Search Results - "LEBEAU, J.M."

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  1. 1

    A deep convolutional neural network to analyze position averaged convergent beam electron diffraction patterns by Xu, W., LeBeau, J.M.

    Published in Ultramicroscopy (01-05-2018)
    “…•A deep convolutional neural network is established to measure PACBED parameters including size, center, rotation, thickness and tilt.•The convolutional neural…”
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    Journal Article
  2. 2

    Carbon stoichiometry and mechanical properties of high entropy carbides by Hossain, M.D., Borman, T., Kumar, A., Chen, X., Khosravani, A., Kalidindi, S.R., Paisley, E.A., Esters, M., Oses, C., Toher, C., Curtarolo, S., LeBeau, J.M., Brenner, D., Maria, J-P

    Published in Acta materialia (15-08-2021)
    “…The search for new materials via compositional exploration has recently led to the discovery of entropy stabilized and high entropy ceramics. The chemical…”
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    Journal Article
  3. 3

    Detector non-uniformity in scanning transmission electron microscopy by Findlay, S.D., LeBeau, J.M.

    Published in Ultramicroscopy (01-01-2013)
    “…A non-uniform response across scanning transmission electron microscope annular detectors has been found experimentally, but is seldom incorporated into…”
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    Journal Article
  4. 4

    Quantitative atomic resolution elemental mapping via absolute-scale energy dispersive X-ray spectroscopy by Chen, Z., Weyland, M., Sang, X., Xu, W., Dycus, J.H., LeBeau, J.M., D'Alfonso, A.J., Allen, L.J., Findlay, S.D.

    Published in Ultramicroscopy (01-09-2016)
    “…Quantitative agreement on an absolute scale is demonstrated between experiment and simulation for two-dimensional, atomic-resolution elemental mapping via…”
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    Journal Article
  5. 5

    A reliable approach to prepare brittle semiconducting materials for cross‐sectional transmission electron microscopy by DYCUS, J.H., LEBEAU, J.M.

    Published in Journal of microscopy (Oxford) (01-12-2017)
    “…Summary Here, we present a sample preparation approach that simplifies the thinning of very brittle wide bandgap semiconducting materials in cross‐section…”
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    Journal Article
  6. 6

    Influence of experimental conditions on atom column visibility in energy dispersive X-ray spectroscopy by Dycus, J.H., Xu, W., Sang, X., D'Alfonso, A.J., Chen, Z., Weyland, M., Allen, L.J., Findlay, S.D., LeBeau, J.M.

    Published in Ultramicroscopy (01-12-2016)
    “…Here we report the influence of key experimental parameters on atomically resolved energy dispersive X-ray spectroscopy (EDX). In particular, we examine the…”
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    Journal Article
  7. 7
  8. 8

    Atom site preference and γ′/γ mismatch strain in NiAlCoTi superalloys by Oni, A.A., Broderick, S.R., Rajan, K., LeBeau, J.M.

    Published in Intermetallics (01-06-2016)
    “…The structure and chemistry of NiCoAlTi quaternary superalloys are investigated at the microstructural and atomic scale. Atom probe tomograghy (APT) is used to…”
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    Journal Article
  9. 9

    Numerical modeling of specimen geometry for quantitative energy dispersive X-ray spectroscopy by Xu, W., Dycus, J.H., LeBeau, J.M.

    Published in Ultramicroscopy (01-01-2018)
    “…•3D approach to model complex specimen shapes for EDS quantification when using multiple detectors.•Sample geometry can greatly impact the accuracy of EDS…”
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    Journal Article
  10. 10

    A numerical model for multiple detector energy dispersive X-ray spectroscopy in the transmission electron microscope by Xu, W., Dycus, J.H., Sang, X., LeBeau, J.M.

    Published in Ultramicroscopy (01-05-2016)
    “…Here we report a numerical approach to model a four quadrant energy dispersive X-ray spectrometer in the transmission electron microscope. The model includes…”
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    Journal Article
  11. 11

    Structure and magnetic properties of a multi-principal element Ni–Fe–Cr–Co–Zn–Mn alloy by Zaddach, A.J., Niu, C., Oni, A.A., Fan, M., LeBeau, J.M., Irving, D.L., Koch, C.C.

    Published in Intermetallics (01-01-2016)
    “…A nanocrystalline alloy with a nominal composition of Ni20Fe20Cr20Co20Zn15Mn5 was produced by mechanical alloying and processed using annealing treatments…”
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    Journal Article
  12. 12

    Effect of B and Cr on elastic strength and crystal structure of Ni3Al alloys under high pressure by Raju, S.V., Oni, A.A., Godwal, B.K., Yan, J., Drozd, V., Srinivasan, S., LeBeau, J.M., Rajan, K., Saxena, S.K.

    Published in Journal of alloys and compounds (15-01-2015)
    “…•Ni3Al, Ni3Al:B and Ni ̶ Al ̶ Cr alloys were prepared by Bridgman-Stockburger technique.•Crystal structures confirmed by XRD and Electron microscopy…”
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    Journal Article
  13. 13

    The role of terminal oxide structure and properties in nanothermite reactions by Mily, E.J., Oni, A., LeBeau, J.M., Liu, Y., Brown-Shaklee, H.J., Ihlefeld, J.F., Maria, J.-P.

    Published in Thin solid films (01-07-2014)
    “…In this report, thin films of copper oxide, a common thermite oxidant, and varying metallic species (Al, Zr, and Mg) were deposited in an alternating layered…”
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    Journal Article
  14. 14

    Phase coexistence in Ti6Sn5 intermetallics by Oni, A.A., Hook, D., Maria, J.P., LeBeau, J.M.

    Published in Intermetallics (01-08-2014)
    “…Here we report the structural characterization of a complex Ti–Sn intermetallic compound, Ti6Sn5. From X-ray diffraction, the resulting compound was observed…”
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  15. 15

    Thermal diffuse scattering in transmission electron microscopy by Forbes, B.D., D'Alfonso, A.J., Findlay, S.D., Van Dyck, D., LeBeau, J.M., Stemmer, S., Allen, L.J.

    Published in Ultramicroscopy (01-12-2011)
    “…In conventional transmission electron microscopy, thermal scattering significantly affects the image contrast. It has been suggested that not accounting for…”
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    Journal Article
  16. 16
  17. 17

    Applications of advanced transmission electron microscopy techniques in gate stack scaling by Stemmer, S., LeBeau, J.M., Cagnon, J., Yoontae Hwang, Engel-Herbert, R.

    Published in 2009 Symposium on VLSI Technology (01-06-2009)
    “…Advanced gate dielectric stacks are comprised of multiple layers of different materials, including high-k gate dielectrics, high-mobility semiconductor…”
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    Conference Proceeding