron device letters (01-05-2014)“…We demonstrate a vertical InAs nanowire MOSFET integrated on Si substrate with an extrinsic peak cut-off frequency of 103 GHz and a maximum oscillation…”
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A High-Frequency Transconductance Method for Characterization of High- \kappa Border Traps in III-V MOSFETs
Published in IEEE transactions on electron devices (01-02-2013)“…A novel method that reveals the spatial distribution of border traps in III-V metal-oxide-semiconductor field-effect transistors (MOSFETs) is presented. The…”
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5
Radio-Frequency Characterization of Selectively Regrown InGaAs Lateral Nanowire MOSFETs
Published in IEEE transactions on electron devices (01-12-2014)“…We demonstrate InGaAs multigate MOSFETs, so-called FinFETs. The lateral nanowires constituting the channel in these devices have been formed using selective…”
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Vertical InAs/InGaAs Heterostructure Metal–Oxide–Semiconductor Field-Effect Transistors on Si
Published in Nano letters (11-10-2017)“…III–V compound semiconductors offer a path to continue Moore’s law due to their excellent electron transport properties. One major challenge, integrating…”
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Combining Axial and Radial Nanowire Heterostructures: Radial Esaki Diodes and Tunnel Field-Effect Transistors
Published in Nano letters (11-12-2013)“…The ever-growing demand on high-performance electronics has generated transistors with very impressive figures of merit (Radosavljevic et al., IEEE Int…”
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Quantized Conduction and High Mobility in Selectively Grown InxGa1-xAs Nanowires
Published in ACS nano (27-10-2015)“…We report measured quantized conductance and quasi-ballistic transport in selectively regrown In0.85Ga0.15As nanowires. Very low parasitic resistances obtained…”
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High-Current GaSb/InAs(Sb) Nanowire Tunnel Field-Effect Transistors
Published in IEEE electron device letters (01-02-2013)“…We present electrical characterization of GaSb/InAs(Sb) nanowire tunnel field-effect transistors. The broken band alignment of the GaSb/InAs(Sb)…”
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10
Artificial nanophotonic neuron with internal memory for biologically inspired and reservoir network computing
Published in Neuromorphic computing and engineering (01-09-2023)“…Abstract Neurons with internal memory have been proposed for biological and bio-inspired neural networks, adding important functionality. We introduce an…”
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Improved Subthreshold Slope in an InAs Nanowire Heterostructure Field-Effect Transistor
Published in Nano letters (01-09-2006)“…An n-type InAs/InAsP heterostructure nanowire field-effect transistor has been fabricated and compared with a homogeneous InAs field-effect transistor. For the…”
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12
III-V Heterostructure Nanowire Tunnel FETs
Published in IEEE journal of the Electron Devices Society (01-05-2015)“…In this paper, InAs/GaSb nanowire tunnel field-effect transistors (TFETs) are studied theoretically and experimentally. A 2-band 1-D analytic tunneling model…”
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13
How green is an urban tree? The impact of species selection in reducing the carbon footprint of park trees in Swedish cities
Published in Frontiers in sustainable cities (12-06-2023)“…Introduction Planting trees in urban areas can mitigate some of the emissions generated in cities by carbon sequestration (annual uptake of CO 2 through the…”
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Electrical Properties of Vertical InAs/InGaAs Heterostructure MOSFETs
Published in IEEE journal of the Electron Devices Society (2019)“…Vertical InAs/InGaAs nanowire MOSFETs are fabricated in a gate-last fabrication process, which allows gate-lengths down to 25 nm and accurate gate-alignment…”
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Extrinsic and Intrinsic Performance of Vertical InAs Nanowire MOSFETs on Si Substrates
Published in IEEE transactions on electron devices (01-09-2013)“…This paper presents dc and RF characterization as well as modeling of vertical InAs nanowire (NW) MOSFETs with L G =200 nm and Al 2 O 3 /HfO 2 high-κ…”
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Electrical Characterization and Modeling of Gate-Last Vertical InAs Nanowire MOSFETs on Si
Published in IEEE electron device letters (01-08-2016)“…Vertical InAs nanowire transistors are fabricated on Si using a gate-last method, allowing for lithography-based control of the vertical gate length. The best…”
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Temperature dependent properties of InSb and InAs nanowire field-effect transistors
Published in Applied physics letters (12-04-2010)“…We present temperature dependent electrical measurements on InSb and InAs nanowire field-effect transistors (FETs). The FETs are fabricated from InAs/InSb…”
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Relationships among Actual Motor Competence, Perceived Motor Competence, and Health-Related Fitness in College-Aged Males
Published in Sports (Basel) (02-12-2020)“…Actual motor competence (MC), perceived motor competence (PMC), and health-related fitness (HRF) exhibit a dynamic and reciprocal relationship in child…”
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19
Accumulation capacitance of narrow band gap metal-oxide-semiconductor capacitors
Published in Applied physics letters (07-06-2010)“…We have investigated the accumulation capacitance-voltage characteristics for capacitors with narrow band gap materials using modeling and experiments. The…”
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20
RF and DC Analysis of Stressed InGaAs MOSFETs
Published in IEEE electron device letters (01-02-2014)“…A complete reliability study of the DC and RF characteristics for InGaAs nMOSFETs with Al 2 O 3 /HfO 2 dielectric is presented. The main stress variation at…”
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