Search Results - "Kyong-Taek Lee"

Low-Frequency Noise After Channel Soft Oxide Breakdown in HfLaSiO Gate Dielectric by Hyun-Sik Choi, Seung-Ho Hong, Rock-Hyun Baek, Kyong-Taek Lee, Chang-Yong Kang, Jammy, R., Byoung-Hun Lee, Sung-Woo Jung, Yoon-Ha Jeong

“…Low-frequency noise (LFN) after channel soft oxide breakdown (SBD) of n-MOSFETs with a HfLaSiO gate dielectric and TaN metal gate shows a Lorentzian-like…”
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Technology scaling on High-K & Metal-Gate FinFET BTI reliability by Kyong Taek Lee, Wonchang Kang, Eun-Ae Chung, Gunrae Kim, Hyewon Shim, Hyunwoo Lee, Hyejin Kim, Minhyeok Choe, Nae-In Lee, Patel, Anuj, Junekyun Park, Jongwoo Park

“…High-K (HK) & Metal-Gate (MG) transistor technology have become a mainstream for the logic & SOC processes. On HK/MG process, bias-temp instability (BTI) poses…”
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Extraction of Effective Mobility from nMOSFETs With Leaky Gate Dielectric Using Time Domain Reflectometry by Yonghun Kim, Young Gon Lee, Ukjin Jung, Jin Ju Kim, Minhyeok Choe, Kyong Taek Lee, Sangwoo Pae, Jongwoo Park, Byoung Hun Lee

“…The effective mobility (μ eff ) of MOSFETs with ultrathin high-k gate dielectric (EOT = 0.85 nm) has been successfully extracted using a time domain…”
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PBTI-Associated High-Temperature Hot Carrier Degradation of nMOSFETs With Metal-Gate/High- k Dielectrics by Kyong Taek Lee, Chang Yong Kang, Ook Sang Yoo, Rino Choi, Byoung Hun Lee, Lee, J.C., Hi-Deok Lee, Yoon-Ha Jeong

“…Due to the increased physical dielectric thickness and reduced gate leakage in metal-gate/high-k devices, degradation caused by channel hot carriers (HCs)…”
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RF and hot carrier effects in metal gate/high-k dielectric nMOSFETs at cryogenic temperature by Hyun Chul Sagong, Kyong Taek Lee, Seung-Ho Hong, Hyun-Sik Choi, Gil-Bok Choi, Rock-Hyun Baek, Seung-Hyun Song, Min-Sang Park, Jae Chul Kim, Yoon-Ha Jeong, Sung-Woo Jung, Chang Yong Kang

“…We investigate RF performances and hot carrier effects of nMOSFETs at cryogenic temperature. RF performances of HfO 2 dielectric nMOSFET at 77 K are improved…”
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Interfacial-Layer-Driven Dielectric Degradation and Breakdown of HfSiON/SiON Gate Dielectric nMOSFETs by CHOI, Do-Young, KYONG TAEK LEE, BAEK, Chang-Ki, CHANG WOO SOHN, HYUN CHUL SAGONG, JUNG, Eui-Young, LEE, Jeong-Soo, JEONG, Yoon-Ha

“…This letter describes the dielectric degradation and breakdown characteristics of HfSiON/SiON gate dielectric nMOSFETs using the stress-induced leakage current…”
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Reliability of HFO2/SIO2 dielectric with strain engineering using CESL stressor by Jae Chul Kim, Kyong Taek Lee, Seung Hyun Song, Min Sang Park, Seung Ho Hong, Gil Bok Choi, Hyun Sik Choi, Rock Hyun Baek, Hyun Chul Sagong, Yoon-Ha Jeong, Sung Woo Jung, Chang Young Kang

“…We have investigated reliability characteristics for a high-k/metal gate MOSFET with strain engineering under constant voltage stress (CVS). Using contact edge…”
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New observations on the random telegraph noise induced Vth variation in nano-scale MOSFETs by Changze Liu, Kyong Taek Lee, Hyunwoo Lee, Yoohwan Kim, Sangwoo Pae, Jongwoo Park

“…In this paper, random telegraph noise (RTN) induced ΔV th variation under the worst bias condition is experimentally investigated. The results show that ΔV th…”
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Reliability study of methods to suppress boron transient enhanced diffusion in high-k/metal gate Si/SiGe channel pMOSFETs by Park, Min Sang, Kim, Yonghyun, Lee, Kyong Taek, Kang, Chang Yong, Min, Byoung-Gi, Oh, Jungwoo, Majhi, Prashant, Tseng, Hsing-Huang, Lee, Jack C., Banerjee, Sanjay K., Lee, Jeong-Soo, Jammy, Raj, Jeong, Yoon-Ha

“…The effects of extension profile engineering to suppress boron transient enhanced diffusion (TED) are investigated in Si/SiGe channel metal–oxide–semiconductor…”
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A Study of Strain Engineering Using CESL Stressor on Reliability Comparing Effect of Intrinsic Mechanical Stress by Kyong Taek Lee, Chang Yong Kang, Min-Sang Park, Byoung Hun Lee, Ho Kyung Park, Hyun Sang Hwang, Hsing-Huang Tseng, Jammy, R., Yoon-Ha Jeong

