Search Results - "Kwon, Dae Eun"

A Review of Three-Dimensional Resistive Switching Cross-Bar Array Memories from the Integration and Materials Property Points of View by Seok, Jun Yeong, Song, Seul Ji, Yoon, Jung Ho, Yoon, Kyung Jean, Park, Tae Hyung, Kwon, Dae Eun, Lim, Hyungkwang, Kim, Gun Hwan, Jeong, Doo Seok, Hwang, Cheol Seong

“…Issues in the circuitry, integration, and material properties of the two‐dimensional (2D) and three‐dimensional (3D) crossbar array (CBA)‐type resistance…”
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Highly Uniform, Electroforming-Free, and Self-Rectifying Resistive Memory in the Pt/Ta2O5/HfO2-x/TiN Structure by Yoon, Jung Ho, Song, Seul Ji, Yoo, Il-Hyuk, Seok, Jun Yeong, Yoon, Kyung Jean, Kwon, Dae Eun, Park, Tae Hyung, Hwang, Cheol Seong

“…The development of a resistance switching (RS) memory cell that contains rectification functionality in itself, highly reproducible RS performance, and…”
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Kernel Application of the Stacked Crossbar Array Composed of Self‐Rectifying Resistive Switching Memory for Convolutional Neural Networks by Kim, Yumin, Kim, Jihun, Kim, Seung Soo, Kwon, Young Jae, Kim, Gil Seop, Jeon, Jeong Woo, Kwon, Dae Eun, Yoon, Jung Ho, Hwang, Cheol Seong

“…Herein, a feasible method is provided for circuit implementation of the convolutional neural network (CNN) in neuromorphic hardware using the multiple…”
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Nociceptive Memristor by Kim, Yumin, Kwon, Young Jae, Kwon, Dae Eun, Yoon, Kyung Jean, Yoon, Jung Ho, Yoo, Sijung, Kim, Hae Jin, Park, Tae Hyung, Han, Jin‐Woo, Kim, Kyung Min, Hwang, Cheol Seong

“…The biomimetic characteristics of the memristor as an electronic synapse and neuron have inspired the advent of new information technology in the neuromorphic…”
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Pt/Ta2O5/HfO2−x/Ti Resistive Switching Memory Competing with Multilevel NAND Flash by Yoon, Jung Ho, Kim, Kyung Min, Song, Seul Ji, Seok, Jun Yeong, Yoon, Kyung Jean, Kwon, Dae Eun, Park, Tae Hyung, Kwon, Young Jae, Shao, Xinglong, Hwang, Cheol Seong

“…Pt/Ta2O5/HfO2−x/Ti resistive switching memory with a new circuit design is presented as a feasible candidate to succeed multilevel‐cell (MLC) NAND flash…”
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Fabrication of a Cu‐Cone‐Shaped Cation Source Inserted Conductive Bridge Random Access Memory and Its Improved Switching Reliability by Kim, Hae Jin, Park, Tae Hyung, Yoon, Kyung Jean, Seong, Won Mo, Jeon, Jeong Woo, Kwon, Young Jae, Kim, Yumin, Kwon, Dae Eun, Kim, Gil Seop, Ha, Tae Jung, Kim, Soo Gil, Yoon, Jung Ho, Hwang, Cheol Seong

“…Conductive bridge random access memory (CBRAM) has been regarded as a promising candidate for the next‐generation nonvolatile memory technology. Even with the…”
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Balancing the Source and Sink of Oxygen Vacancies for the Resistive Switching Memory by Park, Tae Hyung, Kwon, Young Jae, Kim, Hae Jin, Woo, Hyo Cheon, Kim, Gil Seop, An, Cheol Hyun, Kim, Yumin, Kwon, Dae Eun, Hwang, Cheol Seong

“…The high nonuniformity and low endurance of the resistive switching random access memory (RRAM) are the two major remaining hurdles at the device level for…”
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Uniform Self-rectifying Resistive Switching Behavior via Preformed Conducting Paths in a Vertical-type Ta2O5/HfO2-x Structure with a Sub-μm(2) Cell Area by Yoon, Jung Ho, Yoo, Sijung, Song, Seul Ji, Yoon, Kyung Jean, Kwon, Dae Eun, Kwon, Young Jae, Park, Tae Hyung, Kim, Hye Jin, Shao, Xing Long, Kim, Yumin, Hwang, Cheol Seong

“…To replace or succeed the present NAND flash memory, resistive switching random access memory (ReRAM) should be implemented in the vertical-type crossbar array…”
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Area‐Type Electronic Bipolar Resistive Switching of Pt/Al2O3/Si3N3.0/Ti with Forming‐Free, Self‐Rectification, and Nonlinear Characteristics by Kwon, Dae Eun, Kim, Jihun, Kwon, Young Jae, Woo, Kyung Seok, Yoon, Jung Ho, Hwang, Cheol Seong

“…Herein, electronic bipolar resistive switching of Pt/Al2O3/Si3N3.0/Ti device is investigated. The Pt/Si3N3.0/Ti device demonstrates bipolar resistive switching…”
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Comparison of the Atomic Layer Deposition of Tantalum Oxide Thin Films Using Ta(N t Bu)(NEt2)3, Ta(N t Bu)(NEt2)2Cp, and H2O by Song, Seul Ji, Park, Taehyung, Yoon, Kyung Jean, Yoon, Jung Ho, Kwon, Dae Eun, Noh, Wontae, Lansalot-Matras, Clement, Gatineau, Satoko, Lee, Han-Koo, Gautam, Sanjeev, Cho, Deok-Yong, Lee, Sang Woon, Hwang, Cheol Seong

