Search Results - "LAMONT, M. G"

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  1. 1

    Discrete plasmons in finite semiconductor multilayers by PINCZUK, A, LAMONT, M. G, GOSSARD, A. C

    Published in Physical review letters (12-05-1986)
    “…The paper reports the observation of discrete plasmons in layered two- dimensional electron gases with a large, but finite, number of periods. The twofold…”
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  2. 2

    Use of tertiarybutylarsine in the metalorganic chemical vapor deposition growth of GaAs by LUM, R. M, KLINGERT, J. K, LAMONT, M. G

    Published in Applied physics letters (02-02-1987)
    “…Epitaxial films of GaAs have been grown by metalorganic chemical vapor deposition using a new arsenic source, tertiarybutylarsine (TBAs). Films with excellent…”
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  3. 3

    Proximal colonic response and gastrointestinal transit after high and low fat meals by STEED, K. P, BOHEMEN, E. K, LAMONT, G. M, EVANS, D. F, WILSON, C. G, SPILLER, R. C

    Published in Digestive diseases and sciences (01-10-1993)
    “…The fat component of meals has been thought to make a major contribution to the colonic response to feeding. We have combined gamma scintigraphy and…”
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  4. 4

    Laser-assisted metalorganic molecular beam epitaxy of GaAs by DONNELLY, V. M, TU, C. W, BEGGY, J. C, MCCRARY, V. R, LAMONT, M. G, HARRIS, T. D, BAIOCCHI, F. A, FARROW, R. C

    Published in Applied physics letters (28-03-1988)
    “…We report preliminary studies of the growth of homoepitaxial GaAs by laser-assisted metalorganic molecular beam epitaxy, using triethylgallium (TEGa) and As4…”
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  5. 5

    Investigation of triethylarsenic as a replacement for arsine in the metalorganic chemical vapor deposition of GaAs by LUM, R. M, KLINGERT, J. K, WYNN, A. S, LAMONT, M. G

    Published in Applied physics letters (02-05-1988)
    “…GaAs growth experiments have been performed with triethylarsenic (TEAs) to investigate its potential as a replacement for arsine, and to compare the effects on…”
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  6. 6

    Improvements in the heteroepitaxy of GaAs on Si by LUM, R. M, KLINGERT, J. K, DAVIDSON, B. A, LAMONT, M. G

    Published in Applied physics letters (06-07-1987)
    “…Successful application of GaAs on Si heteroepitaxy to majority-carrier device fabrication has recently been demonstrated. However, the quality of the GaAs…”
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    Photoluminescence studies of heteroepitaxial GaAs on Si by WILSON, B. A, BONNER, C. E, KLINGERT, J. K, MILLER, R. C, SPUTZ, S. K, HARRIS, T. D, LAMONT, M. G, DUPUIS, R. D, VERNON, S. M, HAVEN, V. E, LUM, R. M

    Published in Journal of electronic materials (01-03-1988)
    “…The authors present a systematic study of the photoluminescence of undoped GaAs layers deposited by MOCVD on Si substrates. The study includes an examination…”
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  9. 9

    Laser-modified molecular beam epitaxial growth of (Al)GaAs on GaAs and (Ca,Sr)F2/GaAs substrates by TU, C. W, DONNELLY, V. M, BEGGY, J. C, BAIOCCHI, F. A, MCCRARY, V. R, HARRIS, T. D, LAMONT, M. G

    Published in Applied physics letters (21-03-1988)
    “…We report results on the effect of a 193 nm ArF excimer laser on molecular beam epitaxial growth of (Al)GaAs on GaAs substrates and GaAs on lattice-matched…”
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    Compartment Syndrome Due to Massive Leg Hematoma After Primary Total Hip Arthroplasty by Hannon, Michael G., MD, Lamont, Justin G., MD

    Published in The Journal of arthroplasty (01-08-2012)
    “…Abstract Fondaparinux is an accepted form of deep venous thrombosis prophylaxis after hip arthroplasty. Cited advantages of its use include once-daily…”
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