Search Results - "LEE, Joonmyoung"

Investigation of State Stability of Low-Resistance State in Resistive Memory by Jubong Park, Minseok Jo, Bourim, El Mostafa, Jaesik Yoon, Dong-Jun Seong, Joonmyoung Lee, Wootae Lee, Hyunsang Hwang

“…We investigated the state stability of the low-resistance state (LRS) in a resistive switching memory having a Pt/Cu:MoO x /GdO x /Pt structure. Various…”
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Improved Switching Uniformity and Speed in Filament-Type RRAM Using Lightning Rod Effect by PARK, Jubong, JO, Minseok, LEE, Joonmyoung, JUNG, Seungjae, KIM, Seonghyun, LEE, Wootae, SHIN, Jungho, HWANG, Hyunsang

“…Improved switching uniformity and speed were demonstrated using a filament-type resistive memory. By using a gradual reset operation, a leaky high resistance,…”
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Parallel memristive filaments model applicable to bipolar and filamentary resistive switching by Liu, Xinjun, Biju, Kuyyadi P., Lee, Joonmyoung, Park, Jubong, Kim, Seonghyun, Park, Sangsu, Shin, Jungho, Sadaf, Sharif Md, Hwang, Hyunsang

“…The concept of memristive filaments (MFs) is introduced, which is based on the memristors developed by the Hewlett-Packard group. The effects of key parameters…”
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Effect of Program/Erase Speed on Switching Uniformity in Filament-Type RRAM by SHIN, Jungho, PARK, Jubong, LEE, Joonmyoung, PARK, Sangsu, KIM, Seonghyun, LEE, Wootae, KIM, Insung, LEE, Daeseok, HWANG, Hyunsang

“…We investigated the effect of program/erase speed on switching uniformity in filament-type resistive memory with Mo/SiO x /Pt structure. The RRAM device…”
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Excellent State Stability of Cu/SiC/Pt Programmable Metallization Cells for Nonvolatile Memory Applications by LEE, Wootae, PARK, Jubong, SON, Myungwoo, LEE, Joonmyoung, JUNG, Seungjae, KIM, Seonghyun, PARK, Sangsu, SHIN, Jungho, HWANG, Hyunsang

“…We have investigated silicon carbide (SiC) as a new programmable metallization cell material for nonvolatile memory applications. Our Cu/SiC/Pt devices showed…”
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Operation Voltage Control in Complementary Resistive Switches Using Heterodevice by Daeseok Lee, Jubong Park, Seungjae Jung, Godeuni Choi, Joonmyoung Lee, Seonghyun Kim, Jiyong Woo, Siddik, M., Eujun Cha, Hyunsang Hwang

“…For the high-density memory application of resistive random access memory (ReRAM), we study the complementary resistive switch (CRS) behavior of a HfO x -based…”
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Materials and process aspect of cross-point RRAM (invited) by Lee, Joonmyoung, Jo, Minseok, Seong, Dong-jun, Shin, Jungho, Hwang, Hyunsang

“…A survey of non-volatile and highly scalable cross-point memory in nanoscale resistive switching device is introduced. We present the basic operation of…”
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New Set/Reset Scheme for Excellent Uniformity in Bipolar Resistive Memory by PARK, Jubong, JO, Minseok, JUNG, Seungjae, LEE, Joonmyoung, LEE, Wootae, KIM, Seonghyun, PARK, Sangsu, SHIN, Jungho, HWANG, Hyunsang

“…We proposed a new set/reset operation scheme to improve the switching uniformity of filament-type resistive memory. By controlling the magnitude of the sweep…”
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Nanoscale Resistive Switching of a Copper-Carbon-Mixed Layer for Nonvolatile Memory Applications by Hyejung Choi, Myeongbum Pyun, Tae-Wook Kim, Hasan, M., Rui Dong, Joonmyoung Lee, Ju-Bong Park, Jaesik Yoon, Dong-jun Seong, Takhee Lee, Hyunsang Hwang

“…The nanoscale resistance switching property of copper-carbon-mixed (Cu-C) layer was investigated for nonvolatile memory applications. The Cu-C layer of the…”
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Improved switching uniformity of a carbon-based conductive-bridge type ReRAM by controlling the size of conducting filament by Park, Jubong, Jo, Minseok, Lee, Joonmyoung, Jung, Seungjae, Lee, Wootae, Kim, Seonghyun, Park, Sangsu, Shin, Jungho, Hwang, Hyunsang

“…We investigated the resistive switching properties of a amorphous carbon-based ReRAM device. In order to minimize the fluctuations of switching parameters, we…”
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Noise-Analysis-Based Model of Filamentary Switching ReRAM With \hbox/\hbox Stacks by Daeseok Lee, Joonmyoung Lee, Minseok Jo, Jubong Park, Siddik, M., Hyunsang Hwang