“…The growth characteristics of Ta2O5 thin films by atomic layer deposition (ALD) were examined using Ta­(N t Bu)­(NEt2)3 (TBTDET) and Ta­(N t Bu)­(NEt2)2Cp…”
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Evolution of the shape of the conducting channel in complementary resistive switching transition metal oxides by Yoon, Kyung Jean, Song, Seul Ji, Seok, Jun Yeong, Yoon, Jung Ho, Park, Tae Hyung, Kwon, Dae Eun, Hwang, Cheol Seong

“…Ultimate control of the defect distribution and local conduction path in a bipolar resistive switching (BRS) Pt/TiO2/Pt sample, which was in a unipolar reset…”
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Area‐Type Electronic Bipolar Resistive Switching of Pt/Al 2 O 3 /Si 3 N 3.0 /Ti with Forming‐Free, Self‐Rectification, and Nonlinear Characteristics by Kwon, Dae Eun, Kim, Jihun, Kwon, Young Jae, Woo, Kyung Seok, Yoon, Jung Ho, Hwang, Cheol Seong

“…Herein, electronic bipolar resistive switching of Pt/Al 2 O 3 /Si 3 N 3.0 /Ti device is investigated. The Pt/Si 3 N 3.0 /Ti device demonstrates bipolar…”
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Pt/Ta 2 O 5 /HfO 2− x /Ti Resistive Switching Memory Competing with Multilevel NAND Flash by Yoon, Jung Ho, Kim, Kyung Min, Song, Seul Ji, Seok, Jun Yeong, Yoon, Kyung Jean, Kwon, Dae Eun, Park, Tae Hyung, Kwon, Young Jae, Shao, Xinglong, Hwang, Cheol Seong

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Filament Shape Dependent Reset Behavior Governed by the Interplay between the Electric Field and Thermal Effects in the Pt/TiO2/Cu Electrochemical Metallization Device by Kim, Hae Jin, Yoon, Kyung Jean, Park, Tae Hyung, Kim, Han Joon, Kwon, Young Jae, Shao, Xing Long, Kwon, Dae Eun, Kim, Yu Min, Hwang, Cheol Seong

“…The electrochemical metallization (ECM) cell is a feasible contender for high density resistance switching random access memory or neuromorphic devices. This…”
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Novel Selector‐Induced Current‐Limiting Effect through Asymmetry Control for High‐Density One‐Selector–One‐Resistor Crossbar Arrays by Kim, Yumin, Kwon, Young Jae, Kim, Jihun, An, Cheol Hyun, Park, Taegyun, Kwon, Dae Eun, Woo, Hyo Cheon, Kim, Hae Jin, Yoon, Jung Ho, Hwang, Cheol Seong

“…Crossbar arrays that use resistance‐switching random‐access memory are passive arrays, requiring a high‐performance cell selector. However, the array‐writing…”
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Comparison of the Atomic Layer Deposition of Tantalum Oxide Thin Films Using Ta(N t Bu)(NEt 2 ) 3 , Ta(N t Bu)(NEt 2 ) 2 Cp, and H 2 O by Song, Seul Ji, Park, Taehyung, Yoon, Kyung Jean, Yoon, Jung Ho, Kwon, Dae Eun, Noh, Wontae, Lansalot-Matras, Clement, Gatineau, Satoko, Lee, Han-Koo, Gautam, Sanjeev, Cho, Deok-Yong, Lee, Sang Woon, Hwang, Cheol Seong

“…The growth characteristics of Ta O thin films by atomic layer deposition (ALD) were examined using Ta(N Bu)(NEt ) (TBTDET) and Ta(N Bu)(NEt ) Cp (TBDETCp) as…”
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Uniform Self-rectifying Resistive Switching Behavior via Preformed Conducting Paths in a Vertical-type Ta 2 O 5 /HfO 2– x Structure with a Sub-μm 2 Cell Area by Yoon, Jung Ho, Yoo, Sijung, Song, Seul Ji, Yoon, Kyung Jean, Kwon, Dae Eun, Kwon, Young Jae, Park, Tae Hyung, Kim, Hye Jin, Shao, Xing Long, Kim, Yumin, Hwang, Cheol Seong

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Highly Uniform, Electroforming‐Free, and Self‐Rectifying Resistive Memory in the Pt/Ta 2 O 5 /HfO 2‐x /TiN Structure by Yoon, Jung Ho, Song, Seul Ji, Yoo, Il‐Hyuk, Seok, Jun Yeong, Yoon, Kyung Jean, Kwon, Dae Eun, Park, Tae Hyung, Hwang, Cheol Seong

“…The development of a resistance switching (RS) memory cell that contains rectification functionality in itself, highly reproducible RS performance, and…”
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Highly Uniform, Electroforming-Free, and Self-Rectifying Resistive Memory in the Pt/Ta sub(2)O sub(5)/HfO sub(2-x)/TiN Structure by Yoon, Jung Ho, Song, Seul Ji, Yoo, Il-Hyuk, Seok, Jun Yeong, Yoon, Kyung Jean, Kwon, Dae Eun, Park, Tae Hyung, Hwang, Cheol Seong

“…The development of a resistance switching (RS) memory cell that contains rectification functionality in itself, highly reproducible RS performance, and…”
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Pt/Ta sub(2)O sub(5)/HfO sub(2-x)/Ti Resistive Switching Memory Competing with Multilevel NAND Flash by Yoon, Jung Ho, Kim, Kyung Min, Song, Seul Ji, Seok, Jun Yeong, Yoon, Kyung Jean, Kwon, Dae Eun, Park, Tae Hyung, Kwon, Young Jae, Shao, Xinglong, Hwang, Cheol Seong

“…Pt/Ta sub(2)O sub(5)/HfO sub(2-x)/ Ti resistive switching memory with a new circuit design is presented as a feasible candidate to succeed multilevel-cell…”
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