Search Results - "LADERMAN, S. S"

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    Single source metalorganic chemical vapor deposition of low microwave surface resistance YBa2Cu3O7 by HISKES, R, DICAROLIS, S. A, YOUNG, J. L, LADERMAN, S. S, JACOWITZ, R. D, TABER, R. C

    Published in Applied physics letters (29-07-1991)
    “…YBa2Cu3O7 films 2000–7500 Å thick were deposited onto [100] LaAlO3 substrates using a novel single source metalorganic chemical vapor deposition technique. We…”
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    Epitaxial and Smooth Films of a-Axis YBa2Cu3O7 by Eom, C B, Marshall, A F, Laderman, S S, Jacowitz, R D, Geballe, T H

    “…YBa(2)Cu(3)O(7) films have been grown epitaxially on SrTiO(3) (100) and LaAlO(3) (100) substrates with nearly pure a-axis orientation and with transition…”
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    Surface resistance of epitaxial YBa2Cu3O7 thin films on CeO2 diffusion barriers on sapphire by MERCHANT, P, JACOWITZ, R. D, TIBBS, K, TABER, R. C, LADERMAN, S. S

    Published in Applied physics letters (10-02-1992)
    “…Epitaxial thin films of YBa2Cu3O7 (YBCO) have been deposited by off-axis sputtering onto substrates of r-plane sapphire coated with a CeO2 diffusion barrier…”
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    Microwave surface resistance of epitaxial YBa2Cu3O7 thin films on sapphire by CHAR, K, NEWMAN, N, GARRISON, S. M, BARTON, R. W, TABER, R. C, LADERMAN, S. S, JACOWITZ, R. D

    Published in Applied physics letters (23-07-1990)
    “…Microwave surface resistance data were measured on pairs of YBa2Cu3O7 thin films on Al2O3 {11_02} substrates by a parallel plate resonator technique. The…”
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    Properties of epitaxial YBa2Cu3O7 thin films on Al2O3 {1̄012} by Char, K., Fork, D. K., Geballe, T. H., Laderman, S. S., Taber, R. C., Jacowitz, R. D., Bridges, F., Connell, G. A. N., Boyce, J. B.

    Published in Applied physics letters (19-02-1990)
    “…Epitaxial YBa2Cu3O7 films were grown on Al2O3 {1̄012} by a laser ablation technique. X-ray diffraction shows that films are epitaxial with the c axis…”
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    A-axis-oriented YBa2Cu3O7/PrBa2Cu3O7 superlattices by EOM, C. B, MARSHALL, A. F, TRISCONE, J.-M, WILKENS, B, LADERMAN, S. S, GERBALLE, T. H

    “…A modulated structure has been fabricated from high transition temperature superconductors where the individual CuO(2) planes are composed of alternating…”
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    Microstructural interaction of Y2Ba4Cu8O16 stacking faults within YBa2Cu3O7−x by Marshall, A. F., Char, K., Barton, R. W., Kapitulnik, A., Laderman, S. S.

    Published in Journal of materials research (01-10-1990)
    “…A transmission electron microscopy study of a post-annealed YBa2Cu3O7−x thin film shows that extra Cu–O planes within the structure can aggregate as stacking…”
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    Double-diffused graded SiGe-base bipolar transistors by Vook, D., Kamins, T.I., Burton, G., Vande Voorde, P.J., Wang, H.-H., Coen, R., Lin, J., Pettengill, D.F., Yu, P.-K., Rosner, S.J., Turner, J.E., Laderman, S.S., Horng-Sen Fu, Wang, A.S.

    Published in IEEE transactions on electron devices (01-06-1994)
    “…Self-aligned SiGe/Si bipolar transistors have been fabricated using a single-polysilicon, double-diffused process with the base in a graded SiGe layer to…”
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    Microscopic identification of defects propagating through the center of silicon and indium-doped liquid encapsulated Czochralski grown GaAs using x-ray topography by SCOTT, M. P, LADERMAN, S. S, ELLIOT, A. G

    Published in Applied physics letters (01-01-1985)
    “…Extended defects in 3×1018 cm−3 Si-doped and 2×1019 cm−3 In-doped GaAs grown by the liquid encapsulated Czochralski technique are investigated using x-ray…”
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    USING COUNTY-BASED MARKETS TO SUPPORT AND FEDERAL RESERVE MARKETS TO IMPLEMENT BANK MERGER POLICY by Laderman, Elizabeth S., Pilloff, Steven J.

    Published in Journal of competition law & economics (01-03-2007)
    “…Abstract In this paper, we consider three issues raised by the apparent inconsistency between the current research practice of using county-based markets…”
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    Electrical and material quality of Si1-xGex/Si p-N heterojunctions produced by limited reaction processing by KING, C. A, HOYT, J. L, NOBLE, D. B, GRONET, C. M, GIBBONS, J. F, SCOTT, M. P, KAMINS, T. I, LADERMAN, S. S

    Published in IEEE electron device letters (01-04-1989)
    “…Si1-xGex/Si p-N heterojunctions prepared by a chemical vapor deposition technique, limited reaction processing (LRP) were characterized using DC electrical…”
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    Growth and characterization of AlGaAs/InGaAs/GaAs pseudomorphic structures by Fischer‐Colbrie, A., Miller, J. N., Laderman, S. S., Rosner, S. J., Hull, R.

    “…We have grown pseudomorphic modulation‐doped Al y Ga1−y As (0.25≤y≤0.30)/In x Ga1−x As (x≤0.50) on GaAs structures by molecular‐beam epitaxy and obtained…”
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