Effect of stresses on the diffusion of impurities in the process of laser solid-phase alloying of silicon

Effect of stresses on the diffusion of impurities in the process of laser solid-phase alloying of silicon

We describe some results of experimental and theoretical investigations of diffusion of impurities into single-crystal silicon wafers under the action of laser infrared radiation and the effect of stresses on this process. We consider laser heating of a wafer by means of the irradiation of its entir...

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Bibliographic Details
Published in:Materials science (New York, N.Y.) Vol. 36; no. 3; pp. 333 - 339
Main Authors: Bonchyk, O. Yu, Kyyak, S. H., Pokhmurs’ka, H. V., Fl’orko, O. V., Chekurin, V. F.
Format: Journal Article
Language:English
Published: New York Springer Nature B.V 01-05-2000
Subjects:
Alloying
Concentration gradient
Crystal lattices
Diffusion layers
Impurities
Infrared heating
Infrared lasers
Infrared radiation
Laser beam heating
Lasers
Mathematical models
Power
Residual stress
Silicon
Silicon wafers
Single crystals
Solid phases
Strain
Yield point
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Summary:We describe some results of experimental and theoretical investigations of diffusion of impurities into single-crystal silicon wafers under the action of laser infrared radiation and the effect of stresses on this process. We consider laser heating of a wafer by means of the irradiation of its entire surface with a uniform beam or scanning of the surface with a narrow beam. In the second case, temperature stresses attain the yield point of the material, which is corroborated by significant distortions of its crystal lattice and by residual stresses. We propose a mathematical model for the description of mechanothermo-diffusion processes, which well fits the shape of experimental diffusion curves. Our investigations have shown some ways of purposefully influencing the properties of diffusion layers, in particular, their concentration profile. If, in the course of alloying, one creates elastic strain varying across the thickness, it becomes possible, depending on the sign of the strain gradient, to bring the maximum of the concentration curve nearer to the wafer surface or to remove this maximum from it.
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ISSN:1068-820X
1573-885X
DOI:10.1007/BF02769594