Search Results - "LE SI DANG, Daniel"

M-Plane Core–Shell InGaN/GaN Multiple-Quantum-Wells on GaN Wires for Electroluminescent Devices by Koester, Robert, Hwang, Jun-Seok, Salomon, Damien, Chen, Xiaojun, Bougerol, Catherine, Barnes, Jean-Paul, Dang, Daniel Le Si, Rigutti, Lorenzo, de Luna Bugallo, Andres, Jacopin, Gwénolé, Tchernycheva, Maria, Durand, Christophe, Eymery, Joël

“…Nonpolar InGaN/GaN multiple quantum wells (MQWs) grown on the {11̅00} sidewalls of c-axis GaN wires have been grown by organometallic vapor phase epitaxy on…”
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Undoped and rare-earth doped GaN quantum dots on AlGaN by Hori, Yuji, Andreev, Thomas, Florian, Thomas, Bellet-Amalric, Edith, Le Si Dang, Daniel, Tanaka, Mitsuhiro, Oda, Osamu, Daudin, Bruno

“…We study the self organized growth of GaN quantum dots deposited by molecular beam epitaxy on AlxGa1–xN, with x varying between 1 and 0.21. As a result of the…”
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Eu locations in Eu-doped InGaN∕GaN quantum dots by Andreev, Thomas, Monroy, Eva, Gayral, Bruno, Daudin, Bruno, Liem, Nguyen Quang, Hori, Yuji, Tanaka, Mitsuhiro, Oda, Osamu, Le Si Dang, Daniel

“…We report on the photoluminescence and photoluminescence excitation studies of Eu-doped wurtzite InGaN quantum dots (QDs) embedded in a GaN matrix grown by…”
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Comparative optical study of Eu3+ ions doping in InGaN/GaN quantum dots and GaN layer grown by molecular beam epitaxy by ANDREEV, Thomas, NGUYEN QUANG LIEM, HORI, Yuji, TANAKA, Mitsuhiro, ODA, Osamu, DAUDIN, Bruno, LE SI DANG, Daniel

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Intraband spectroscopy of self-organized GaN/AlN quantum dots by Helman, Ana, Fossard, Frédéric, Tchernycheva, Maria, Moumanis, Khalid, Lusson, Alain, Julien, François, Damilano, Benjamin, Grandjean, Nicolas, Massies, Jean, Adelman, Christophe, Daudin, Bruno, Le Si Dang, Daniel

“…GaN/AlN quantum dots grown by molecular beam epitaxy either on silicon (1 1 1), sapphire or 6H–SiC (0 0 0 1) substrate have been investigated using…”
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Formation of an exciton polariton condensate: thermodynamic versus kinetic regimes by Kasprzak, J, Solnyshkov, D D, André, R, Dang, Le Si, Malpuech, G

“…We measure the polariton distribution function and the condensation threshold versus the photon-exciton detuning and the lattice temperature in a CdTe…”
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One-dimensional ZnO exciton polaritons with negligible thermal broadening at room temperature by Trichet, A., Sun, L., Pavlovic, G., Gippius, N.A., Malpuech, G., Xie, W., Chen, Z., Richard, M., Dang, Le Si

“…Single ZnO microwires are investigated by angle-resolved photoluminescence spectroscopy. We show that confined optical modes similar to whispering gallery…”
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Second-order time correlations within a polariton Bose-Einstein condensate in a CdTe microcavity by Kasprzak, J, Richard, M, Baas, A, Deveaud, B, André, R, Poizat, J-Ph, Dang, Le Si

“…Second-order time correlations of polaritons have been measured across the condensation threshold in a CdTe microcavity. The onset of Bose-Einstein…”
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Build up and pinning of linear polarization in the Bose condensates of exciton polaritons by Kasprzak, J., André, R., Dang, Le Si, Shelykh, I. A., Kavokin, A. V., Rubo, Yuri G., Kavokin, K. V., Malpuech, G.

