Search Results - "LAMPHIER, S."

Ligand-induced conformational changes allosterically activate Toll-like receptor 9 by Latz, Eicke, Golenbock, Douglas T, Verma, Anjali, Visintin, Alberto, Gong, Mei, Sirois, Cherilyn M, Klein, Dionne C G, Monks, Brian G, McKnight, C James, Lamphier, Marc S, Duprex, W Paul, Espevik, Terje

“…Microbial and synthetic DNA rich in CpG dinucleotides stimulates Toll-like receptor 9 (TLR9), whereas DNA lacking CpG either is inert or can inhibit TLR9…”
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Eosinophilic oesophagitis in patients presenting with dysphagia – a prospective analysis by MACKENZIE, S. H., GO, M., CHADWICK, B., THOMAS, K., FANG, J., KUWADA, S., LAMPHIER, S., HILDEN, K., PETERSON, K.

“…Summary Background  Eosinophilic oesophagitis (EoO) may be a common finding in adults presenting with dysphagia. Aim  To identify the risk factors and…”
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TLR9 and the Recognition of Self and Non-Self Nucleic Acids by LAMPHIER, MARC S., SIROIS, CHERILYN M., VERMA, ANJALI, GOLENBOCK, DOUGLAS T., LATZ, EICKE

“…:  Toll‐like receptors (TLRs) are involved in the innate recognition of foreign material and their activation leads to both innate and adaptive immune…”
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An SRAM Design in 65-nm Technology Node Featuring Read and Write-Assist Circuits to Expand Operating Voltage by Pilo, H., Barwin, C., Braceras, G., Browning, C., Lamphier, S., Towler, F.

“…This paper describes a 32-Mb SRAM that has been designed and fabricated in a 65-nm low-power CMOS Technology. The 62-mm 2 die features read-assist and…”
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An IRF-1-dependent pathway of DNA damage-induced apoptosis in mitogen-activated T lymphocytes by Tamura, Tomohiko, Ishihara, Masahiko, Lamphier, Marc S, Tanaka, Nobuyuki, Oishi, Isao, Aizawa, Shinichi, Matsuyama, Toshifumi, Mak, Tak W, Taki, Shinsuke, Taniguchi, Tadatsugu

“…Lymphocytes are particularly susceptible to DNA damage-induced apoptosis, a response which may serve as a form of 'altruistic suicide' to counter their…”
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Cooperation of the tumour suppressors IRF-1 and p53 in response to DNA damage by Tanaka, Nobuyuki, Ishihara, Masahiko, Lamphier, Marc S, Nozawa, Hiroaki, Matsuyama, Toshifumi, Mak, Tak W, Aizawa, Shinichi, Tokino, Takashi, Oren, Moshe, Taniguchi, Tadatsugu

“…Normally growing cells promptly cease DNA synthesis when exposed to genotoxic stresses, such as radiation, and this cell-cycle arrest prevents the accumulation…”
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Cellular commitment to oncogene-induced transformation or apoptosis is dependent on the transcription factor IRF-1 by Tanaka, N, Ishihara, M, Kitagawa, M, Harada, H, Kimura, T, Matsuyama, T, Lamphier, M S, Aizawa, S, Mak, T W, Taniguchi, T

“…The transcriptional activator interferon regulatory factor 1 (IRF-1) and its antagonistic repressor IRF-2 are regulators of the interferon (IFN) system and of…”
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IRF-1: the transcription factor linking the interferon response and oncogenesis by Taniguchi, Tadatsugu, Lamphier, Marc S, Tanaka, Nobuyuki

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An 8 Mb SRAM in 45 nm SOI Featuring a Two-Stage Sensing Scheme and Dynamic Power Management by Ramadurai, V., Pilo, H., Andersen, J., Braceras, G., Gabric, J., Geise, D., Lamphier, S., Yue Tan

“…This paper describes an 8 Mb SRAM test chip that has been designed and fabricated in a 45 nm Silicon-On-Insulator (SOI) CMOS technology. The test chip…”
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Type I interferons are essential mediators of apoptotic death in virally infected cells by Tanaka, Nobuyuki, Sato, Mitsuharu, Lamphier, Marc S., Nozawa, Hiroaki, Oda, Eri, Noguchi, Shigeru, Schreiber, Robert D., Tsujimoto, Yoshihide, Taniguchi, Tadatsugu

“…Background The interferons (IFNs) have been extensively studied in the context of host defence against viral infection. In the established model of IFN action,…”
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A 5.6-ns random cycle 144-Mb DRAM with 1.4 Gb/s/pin and DDR3-SRAM interface by Pilo, H., Anand, D., Barth, J., Burns, S., Corson, P., Covino, J., Lamphier, S.

