Novel capacitor technology for high density stand-alone and embedded DRAMs

Novel Al/sub 2/O/sub 3/ process was developed in order to extend the applicability of reliable SIS and MIS Al/sub 2/O/sub 3/ capacitors as well as Al/sub 2/O/sub 3/ EBL for a MIM capacitor. By applying ALD process utilizing a smart growth mechanism, electrical and interfacial properties of Al/sub 2/...

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Bibliographic Details
Published in:	International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138) pp. 369 - 372
Main Authors:	Yeong Kwan Kim, Seung Hwan Lee, Sung Je Choi, Hong Bae Park, Young Dong Seo, Kwang Hyun Chin, Dongchan Kim, Jae Soon Lim, Wan Don Kim, Kab Jin Nam, Man-Ho Cho, Ki Hyun Hwang, Young Sun Kim, Seok Sik Kim, Young Wook Park, Joo Tae Moon, Sang In Lee, Moon Yong Lee
Format:	Conference Proceeding
Language:	English
Published:	IEEE 2000
Subjects:	Aluminum oxide Dielectric thin films Electrodes Hydrogen Mechanical factors Metal-insulator structures MIM capacitors Moon Random access memory Semiconductor films
Online Access:	Get full text
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Summary:	Novel Al/sub 2/O/sub 3/ process was developed in order to extend the applicability of reliable SIS and MIS Al/sub 2/O/sub 3/ capacitors as well as Al/sub 2/O/sub 3/ EBL for a MIM capacitor. By applying ALD process utilizing a smart growth mechanism, electrical and interfacial properties of Al/sub 2/O/sub 3/ film were surprisingly improved. The SIS and MIS Al/sub 2/O/sub 3/ capacitor technologies with ultra-low thermal budget were confirmed by producing fully working 1 Gbit DRAM with design rule of 0.15 and 0.13 /spl mu/m, respectively. Moreover, Al/sub 2/O/sub 3/ EBL for a MIM capacitor was successfully used to preserve the excellent dielectric characteristics for the application of DRAM with design-rule of 0.10 /spl mu/m, and beyond.
ISBN:	9780780364387 0780364384
DOI:	10.1109/IEDM.2000.904332