Search Results - "LEE, Daeseok"

Threshold Selector With High Selectivity and Steep Slope for Cross-Point Memory Array by Jeonghwan Song, Jiyong Woo, Prakash, Amit, Daeseok Lee, Hyunsang Hwang

“…In this letter, we demonstrated a new type of threshold selector with excellent electrical characteristics for cross-point memory array. The proposed Ag/TiO 2…”
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Turbocharging protein binding site prediction with geometric attention, inter-resolution transfer learning, and homology-based augmentation by Lee, Daeseok, Hwang, Wonjun, Byun, Jeunghyun, Shin, Bonggun

“…Locating small molecule binding sites in target proteins, in the resolution of either pocket or residue, is critical in many drug-discovery scenarios. Since it…”
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Solid state thin electrolyte to overcome transparency-capacity dilemma of transparent supercapacitor by Seo, Jongseon, Han, Geonhui, Kim, Hyejin, Lee, Daeseok

“…For portable and transparent electronic applications, transparent supercapacitor (T-SC) is developed to act as an energy storing device. Because electric and…”
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Comprehensive scaling study of NbO2 insulator-metal-transition selector for cross point array application by Cha, Euijun, Park, Jaehyuk, Woo, Jiyong, Lee, Daeseok, Prakash, Amit, Hwang, Hyunsang

“…The transition metal oxide, NbO2, which exhibits an insulator to metal transition (IMT) is regarded as a promising selector device to be integrated with a…”
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Three-dimensional vertical structural electrochemical random access memory for high-density integrated synapse device by Kim, Hyejin, Seo, Jongseon, Cho, Seojin, Jeon, Seonuk, Woo, Jiyong, Lee, Daeseok

“…Three-terminal (3T) structured electrochemical random access memory (ECRAM) has been proposed as a synaptic device based on improved synaptic characteristics…”
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Effect of high-pressure oxygen annealing on negative bias illumination stress-induced instability of InGaZnO thin film transistors by Ji, Kwang Hwan, Kim, Ji-In, Jung, Hong Yoon, Park, Se Yeob, Choi, Rino, Kim, Un Ki, Hwang, Cheol Seong, Lee, Daeseok, Hwang, Hyungsang, Jeong, Jae Kyeong

“…Negative-bias illumination stress (NBIS) of amorphous InGaZnO (IGZO) transistors can cause a large negative shift ( > 7.1   V ) in threshold voltage, something…”
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Impact of Oxygen Reservoir Layer on 3T Oxygen Ion‐based Electrochemical Random Access Memory Performance by Kim, Hyejin, Han, Geonhui, Seo, Jongseon, Lee, Daeseok

“…This study investigates the impact of an oxygen reservoir layer on the performance of three‐terminal (3T) oxide ion‐based electrochemical random access memory…”
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Ag-Ion-Based Transparent Threshold Switching Selector with Filament-Size-Dependent Rectifying Behavior by Seo, Jongseon, Han, Geonhui, Kim, Hyejin, Lee, Daeseok

“…A metal–insulator–metal-structured Ag-filament-based transparent threshold switch is developed as a selector device for a crossbar array, which can lead to…”
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Alternative negative weight for simpler hardware implementation of synapse device based neuromorphic system by Han, Geonhui, Lee, Chuljun, Lee, Jae-Eun, Seo, Jongseon, Kim, Myungjun, Song, Yubin, Seo, Young-Ho, Lee, Daeseok

“…Lately, there has been a rapid increase in the use of software-based deep learning neural networks (S-DNN) for the analysis of unstructured data consumption…”
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Internal Resistor Effect of Multilayer-Structured Synaptic Device for Low-Power Operation by Kim, Hyejin, Han, Geonhui, Cho, Seojin, Woo, Jiyong, Lee, Daeseok

“…A synaptic device with a multilayer structure is proposed to reduce the operating power of neuromorphic computing systems while maintaining a high-density…”
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Engineering Oxygen Vacancy of Tunnel Barrier and Switching Layer for Both Selectivity and Reliability of Selector-Less ReRAM by Lee, Sangheon, Lee, Daeseok, Woo, Jiyong, Cha, Euijun, Park, Jaesung, Hwang, Hyunsang

