Search Results - "LIAO, A. S. H"

Twofold efficiency improvement in high performance AlGaInP light-emitting diodes in the 555-620 nm spectral region using a thick GaP window layer by HUANG, K. H, YU, J. G, KUO, C. P, FLETCHER, R. M, OSENTOWSKI, T. D, STINSON, L. J, CRAFORD, M. G, LIAO, A. S. H

“…AlGaInP light-emitting diodes (LEDs) with external quantum efficiencies ≥6% and luminous performance of 20 lm/W have been fabricated. These LEDs are twice as…”
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Beryllium implantation doping of InGaAs by TELL, B, LEHENY, R. F, LIAO, A. S. H, BRIDGES, T. J, BURKHARDT, E. G, CHANG, T. Y, BEEBE, E. D

“…Ion implantation doping of Be acceptors in n-In0.53Ga0.47As is reported. A significant improvement in peak concentration, depth control, and solubility is…”
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In0.53Ga0.47As n -channel native oxide inversion mode field-effect transistor by Liao, A. S. H., Tell, B., Leheny, R. F., Chang, T. Y.

“…We describe a native oxide insulated gate, inversion mode In0.53Ga0.47As field-effect transistor. Drain characteristics measured with pulsed gate voltage yield…”
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Monolithic integration of a planar embedded InGaAs p-i-n detector with InP depletion-mode FET's by Tell, B., Liao, A.S.H., Brown-Goebeler, K.F., Bridges, T.J., Burkhardt, G., Chang, T.Y., Bergano, N.S.

“…We report the operation of a fully integrated p-i-n FET circuit based on a planar embedded In 0.53 Ga 0.47 As p-i-n detector and load resistor with InP…”
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Submicrometer self-aligned recessed gate InGaAs MISFET exhibiting very high transconductance by Cheng, C.L., Liao, A.S.H., Chang, T.Y., Leheny, R.F., Coldren, L.A., Lalevic, B.

“…A new submicrometer InGaAs depletion-mode MISFET with a self-aligned recessed gate structure is presented. The techniques used to implement this FET structure…”
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Electron transport in In0.53Ga0.47As/plasma oxide inversion layers by LIAO, A. S. H, LEHENY, R. F, CHANG, T. Y, CARIDI, E. A, BEEBE, E, DE WINTER, J. C

“…In this letter we report the first direct measurements of low field transport properties for inversion layer electrons in an InGaAs native oxide…”
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Monolithic integration of a vertical cavity surface emitting laser and a metal semiconductor field effect transistor by YANG, Y. J, DZIURA, T. G, BARDIN, T, WANG, S. C, FERNANDEZ, R, LIAO, A. S. H

“…Monolithic integration of a vertical cavity surface emitting laser (VCSEL) and a metal semiconductor field effect transistor (MESFET) is reported for the first…”
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Half-ring /GaAl/As double-heterojunction injection lasers by Liao, A S-H, Wang, S

“…Room temperature operation of injection-pumped (GaAl)As half-ring lasers with high mesa stripe geometry is reported. The performance of these lasers is…”
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Semiconductor injection lasers with a circular resonator by Liao, A S-H, Wang, S

“…Outstanding lasing characteristics of a new GaAs-(GaAl)As ring laser is reported. The basic structure of the new laser includes a circular resonator and…”
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VB-1 an N-channel In(0.53 < /inf > Ga(0.47 < /inf > As plasma oxide insulated gate inversion-mode fet by Liao, A S H, Tell, B, Leheny, R F, Chang, T Y, Nahory, R E

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Electron transport in In(0.53)Ga(0.47) As/plasma oxide inversion layers by Liao, A S H, Tell, B, Leheny, R F, Chang, T Y, Caridi, E A, Beebe, E, DeWinter, J C

“…In this letter the first direct measurements of low field transport properties for inversion layer electrons in an InGaAs native oxide…”
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Silicon Oxide enhanced Schottky gate In(0.53)Ga(0.47)As FET' s with a self-aligned recessed gate structure by Cheng, C L, Liao, A S H, Chang, T Y, Caridi, E A, Coldren, L A, Lalevic, B

“…We present the fabrication and characterization of an In(0.53)Ga(0.47)As enhanced Schottky gate FET with a self-aligned recessed gate structure. A thin layer…”
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Silicon oxide enhanced Schottky gate In(0.53)Ga(0.47)As FET's with a self-aligned recessed gate structure by Cheng, C L, Liao, A S H, Chang, T Y, Caridi, E A, Coldren, L A, Lalevic, B

“…The fabrication and characterization of an In(0.53)Ga(0.47)As enhanced Schottky gate FET with a self-aligned recessed gate structure are presented. A thin…”
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New self-aligned recessed-gate InP MESFET by Cheng, C L, Coldren, L A, Miller, B I, Liao, A S H, Leheny, R F, Lalevic, B

“…The authors describe a new self-aligned recessed-gate InP MESFET. In this structure, material selective and anisotropic etching properties of InP/InGaAsP…”
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An In(0.53)Ga(0.47)As/Si(3)N(4)n-channel inversion mode MISFET by Liao, A S H, Leheny, R F, Nahory, R E, De Winter, J C

“…We describe the operation of an n-channel inversion-mode In(0.53)Ga(0.47)As MISFET with a Si(3)N(4)insulating layer. This device exhibits a transconductance of…”
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Silicon oxide enhanced Schottky gate In sub(0.53)Ga sub(0.47)As FET's with a self-aligned recessed gate structure by Cheng, C L, Liao, A S H, Chang, T Y, Caridi, E A, Coldren, L A, Lalevic, B

“…The authors present the fabrication and characterization of an In sub(0.53)Ga sub(0.47)As enhanced Schottky gate FET with a self-aligned recessed gate…”
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Silicon oxide enhanced Schottky gate In0.53Ga0.47AsFET's with a self-aligned recessed gate structure by CHENG, C. L, LIAO, A. S. H, CHANG, T. Y, CARIDI, E. A, COLDREN, L. A, LALEVIC, B

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Half-ring (GaAl)As double-heterojunction injection lasers by Liao, Andrew Shuh-Huei, Wang, Shyh

“…We report room temperature operation of injection-pumped (GaAl)As half-ring lasers with high mesa stripe geometry. The performance of these lasers is compared…”
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An In(0.53)Ga(0.47)As p-channel MOSFET with plasma-grown native oxide insulated gate by Liao, A S H, Tell, B, Leheny, R F, Nahory, R E, DeWinter, J C, Martin, R J

“…We describe the operation of an In(0.53)Ga(0.47)As p-channel inversion mode MOSFET with plasma grown native oxide insulated gate. This device exhibits a…”
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VIA-5 enhanced Schottky-gate InGaAs field-effect transistors using e-beam evaporated silicon oxide by Cheng, C.L., Lalevic, B., Liao, A.S.H., Chang, T.Y., Caridi, E.A., Coldren, L.A.

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