Search Results - "LIM, Jiyong"
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Increase of Breakdown Voltage on AlGaN/GaN HEMTs by Employing Proton Implantation
Published in IEEE transactions on electron devices (01-03-2009)“…The breakdown voltage of new AlGaN/GaN high electron mobility transistors (HEMTs) was increased considerably without sacrificing any other electrical…”
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Journal Article -
2
Effectiveness of Autologous Fat Graft in Treating Fecal Incontinence
Published in Annals of coloproctology (01-06-2019)“…The most common risk factor for fecal incontinence (FI) is obstetric injury. FI affects 1.4%-18% of adults. Most patients are unaware when they are young, when…”
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3
High-Voltage Schottky Barrier Diode on Silicon Substrate
Published in Japanese Journal of Applied Physics (01-06-2011)“…New GaN Schottky barrier diodes (SBDs) on Si substrates are proposed to achieve a high-breakdown voltage. We have fabricated GaN SBDs using doped…”
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4
High breakdown voltage AlGaN/GaN HEMT by employing selective fluoride plasma treatment
Published in 2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs (01-05-2011)“…We proposed and fabricated AlGaN/GaN HEMT with high stable reverse blocking characteristics employing fluoride plasma treatment using CF 4 gas. The plasma…”
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Conference Proceeding
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5
Effect of oxygen annealing temperature on AlGaN/GaN HEMTs
Published in 2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs (01-05-2011)“…We have investigated an effect of oxygen annealing temperature on the leakage current and breakdown voltage of AlGaN/GaN HEMTs. The breakdown voltage of 830 V…”
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Conference Proceeding -
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A new vertical GaN SBD employing in-situ metallic gallium ohmic contact
Published in 2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs (01-05-2011)“…We proposed and fabricated new vertical GaN Schottky barrier diodes (SBDs) employing in-situ metallic gallium (Ga) ohmic contacts which increase the forward…”
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Conference Proceeding -
7
New Field Plate Structure for Suppression of Leakage Current of AlGaN/GaN High Electron Mobility Transistors
Published in Japanese Journal of Applied Physics (01-04-2007)Get full text
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High voltage AlGaN/GaN High-Electron-Mobility Transistors (HEMTs) employing oxygen annealing
Published in 2010 22nd International Symposium on Power Semiconductor Devices & IC's (ISPSD) (01-06-2010)“…The blocking characteristics of AlGaN/GaN High-Electron-Mobility Transistors (HEMTs) were considerably improved by an oxygen (O 2 ) annealing. This proposed…”
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Conference Proceeding -
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Hot-Carrier-Stress-Induced Degradation of 1 kV AlGaN/GaN HEMTs by Employing SiO2 Passivation
Published in Proceedings of the 19th International Symposium on Power Semiconductor Devices and IC's (01-05-2007)“…High-voltage AlGaN/GaN HEMTs (high-electron-mobility transistors) are fabricated by employing SiO 2 passivation and the degradation due to the hot carrier…”
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Conference Proceeding -
10
High Breakdown Voltage AlGaN/GaN HEMTs by Employing Proton Implantation
Published in 2008 20th International Symposium on Power Semiconductor Devices and IC's (01-05-2008)“…The breakdown voltage of AlGaN/GaN high electron mobility transistors (HEMTs) was increased considerably without sacrificing any other electrical…”
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Conference Proceeding -
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High Performance AlGaN/GaN HEMT Switches Employing 500 ° C Oxidized Ni/Au Gate for Very Low Leakage Current and Improvement of Uniformity
Published in 2006 IEEE International Symposium on Power Semiconductor Devices and IC's (2006)“…The electrical characteristics of HEMT such as leakage current and breakdown voltage were improved considerably by oxidation of Ni/Au Schottky gate of HEMT…”
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Conference Proceeding -
12
Early Experience With a Partial Stapled Hemorrhoidopexy for Treating Patients With Grades III-IV Prolapsing Hemorrhoids
Published in Annals of coloproctology (01-02-2017)“…Circular stapled hemorrhoidopexy (CSH) is widely used to treat patients with grades III-IV hemorrhoids because of less pain and short hospital stay. However,…”
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Journal Article -
13
Design of AlGaN/GaN HEMTs employing mesa field plate for breakdown voltage enhancement
Published in Solid-state electronics (01-04-2010)“…We proposed the AlGaN/GaN high electron mobility transistors (HEMTs) employing the mesa field plate and carried out the detailed numerical simulation of device…”
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14
New AlGaN/GaN HEMTs employing both a floating gate and a field plate
Published in Physica scripta (01-11-2010)Get full text
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15
1.4 kV AlGaN/GaN HEMTs employing As+ ion implantation on SiO2 passivation layer
Published in 2008 IEEE Power Electronics Specialists Conference (01-06-2008)“…We proposed As+ ion implantation on SiO 2 passivation layer of AlGaN/GaN HEMTs to improve the forward and reverse electric characteristics of AlGaN/GaN HEMTs…”
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Conference Proceeding -
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AlGaN/GaN HEMT without Schottky contact on the dry-etched region for high breakdown voltage
Published in 2007 International Semiconductor Device Research Symposium (01-12-2007)“…The purpose of our work is to propose and fabricate a new AlGaN/GaN HEMT without Schottky contact on the dry-etched region to decrease leakage current and to…”
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Conference Proceeding -
17
Channel modulated AlGaN/GaN HEMTs employing fluoride plasma treatment
Published in 2008 IEEE Power Electronics Specialists Conference (01-06-2008)“…We proposed channel modulated AlGaN/GaN high electron mobility transistors (HEMTs) employing fluoride plasma treatment and carried out the detailed numerical…”
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Conference Proceeding -
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AlGaN/GaN high-electron-mobility transistor(HEMT) employing Schottky contact on the unetched region and the silicon dioxide passivation
Published in 2008 IEEE Power Electronics Specialists Conference (01-06-2008)“…AlGaN/GaN high-electron-mobility transistors (HEMTs) which have the Schottky contact only formed on the unetched region and the SiO 2 passivation using an…”
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Conference Proceeding -
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High breakdown voltage AlGaN/GaN HEMTs employing fluoride plasma treatment
Published in Physica scripta (01-12-2008)Get full text
Journal Article -
20
High-Voltage Schottky Barrier Diode on Silicon Substrate
Published in Japanese Journal of Applied Physics (01-06-2011)Get full text
Journal Article