Search Results - "Kyu-Jeong Choi"

Scaling Benefits for Active and Gate Insulator of Vertical Channel Thin-Film Transistors Using Atomic Layer Deposited InGaZnO Channel by Lee, Dong-Hee, Kwon, Young-Ha, Seong, Nak-Jin, Choi, Kyu-Jeong, Yang, Jong-Heon, Hwang, Chi-Sun, Yoon, Sung-Min

“…In-Ga-Zn-O (IGZO) vertical-channel thin-film transistors (VTFTs) were fabricated with thickness scaling of the channel (<inline-formula> <tex-math…”
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Performance Enhancement of Self-Aligned Coplanar TFTs with ALD-IGZO Channels via Effective Doping from Interlayer Dielectric by Moon, Seo-Hyun, Kwon, Young-Ha, Seong, Nak-Jin, Choi, Kyu-Jeong, Yoon, Sung-Min

“…A doping technique to form the conductive source/drain regions of self-aligned coplanar thin-film transistors (TFTs) employing In-Ga-Zn-O (IGZO) channels…”
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Device Feasibility of 60-nm-Scaled Vertical-Channel Memory Transistors Using InGaZnO Channel and ZnO Charge-Trap Layers by Cho, Yun-Ju, Kwon, Young-Ha, Seong, Nak-Jin, Choi, Kyu-Jeong, Kim, Hee-Ok, Yang, Jong-Heon, Hwang, Chi-Sun, Yoon, Sung-Min

“…A 60-nm channel length vertical-channel charge-trap memory (V-CTM) using oxide semiconductor channel was demonstrated for advanced memory applications…”
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Improvement in Short-Channel Effects of the Thin-Film Transistors Using Atomic-Layer Deposited In-Ga-Sn-O Channels With Various Channel Compositions by Noh, Shin-Ho, Kim, Hyo-Eun, Yang, Jong-Heon, Kim, Yong-Hae, Kwon, Young-Ha, Seong, Nak-Jin, Hwang, Chi-Sun, Choi, Kyu-Jeong, Yoon, Sung-Min

“…In-Ga-Sn-O (IGTO) thin-film transistors (TFTs) were fabricated with channel lengths from <inline-formula> <tex-math notation="LaTeX">3 \mu \text{m}…”
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Geometrical and Structural Design Schemes for Trench-Shaped Vertical Channel Transistors Using Atomic-Layer Deposited In-Ga-Zn-O by Ahn, Hyun-Min, Moon, Seo-Hyun, Kwon, Young-Ha, Seong, Nak-Jin, Choi, Kyu-Jeong, Hwang, Chi-Sun, Yang, Jong-Heon, Kim, Yong-Hae, Yoon, Sung-Min

“…Trench-structured In-Ga-Zn-O vertical thin-film transistors (T-VTFT) was fabricated with a channel length of 400 nm. T-VTFTs showed channel width-dependent…”
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Impact of Strategic Approaches for Improving the Device Performance of Mesa-shaped Nanoscale Vertical-Channel Thin-Film Transistors Using Atomic-Layer Deposited In–Ga–Zn–O Channel Layers by Ahn, Hyun-Min, Kwon, Young-Ha, Seong, Nak-Jin, Choi, Kyu-Jeong, Hwang, Chi-Sun, Yoon, Sung-Min

“…The effect of two strategic approaches, such as modification of active layer geometry and control of active channel composition, were investigated to improve…”
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Insights on Asymmetrical Electrode Geometric Effect to Enhance Gate-Drain-Bias Stability of Vertical-Channel InGaZnO Thin-Film Transistor by Lee, Dong-Hee, Kwon, Young-Ha, Seong, Nak-Jin, Choi, Kyu-Jeong, Yang, Jong-Heon, Hwang, Chi-Sun, Yoon, Sung-Min

“…The asymmetrical gate-drain bias stress (GDBS) stability of a mesa-shaped vertical-channel thin-film transistors (VTFTs) was investigated using an In-Ga-Zn–O…”
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Thermomechanical properties and mechanical stresses of Ge2Sb2Te5 films in phase-change random access memory by PARK, Il-Mok, JUNG, Jung-Kyu, RYU, Sang-Ouk, CHOI, Kyu-Jeong, YU, Byoung-Gon, PARK, Young-Bae, SEUNG MIN HAN, JOO, Young-Chang

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Sb-Se-based phase-change memory device with lower power and higher speed operations by Sung-Min Yoon, Nam-Yeal Lee, Sang-Ouk Ryu, Kyu-Jeong Choi, Park, Y.-S., Seung-Yun Lee, Byoung-Gon Yu, Myung-Jin Kang, Se-Young Choi, Wuttig, M.

