Search Results - "Kuzum, D"

On the Correct Extraction of Interface Trap Density of MOS Devices With High-Mobility Semiconductor Substrates by Martens, K., Chi On Chui, Brammertz, G., De Jaeger, B., Kuzum, D., Meuris, M., Heyns, M., Krishnamohan, T., Saraswat, K., Maes, H.E., Groeseneken, G.

“…ldquoConventionalrdquo techniques and related capacitance-voltage characteristic interpretation were established to evaluate interface trap density on Si…”
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Ge (100) and (111) N- and P-FETs With High Mobility and Low- T Mobility Characterization by Kuzum, D., Pethe, A.J., Krishnamohan, T., Saraswat, K.C.

“…In this paper, we demonstrate high-mobility bulk Ge N- and P-FETs with GeON gate dielectric. The highest electron mobility to date in Ge is reported, and two…”
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Ge-Interface Engineering With Ozone Oxidation for Low Interface-State Density by Kuzum, D., Krishnamohan, T., Pethe, A.J., Okyay, A.K., Oshima, Y., Yun Sun, McVittie, J.P., Pianetta, P.A., McIntyre, P.C., Saraswat, K.C.

“…Passivation of Ge has been a critical issue for Ge MOS applications in future technology nodes. In this letter, we introduce ozone oxidation to engineer…”
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Silicon Germanium CMOS Optoelectronic Switching Device: Bringing Light to Latch by Okyay, A.K., Kuzum, D., Latif, S., Miller, D.A.B., Saraswat, K.C.

“…We propose a novel semiconductor optoelectronic (OE) switch that is a fusion of a Ge optical detector and a Si metal-oxide-semiconductor (MOS) field-effect…”
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The Future of Holistic Neural Interfaces: 2D Materials, Neuromorphic Computing, and Computational Co-Design by Wilson, M., Ramezani, M., Kim, J., Kuzum, D.

“…The next leap in implantable neural interfaces requires technological advances in materials, devices, and computing paradigms. Holistic approaches integrating…”
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Synaptic electronics: materials, devices and applications by Kuzum, Duygu, Yu, Shimeng, Wong, H-S Philip

“…In this paper, the recent progress of synaptic electronics is reviewed. The basics of biological synaptic plasticity and learning are described. The material…”
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An Electronic Synapse Device Based on Metal Oxide Resistive Switching Memory for Neuromorphic Computation by Shimeng Yu, Yi Wu, Jeyasingh, R., Kuzum, D., Wong, H. P.

“…The multilevel capability of metal oxide resistive switching memory was explored for the potential use as a single-element electronic synapse device. TiN/HfO x…”
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Low-Energy Robust Neuromorphic Computation Using Synaptic Devices by Kuzum, D., Jeyasingh, R. G. D., Shimeng Yu, Wong, H.-S P.

“…Brain-inspired computing is an emerging field, which aims to reach brainlike performance in real-time processing of sensory data. The challenges that need to…”
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Investigation of Trap Spacing for the Amorphous State of Phase-Change Memory Devices by Jeyasingh, R. G. D., Kuzum, D., Wong, H-S P.

“…The subthreshold conduction in the amorphous state of the phase-change material is dominated by the hopping of the carriers through the trap states or…”
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Ge (100) and (111) N- and P-FETs With High Mobility and Low-[Formula Omitted] Mobility Characterization by Kuzum, D, Pethe, A.J, Krishnamohan, T, Saraswat, K.C

“…In this paper, we demonstrate high-mobility bulk Ge N- and P-FETs with GeON gate dielectric. The highest electron mobility to date in Ge is reported, and two…”
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N-Channel Germanium MOSFET Fabricated Below 360 ^\hbox by Cobalt-Induced Dopant Activation for Monolithic Three-Dimensional-ICs by Jin-Hong Park, Kuzum, D, Woo-Shik Jung, Saraswat, K C

“…Below 360°C, we demonstrate germanium (Ge) n+/p junction diode and n-channel Ge metal-oxide-semiconductor field-effect transistor (MOSFET) with a low…”
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Phase Change Memory: Scaling and applications by Jeyasingh, R., Jiale Liang, Caldwell, M. A., Kuzum, D., Wong, H.-S P.

“…Phase Change Memory (PCM) technology is a promising candidate for the future non-volatile memory applications. Scaling of PCM into the sub-10 nm regime has…”
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Novel Si-based Optoelectronic Switching Device: Light to Latch by Okyay, A.K., Pethe, A.J., Kuzum, D., Latif, S., Miller, D.A.B., Saraswat, K.C.

“…A novel, high performance optoelectronic switch is introduced. The device is a Si- MOSFET with Ge gate that can be fabricated at the nanoscale with very low…”
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Experimental demonstration of high mobility Ge NMOS by Kuzum, D., Krishnamohan, T., Nainani, A., Yun Sun, Pianetta, P.A., Wong, H.S.-P., Saraswat, K.C.

“…The highest electron mobility in Ge NMOS to-date, ~1.5 times the universal Si mobility, is demonstrated experimentally. Gate stack engineered with…”
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Direct Measurement of Trap Spacing in Phase Change Memory Cells Using ATE Devices by Jeyasingh, R G D, Kuzum, D, Wong, H.-S P

“…The electrical conduction in the amorphous state of the phase change material is through the localized states. The density of these trap states or the trap…”
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Low temperature (≤ 380°C) and high performance Ge CMOS technology with novel source/drain by metal-induced dopants activation and high-k/metal gate stack for monolithic 3D integration by Jin-Hong Park, Tada, M., Kuzum, D., Kapur, P., Hyun-Yong Yu, Wong, H.-S.P., Saraswat, K.C.

“…We demonstrate high performance, 3D IC compatible, Ge n and p-MOSFETs fabricated at very low temperatures, below 380degC. The low temperature gate stack…”
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Novel Si-based CMOS Optoelectronic Switching Device Operating in the Near Infrared by Okyay, A.K., Pethe, A.J., Kuzum, D., Latif, S., Miller, D.A.A., Saraswat, A.K.C.

“…A novel, high performance optoelectronic switch is introduced. The device is a Si-MOSFET with Ge gate that can be fabricated at the nanoscale with very low…”
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