“…The resistive switching behaviors of selector-less resistive random access memory (ReRAM) have been extensively investigated to eliminate the tradeoff between…”
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Complementary Resistive Switching in Niobium Oxide-Based Resistive Memory Devices by Xinjun Liu, Sadaf, S. M., Sangsu Park, Seonghyun Kim, Euijun Cha, Daeseok Lee, Gun-Young Jung, Hyunsang Hwang

“…For the applications of resistive random access memory (RRAM), we study the complementary resistive switch (CRS) behavior of a bilayer Nb 2 O 5-∞ /NbO y RRAM…”
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Control of Cu Conductive Filament in Complementary Atom Switch for Cross-Point Selector Device Application by Woo, Jiyong, Lee, Daeseok, Cha, Euijun, Lee, Sangheon, Park, Sangsu, Hwang, Hyunsang

“…We present a novel approach to realize bidirectional/bipolar current-voltage characteristics for cross-point selector device application. These utilize the…”
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Ion-Driven Electrochemical Random-Access Memory-Based Synaptic Devices for Neuromorphic Computing Systems: A Mini-Review by Kang, Heebum, Seo, Jongseon, Kim, Hyejin, Kim, Hyun Wook, Hong, Eun Ryeong, Kim, Nayeon, Lee, Daeseok, Woo, Jiyong

“…To enhance the computing efficiency in a neuromorphic architecture, it is important to develop suitable memory devices that can emulate the role of biological…”
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Vertically Stacked ReRAM Composed of a Bidirectional Selector and CB-RAM for Cross-Point Array Applications by Woo, Jiyong, Lee, Daeseok, Cha, Euijun, Lee, Sangheon, Park, Sangsu, Hwang, Hyunsang

“…In this letter, we discuss our technique for fabricating a vertically stacked ReRAM device composed of one selector and one resistor (1S-1R). We demonstrate…”
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Effects of RESET Current Overshoot and Resistance State on Reliability of RRAM by Jeonghwan Song, Daeseok Lee, Jiyong Woo, Yunmo Koo, Euijun Cha, Sangheon Lee, Jaesung Park, Kibong Moon, Misha, Saiful Haque, Prakash, Amit, Hyunsang Hwang

“…Current overshoot has severe effects on the reliability of resistive random access memory (RRAM). It is well known that the current overshoot during the SET…”
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Threshold-switching characteristics of a nanothin-NbO2-layer-based Pt/NbO2/Pt stack for use in cross-point-type resistive memories by Kim, Seonghyun, Park, Jubong, Woo, Jiyong, Cho, Chunhum, Lee, Wootae, Shin, Jungho, Choi, Godeuni, Park, Sangsu, Lee, Daeseok, Lee, Byoung Hun, Hwang, Hyunsang

“…[Display omitted] ► We fabricated a nanothin layer of Pt/NbO2/Pt stack which shows threshold-switching property. ► The Pt/NbO2/Pt device exhibited a high…”
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Defect Engineering Using Bilayer Structure in Filament-Type RRAM by Lee, Daeseok, Woo, Jiyong, Cha, Euijun, Park, Sangsu, Lee, Sangheon, Park, Jaesung, Hwang, Hyunsang

“…To develop a low-power and stable resistive RAM, a defect engineering using bilayer structure is proposed. To control the amount of defect in switching layer,…”
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Memory and Energy Storage Dual Operation in Chalcogenide-Based CBRAM by Daeseok Lee, Oukassi, Sami, Molas, Gabriel, Carabasse, Catherine, Salot, Raphael, Perniola, Luca

“…In this paper, we demonstrated memory and energy storage dual operation in GeS2/Ag conducting bridge RAM. Both operations are based on electrochemical…”
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Improved Switching Variability and Stability by Activating a Single Conductive Filament by PARK, Jubong, JUNG, Seungjae, LEE, Wootae, KIM, Seonghyun, SHIN, Jungho, LEE, Daeseok, WOO, Jiyong, HWANG, Hyunsang

“…We successfully fabricated a single-filament-activated resistive memory having limited conductive filament (CF) source through a novel fabrication technique…”
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