“…The effects of a stressor nitride layer on device performance and reliability are investigated. To decouple intrinsic mechanical stress and process-related…”
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Frequency dependent TDDB behaviors and its reliability qualification in 32nm high-k/metal gate CMOSFETs by Kyong Taek Lee, Jongik Nam, Minjung Jin, Kidan Bae, Junekyun Park, Lira Hwang, Jungin Kim, Hyunjin Kim, Jongwoo Park

“…The TDDB failure mechanism of high-k dielectric/metal gate (HK/MG) CMOSFETs on DC and AC stress conditions are investigated in comparison to poly-Si/SiON. All…”
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A comparative study of depth profiling of interface states using charge pumping and low frequency noise measurement in SiO2/HfO2 gate stack nMOSFETs by KYONG TAEK LEE, CHANG YONG KANG, BYOUNG HUN LEE, BERSUKER, Gennadi, TSENG, Hsing-Huang, JAMMY, Raj, JEONG, Yoon-Ha, CHOI, Hyun-Sik, HONG, Seung-Ho, CHOI, Gil-Bok, JAE CHUL KIM, SONG, Seung-Hyun, BAEK, Rock-Hyun, PARK, Min-Sang, HYUN CHUL SAGONG

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Gate stack process optimization for TDDB improvement in 28nm high-k/metal gate nMOSFETs by Kyong Taek Lee, Hyunjin Kim, Junekyun Park, Jongwoo Park

“…The effects of IL (interfacial layer) thickness and nitrogen concentration of high-k layer on TDDB are comprehensively investigated for HK/MG nMOSFETs…”
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The Effect of a Si Capping Layer on RF Characteristics of High- k /Metal Gate SiGe Channel pMOSFETs by Min Sang Park, Kyong Taek Lee, Chang Yong Kang, Gil-Bok Choi, Hyun Chul Sagong, Chang Woo Sohn, Byoung-Gi Min, Jungwoo Oh, Majhi, Prashant, Hsing-Huang Tseng, Lee, Jack C, Jeong-Soo Lee, Jammy, Raj, Yoon-Ha Jeong

“…We present a comparative study of the effects of a Si capping layer on SiGe channel pMOSFETs used for radio-frequency (RF) applications. In Si-capped devices,…”
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Effect of Si capping layer on the interface quality and NBTI of high mobility channel Ge-on-Si pMOSFETs by Yoo, Ook Sang, Oh, Jungwoo, Min, Kyung Seok, Kang, Chang Yong, Lee, B.H., Lee, Kyong Taek, Na, Min Ki, Kwon, Hyuk-Min, Majhi, P., Tseng, H-H, Jammy, Raj, Wang, J.S., Lee, Hi-Deok

“…The effects of a Si capping layer on the device characteristics and negative bias temperature instability (NBTI) reliability were investigated for Ge-on-Si…”
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Effects of In Situ O2 Plasma Treatment on OFF-State Leakage and Reliability in Metal-Gate/High-k Dielectric MOSFETs by KYONG TAEK LEE, CHANG YONG KANG, JEONG, Yoon-Ha, BYUNG SUN JU, CHOI, Rino, KYUNG SEOK MIN, OOK SANG YOO, BYOUNG HUN LEE, JAMMY, Raj, LEE, Jack C, LEE, Hi-Deok

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RF performance degradation in 100-nm metal gate/high-k dielectric nMOSFET by hot carrier effects by Hyun Chul Sagong, Kyong Taek Lee, Chang Yong Kang, Gil-Bok Choi, Hyun-Sik Choi, Rock-Hyun Baeka, Min-Sang Park, Sung-Woo Jung, Yoon-Ha Jeong

“…RF performances of 100-nm metal gate/high-k dielectric nMOSFET and parameters degradation by hot carrier injection to apply to RF integrated circuits are…”
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New observations on hot carrier induced dynamic variation in nano-scaled SiON/poly, HK/MG and FinFET devices based on on-the-fly HCI technique: The role of single trap induced degradation by Changze Liu, Kyong Taek Lee, Sangwoo Pae, Jongwoo Park

“…In this paper, HCI induced dynamic variation in nano-scaled MOSFETs is systematically studied. Based on the proposed on-the-fly HCI technique, individual…”
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A comparative study of reliability and performance of strain engineering using CESL stressor and mechanical strain by Kyong Taek Lee, Chang Yong Kang, Ook Sang Yoo, Chadwin, D., Bersuker, G., Ho Kyung Park, Jun Myung Lee, Hyung Sang Hwang, Byoung Hun Lee, Hi-Deok Lee, Yoon-Ha Jeong

“…Effects of a stressor nitride layer on device performance and reliability are investigated. To decouple intrinsic mechanical stress and process-related…”
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Test Structures for Accurate UHF C-V Measurements of Nano-Scale CMOSFETs with HfSiON and TiN Metal Gate by Kyong-Taek Lee, Schmitz, J., Brown, G.A., Dawei Heh, Rino Choi, Harris, R., Seung-Chul Song, Byoung Hun Lee, In-Shik Han, Hi-Deok Lee, Yoon-Ha Jeong

“…Test structures for accurate UHF capacitance-voltage (C-V) measurements of high performance CMOSFETs with Hf-based high-k dielectric and TiN metal gate are…”
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