“…In this letter, we propose a model based on noise analysis for the filamentary switching mechanism in resistance random access memory having ZrOx/HfOx bilayer…”
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Effect of \hbox\hbox\hbox Thermal Barrier on Reset Operations in Filament-Type Resistive Memory by Wootae Lee, Siddik, M., Seungjae Jung, Jubong Park, Seonghyun Kim, Jungho Shin, Joonmyoung Lee, Sangsu Park, Myungwoo Son, Hyunsang Hwang

“…We have investigated the effect of a Ge 2 Sb 2 Te 5 (GST) thermal barrier on the reset operations in TiN/Cu/SiC/Pt devices. When the GST film was introduced as…”
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Excellent Selector Characteristics of Nanoscale \hbox for High-Density Bipolar ReRAM Applications by Son, Myungwoo, Lee, Joonmyoung, Park, Jubong, Shin, Jungho, Choi, Godeuni, Jung, Seungjae, Lee, Wootae, Kim, Seonghyun, Park, Sangsu, Hwang, Hyunsang

“…We herein present a nanoscale vanadium oxide (VO 2 ) device with excellent selector characteristics such as a high on/off ratio (>; 50), fast switching speed…”
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Proton Irradiation Effects on Resistive Random Access Memory With ZrO /HfO Stacks by Daeseok Lee, Joonmyoung Lee, Seungjae Jung, Seonghyun Kim, Jubong Park, Biju, K. P., Minhyeok Choe, Takhee Lee, Hyunsang Hwang

“…In this study, we investigated proton irradiation effects on resistive random access memory (ReRAM) comprising ZrO x /HfO x stacks. After irradiation, changes…”
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Multibit Operation of \hbox -Based ReRAM by Schottky Barrier Height Engineering by Jubong Park, Biju, K P, Seungjae Jung, Wootae Lee, Joonmyoung Lee, Seonghyun Kim, Sangsu Park, Jungho Shin, Hyunsang Hwang

“…We demonstrated multibit operation using a 250-nm Ir/TiO x / TiN resistive random access memory by Schottky barrier height engineering. A Schottky barrier was…”
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Feasibility Study of \hbox/\hbox Resistive Random Access Memory in an Inverter Circuit for FPGA Applications by Sangsu Park, Jungho Shin, Cimino, S., Seungjae Jung, Joonmyoung Lee, Seonghyun Kim, Jubong Park, Wootae Lee, Myungwoo Son, Byunghun Lee, Pantisano, L., Hyunsang Hwang

“…We proposed a Mo/SiO x /Pt resistive random access memory (RRAM) device as an alternative to static random access memory (SRAM) devices for field-programmable…”
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Analysis of copper ion filaments and retention of dual-layered devices for resistance random access memory applications by Yoon, Jaesik, Lee, Joonmyoung, Choi, Hyejung, Park, Ju-Bong, Seong, Dong-jun, Lee, Wootae, Cho, Chunhum, Kim, Seonghyun, Hwang, Hyunsang

“…For improvement of switching uniformity, we propose a dual-layer structure with different resistance values in each layer. During the forming process, a…”
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Effect of Fast Components in Threshold-Voltage Shift on Bias Temperature Instability in High- k MOSFETs by Minseok Jo, Seonghyun Kim, Seungjae Jung, Ju-Bong Park, Joonmyoung Lee, Hyung-Suk Jung, Choi, R., Hyunsang Hwang

“…The effect of fast components in the threshold-voltage shift (¿V th ) induced by electrical stress on the lifetime of bias temperature instability (BTI) is…”
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Novel cross-point resistive switching memory with self-formed schottky barrier by Minseok Jo, Dong-jun Seong, Seonghyun Kim, Joonmyoung Lee, Wootae Lee, Ju-Bong Park, Sangsoo Park, Seungjae Jung, Jungho Shin, Daeseok Lee, Hyunsang Hwang

“…By characterizing the resistive switching state in Al/PCMO device, we propose, for the first time, the feasibility of cross-point memory without any selection…”
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Impact of oxygen incorporation at the Si3N4∕Al2O3 interface on retention characteristics for nonvolatile memory applications by Chang, Man, Ju, Yongkyu, Lee, Joonmyoung, Jung, Seungjae, Choi, Hyejung, Jo, Minseok, Jeon, Sanghun, Hwang, Hyunsang

“…The correlation between properties of the Si3N4∕Al2O3 interface and retention degradation was investigated for metal-alumina-nitride-oxide-silicon-type flash…”
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