Search Results - "LA ROCHE, J. R"

GaN PN junction issues and developments by Hickman, R, Van Hove, J.M, Chow, P.P, Klaassen, J.J, Wowchak, A.M, Polley, C.J, King, D.J, Ren, F, Abernathy, C.R, Pearton, S.J, Jung, K.B, Cho, H, La Roche, J.R

“…Critical nitride-based p- n junction issues relating to wide bandgap bipolar device performance include minority carrier lifetime, defect related current…”
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Soil-borne polycyclic aromatic hydrocarbons in El Paso, Texas: Analysis of a potential problem in the United States/Mexico border region by De La Torre-Roche, Roberto J., Lee, Wen-Yee, Campos-Díaz, Sandra I.

“…Ultrasonic extraction followed by Stir Bar Sorptive Extraction (SBSE) and thermal desorption inline coupled with Gas Chromatography and Mass Spectrometry…”
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Properties of Ir-based Ohmic contacts to AlGaN/GaN high electron mobility transistors by Fitch, R. C., Gillespie, J. K., Moser, N., Jenkins, T., Sewell, J., Via, D., Crespo, A., Dabiran, A. M., Chow, P. P., Osinsky, A., La Roche, J. R., Ren, F., Pearton, S. J.

“…Measurement of the electrical characteristics of 250 devices on the same 2 in. diameter wafer shows that Ti/Al/Ir/Au Ohmic contacts on AlGaN/GaN high electron…”
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UV photoresponse of single ZnO nanowires by HEO, Y. W, KANG, B. S, TIEN, L. C, NORTON, D. P, REN, F, LA ROCHE, J. R, PEARTON, S. J

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Annealing temperature stability of Ir and Ni-based Ohmic contacts on Al Ga N ∕ Ga N high electron mobility transistors by Kang, B. S., Kim, S., La Roche, J. R., Ren, F., Fitch, R. C., Gillespie, J. K., Moser, N., Jenkins, T., Sewell, J., Via, D., Crespo, A., Dabiran, A. M., Chow, P. P., Osinsky, A., Pearton, S. J.

“…Ti ∕ Al ∕ Ir ∕ Au Ohmic contacts on Al Ga N ∕ Ga N high electron mobility transistors (HEMTs) show promising electrical performance, with lower specific…”
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Comparison of Ir and Ni-based Ohmic contacts for AlGaN/GaN high electron mobility transistors by Fitch, R. C., Gillespie, J. K., Moser, N., Jessen, G., Jenkins, T., Dettmer, R., Via, D., Crespo, A., Dabiran, A. M., Chow, P. P., Osinsky, A., La Roche, J. R., Ren, F., Pearton, S. J.

“…A direct comparison of Ti/Al/Ir/Au Ohmic contacts on AlGaN/GaN high electron mobility transistors with the more conventional Ti/Al/Ni/Au metallization is…”
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