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Dynamics of long-range ordering in an exciton-polariton condensate by Nardin, G, Lagoudakis, K G, Wouters, M, Richard, M, Baas, A, André, R, Dang, Le Si, Pietka, B, Deveaud-Plédran, B

“…We report on time-resolved measurements of the first order spatial coherence in an exciton-polariton Bose-Einstein condensate. Long-range spatial coherence is…”
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Wafer-scale selective area growth of GaN hexagonal prismatic nanostructures on c-sapphire substrate by Chen, Xiao Jun, Hwang, Jun-Seo, Perillat-Merceroz, Guillaume, Landis, Stefan, Martin, Brigitte, Dang, Daniel Le Si, Eymery, Joël, Durand, Christophe

“…Journal of Crystal Growth 322, 1 (2011) 15 Selective area growth of GaN nanostructures has been performed on full 2" c-sapphire substrates using Si3N4 mask…”
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Wafer-scale selective area growth of GaN hexagonal prismatic nanostructures on c-sapphire substrate by Chen, X.J., Hwang, J.S., Perillat-Merceroz, G., Landis, S., Martin, B., Le Si Dang, D., Eymery, J., Durand, C.

“…Selective area growth of GaN nanostructures has been performed on full 2″ c-sapphire substrates using Si 3N 4 mask patterned by nanoimprint lithography (array…”
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Strong carrier localization and diminished quantum-confined Stark effect in ultra-thin high-indium-content InGaN quantum wells with violet light emission by Ko, Suk-Min, Kwack, Ho-Sang, Park, Chunghyun, Yoo, Yang-Seok, Kwon, Soon-Yong, Jin Kim, Hee, Yoon, Euijoon, Si Dang, Le, Cho, Yong-Hoon

“…Here, we report on the optical and structural characteristics of violet-light-emitting, ultra-thin, high-Indium-content (UTHI) InGaN/GaN multiple quantum wells…”
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Evidence for low density of nonradiative defects in ZnO nanowires grown by metal organic vapor-phase epitaxy by Robin, I. C., Gauron, B., Ferret, P., Tavares, C., Feuillet, G., Dang, Le Si, Gayral, B., Gérard, J. M.

“…Low temperature cathodoluminescence and temperature dependent time resolved photoluminescence are used to investigate the emission properties of ZnO nanowires…”
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Optical polariton properties in ZnSe-based planar and pillar structured microcavities by Sebald, K., Trichet, A., Richard, M., Dang, L. S., Seyfried, M., Klembt, S., Kruse, C., Hommel, D.

“…Strong coupling is demonstrated in monolithic ZnSe-based microcavities. Under nonresonant excitation the polariton dispersion has been investigated in…”
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M-Plane Core―Shell InGaN/GaN Multiple-Quantum-Welis on GaN Wires for Electroluminescent Devices by KOESTER, Robert, HWANG, Jun-Seok, TCHERNYCHEVA, Maria, DURAND, Christophe, EYMERY, Joël, SALOMON, Damien, XIAOJUN CHEN, BOUGEROL, Catherine, BARNES, Jean-Paul, DANG, Daniel Le Si, RIGUTTI, Lorenzo, DE LUNA BUGALLO, Andres, JACOPIN, Gwénolé

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Growth and properties of defect-free ZnSe nanowires and nanoneedles by Aichele, Thomas, Tribu, Adrien, Bougerol, Catherine, Kheng, Kuntheak, Donatini, Fabrice, Dang, Le Si, André, Régis, Tatarenko, Serge

“…ZnSe nanowires heterostructures were grown by molecular beam epitaxy in the vapour–liquid–solid growth mode assisted by gold catalysts. Size, shape and crystal…”
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Coexisting nonequilibrium condensates with long-range spatial coherence in semiconductor microcavities by Krizhanovskii, D. N., Lagoudakis, K. G., Wouters, M., Pietka, B., Bradley, R. A., Guda, K., Whittaker, D. M., Skolnick, M. S., Deveaud-Plédran, B., Richard, M., André, R., Dang, Le Si

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Eu locations in Eu-doped In Ga N ∕ Ga N quantum dots by Andreev, Thomas, Monroy, Eva, Gayral, Bruno, Daudin, Bruno, Liem, Nguyen Quang, Hori, Yuji, Tanaka, Mitsuhiro, Oda, Osamu, Le Si Dang, Daniel

“…We report on the photoluminescence and photoluminescence excitation studies of Eu-doped wurtzite InGaN quantum dots (QDs) embedded in a GaN matrix grown by…”
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Comparative optical study of Eu 3+ ions doping in InGaN/GaN quantum dots and GaN layer grown by molecular beam epitaxy by Andreev, Thomas, Liem, Nguyen Quang, Hori, Yuji, Tanaka, Mitsuhiro, Oda, Osamu, Daudin, Bruno, Si Dang, Daniel Le

“…We report on a comparative optical study of InGaN:Eu quantum dots (QDs) and GaN:Eu layer grown by molecular beam epitaxy (MBE). Analysis of the 5D 0 → 7F 2…”
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