“…This paper describes a 144-Mb DRAM that operates at a random cycle of 5.6 ns and is capable of producing data rates of 1.4 Gb/s/pin. The 121-mm/sup 2/ die is…”
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A 64Mb SRAM in 22nm SOI technology featuring fine-granularity power gating and low-energy power-supply-partition techniques for 37% leakage reduction by Pilo, H., Adams, C. A., Arsovski, I., Houle, R. M., Lamphier, S. M., Lee, M. M., Pavlik, F. M., Sambatur, S. N., Seferagic, A., Wu, R., Younus, M. I.

“…A 64Mb SRAM is fabricated in a 22nm high-performance SOI technology [1]. The ever-increasing integration needs of complex SoC are driving the reduction of SRAM…”
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The oncogenic transcription factor IRF-2 possesses a transcriptional repression and a latent activation domain by Yamamoto, H, Lamphier, M S, Fujita, T, Taniguchi, T, Harada, H

“…IRF-1 and IRF-2 are two structurally related transcription factors originally identified as regulators of the type I interferon (IFN) system. IRF-1 functions…”
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Multiple mechanisms mediate glucose repression of the yeast GAL1 gene by Lamphier, M.S. (Osaka University, Yamadaoka, Osaka, Japan), Ptashne, M

“…Several mechanisms contribute to the glucose repression of the GAL1 gene in Saccharomyces cerevisiae. We show that one mechanism involves the transcriptional…”
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DNA damage-induced apoptosis and ice gene induction in mitogenically activated T lymphocytes require IRF-1 by TAMURA, T, ISHIHARA, M, LAMPHIER, M. S, TANAKA, N, OISHI, I, AIZAWA, S, MATSUYAMA, T, MAK, T. W, TAKI, S, TANIGUCHI, T

“…Lymphocytes are highly sensitive to DNA damage-induced apoptosis. In thymocytes, the tumor suppressor p53 has been shown to be required for this type of…”
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An 833-MHz 1.5-W 18-Mb CMOS SRAM with 1.67 Gb/s/pin by Pilo, H., Allen, A., Covino, J., Hansen, P.R., Lamphier, S., Murphy, C., Traver, T., Yee, P.

“…This paper describes an 833-MHz 18-Mb CMOS SRAM with a 1.67-Gb/s/pin data rate. Issues that had to be overcome from previous-generation SRAMs to meet the…”
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Simulations of ceria nanoparticles by Cormack, A. N., Lamphier, S., Wang, Bu, Gubb, T., Reed, K.

“…Atomistic computer simulations, using classical potential models, have been used to model ceria nanoparticles (NPs) with diameters of approximately 1 and 2 nm…”
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An 833MHz 1.5W 18Mb CMOS SRAM with 1.67Gb/s/pin by Pilo, H, Allen, A, Covino, J, Hansen, P, Lamphier, S, Murphy, C, Traver, T, Yee, P

“…An 18 Mb complementary metal oxide semiconductor (CMOS) static random access memory (SRAM) operating at 833MHz was studied. The SRAM was fabricated in a 0.18…”
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Simulations of ceria nanoparticles by Cormack, A. N., Lamphier, S., Wang, Bu, Gubb, T., Reed, K.

“…Atomistic computer simulations, using classical potential models, have been used to model ceria nanoparticles (NPs) with diameters of approximately 1 and 2nm…”
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A 64 Mb SRAM in 32 nm High-k Metal-Gate SOI Technology With 0.7 V Operation Enabled by Stability, Write-Ability and Read-Ability Enhancements by Pilo, H., Arsovski, I., Batson, K., Braceras, G., Gabric, J., Houle, R., Lamphier, S., Radens, C., Seferagic, A.

“…A 64 Mb SRAM macro has been fabricated in a 32 nm high-k metal-gate SOI technology. The SRAM features a 0.154 μm 2 bit-cell, the smallest to date for a 32 nm…”
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