Search Results - "Kyu-Heon Cho"
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Increase of Breakdown Voltage on AlGaN/GaN HEMTs by Employing Proton Implantation
Published in IEEE transactions on electron devices (01-03-2009)“…The breakdown voltage of new AlGaN/GaN high electron mobility transistors (HEMTs) was increased considerably without sacrificing any other electrical…”
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Journal Article -
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Interdigitated LDMOS
Published in 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD) (01-05-2013)“…Novel Interdigitated LDMOS is experimented resulting in best in class R SP -BV DSS performance (21.8mΩ-mm 2 with BV DSS of 47V) in comparison to published…”
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Conference Proceeding
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3
New Power MOSFET Employing Segmented Trench Body Contact for Improving the Avalanche Energy
Published in 2008 20th International Symposium on Power Semiconductor Devices and IC's (01-05-2008)“…We have fabricated the 60 V power MOSFET employing the segmented trench body contact which results in low conduction loss and high avalanche energy (EAS) under…”
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Conference Proceeding -
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High Breakdown Voltage AlGaN/GaN HEMTs by Employing Proton Implantation
Published in 2008 20th International Symposium on Power Semiconductor Devices and IC's (01-05-2008)“…The breakdown voltage of AlGaN/GaN high electron mobility transistors (HEMTs) was increased considerably without sacrificing any other electrical…”
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Conference Proceeding -
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Design of AlGaN/GaN HEMTs employing mesa field plate for breakdown voltage enhancement
Published in Solid-state electronics (01-04-2010)“…We proposed the AlGaN/GaN high electron mobility transistors (HEMTs) employing the mesa field plate and carried out the detailed numerical simulation of device…”
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Journal Article -
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A New Soft Self-Clamping Scheme for Improving the Self-Clamped Inductive Switching (SCIS) Capability of Automotive Ignition IGBT
Published in Proceedings of the 19th International Symposium on Power Semiconductor Devices and IC's (01-05-2007)“…The improvement of self-clamped inductive switching (SCIS) capability of ignition IGBT widely used in automotive coil driver ensures the protection of the…”
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Conference Proceeding -
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High breakdown voltage AlGaN/GaN HEMTs employing fluoride plasma treatment
Published in Physica scripta (01-12-2008)Get full text
Journal Article -
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Channel modulated AlGaN/GaN HEMTs employing fluoride plasma treatment
Published in 2008 IEEE Power Electronics Specialists Conference (01-06-2008)“…We proposed channel modulated AlGaN/GaN high electron mobility transistors (HEMTs) employing fluoride plasma treatment and carried out the detailed numerical…”
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Conference Proceeding -
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AlGaN/GaN high-electron-mobility transistor(HEMT) employing Schottky contact on the unetched region and the silicon dioxide passivation
Published in 2008 IEEE Power Electronics Specialists Conference (01-06-2008)“…AlGaN/GaN high-electron-mobility transistors (HEMTs) which have the Schottky contact only formed on the unetched region and the SiO 2 passivation using an…”
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Conference Proceeding -
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New voltage sensing terminal of the IGBT for the short-circuit protection with suppressed floating effect by employing the internal PMOS
Published in 2008 IEEE Power Electronics Specialists Conference (01-06-2008)“…We have proposed a new floating p-well voltage reset scheme for reliable and fast discharging voltage sensing terminal by employing the negative gate bias,…”
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Conference Proceeding -
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1.4 kV AlGaN/GaN HEMTs employing As+ ion implantation on SiO2 passivation layer
Published in 2008 IEEE Power Electronics Specialists Conference (01-06-2008)“…We proposed As+ ion implantation on SiO 2 passivation layer of AlGaN/GaN HEMTs to improve the forward and reverse electric characteristics of AlGaN/GaN HEMTs…”
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Conference Proceeding -
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AlGaN/GaN HEMT without Schottky contact on the dry-etched region for high breakdown voltage
Published in 2007 International Semiconductor Device Research Symposium (01-12-2007)“…The purpose of our work is to propose and fabricate a new AlGaN/GaN HEMT without Schottky contact on the dry-etched region to decrease leakage current and to…”
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Conference Proceeding -
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High voltage AlGaN/GaN Schottky barrier diode employing the inductively coupled plasma-chemical vapor deposition SiO2 passivation
Published in 2007 7th Internatonal Conference on Power Electronics (01-10-2007)“…The SiO 2 passivation using the inductively coupled plasma-chemical vapor deposition(ICP-CVD) was proposed for the high voltage AlGaN/GaN Schottky barrier…”
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Conference Proceeding