“…A phase-change material of Sb/sub 65/Se/sub 35/ was newly proposed for the nonvolatile memory applications. The fabricated phase-change memory device using…”
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The effect of antimony-doping on Ge2Sb2Te5, a phase change material by CHOI, Kyu-Jeong, YOON, Sung-Min, LEE, Nam-Yeal, LEE, Seung-Yun, PARK, Young-Sam, YU, Byoung-Gon, RYU, Sang-Ouk

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Polycrystalline silicon-germanium heating layer for phase-change memory applications by Lee, Seung-Yun, Choi, Kyu-Jeong, Ryu, Sang-Ouk, Yoon, Sung-Min, Lee, Nam-Yeal, Park, Young-Sam, Kim, Sang-Hoon, Lee, Sang-Heung, Yu, Byoung-Gon

“…This letter reports on the performance improvement of phase-change memory (PCM) cells by applying silicon-germanium (SiGe) alloys as resistive heating layers…”
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Weighted-Sum Operation of Three-Terminal Synapse Transistors in Array Configuration Using Spin-Coated Li-Doped ZrO2 Electrolyte Gate Insulator by Kim, Dong-Hee, Kwon, Young-Ha, Seong, Nak-Jin, Choi, Kyu-Jeong, Yoon, Sung-Min

“…Artificial synapses with ideal functionalities are essential in hardware neural networks to allow for energy-efficient analog computing. Electrolyte-gated…”
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Synergic strategies of composition-modified bilayer channel configuration and ozone-processed gate stacks for atomic-layer deposited In-Ga-Zn-O thin-film transistors by Bae, Soo-Hyun, Moon, Seo-Hyun, Kwon, Young Ha, Nak-Jin-Seong, Choi, Kyu-Jeong, Yoon, Sung-Min

“…Composition-modified bilayer channel configuration was introduced for enhancing the device performance of In-Ga-Zn-O (IGZO) thin film transistors (TFTs), which…”
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Roles of Oxygen Interstitial Defects in Atomic-Layer Deposited InGaZnO Thin Films with Controlling the Cationic Compositions and Gate-Stack Processes for the Devices with Subμm Channel Lengths by Bae, Soo-Hyun, Yang, Jong-Heon, Kim, Yong-Hae, Kwon, Young Ha, Seong, Nak-Jin, Choi, Kyu-Jeong, Hwang, Chi-Sun, Yoon, Sung-Min

“…Roles of oxygen interstitial defects located in the In–Ga–Zn-O (IGZO) thin films prepared by atomic layer deposition were investigated with controlling the…”
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Combination of InZnO/InGaZnO Bi-layered channels prepared by atomic layer deposition and ozone-based gate-stack formation for guaranteeing high field-effect mobility and long-term stability of thin film transistors by Moon, Seo-Hyun, Bae, Soo-Hyun, Kwon, Young-Ha, Seong, Nak-Jin, Choi, Kyu-Jeong, Yoon, Sung-Min

“…Bi-layered channel structures comprising In–Zn–O (IZO) prompt and In–Ga–Zn-O (IGZO) prime layers were introduced to enhance the carrier mobility of oxide thin…”
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Impact of Al2O3 spacers on the improvement in short-channel effects for the mesa-shaped vertical-channel In-Ga-Zn-O thin-film transistors with a channel length below 100 nm by Oh, Chae-Eun, Kwon, Young-Ha, Seong, Nak-Jin, Choi, Kyu-Jeong, Yoon, Sung-Min

“…To achieve a channel length scaling and an improvement in short-channel effect (SCE) for the mesa-shaped vertical thin-film transistors (VTFTs) using…”
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Impact of channel thickness on device scaling in vertical InGaZnO channel charge-trap memory transistors with ALD Al2O3 tunneling layer by Cho, Yun-Ju, Kwon, Young-Ha, Seong, Nak-Jin, Choi, Kyu-Jeong, Hwang, Chi-Sun, Yoon, Sung-Min

“…This study investigates the impact of channel thickness (TCH) variation on memory performance and its physical origins in vertical channel charge trap memory…”
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Ferroelectric YMnO3 thin films grown by metal-organic chemical vapor deposition for metal/ferroelectric/semiconductor field-effect transistors by CHOI, Kyu-Jeong, SHIN, Woong-Chul, YOON, Soon-Gil

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Analysis on Contact Resistance and Effective Channel Length of Thin Film Transistors Using Composition-Modified In–Ga–Zn‑O Active Channels Prepared with Atomic Layer Deposition and Various Electrode Materials by Lee, Dong-Hee, Kwon, Young-Ha, Seong, Nak-Jin, Choi, Kyu-Jeong, Kim, Gyungtae, Yoon, Sung-Min

“…To verify the effects of process conditions for the TFTs employing In–Ga–Zn-O (IGZO) channels prepared by atomic layer deposition (ALD), such as cationic…”
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Optical and electrical properties of transparent conducting gallium-doped ZnO electrodes prepared by atomic layer deposition for application in organic solar cells by Song, Yoon Seog, Seong, Nak Jin, Choi, Kyu Jeong, Ryu, Sang Ouk

“…Transparent and conducting gallium-doped ZnO electrodes were fabricated by means of atomic layer deposition. The electrode showed the lowest resistivity of…”
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