Search Results - "Kuzmik, J."

Power electronics on InAlN/(In)GaN: Prospect for a record performance by Kuzmik, J.

“…We compare basic physical parameters of Al/sub 0.2/Ga/sub 0.8/N-GaN quantum well with In/sub 0.17/Al/sub 0.83/N/GaN and In/sub 0.17/Al/sub 0.83/N/In/sub…”
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A comprehensive analytical model for threshold voltage calculation in GaN based metal-oxide-semiconductor high-electron-mobility transistors by Ťapajna, M., Kuzmík, J.

“…An analytical model for threshold voltage calculation for metal-oxide-semiconductor GaN based high electron mobility transistors is proposed. This model…”
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Gate Reliability Investigation in Normally-Off p-Type-GaN Cap/AlGaN/GaN HEMTs Under Forward Bias Stress by Tapajna, M., Hilt, O., Bahat-Treidel, E., Wurfl, J., Kuzmik, J.

“…Gate reliability of normally-off p-type-GaN/AlGaN/GaN high-electron mobility transistors grown on Si substrate subjected to forward bias stress at different…”
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Growth evolution of N-polar indium-rich InAlN layer on c-sapphire via strain relaxation by ultrathin AlON interlayer by Chauhan, Prerna, Hasenöhrl, S., Minj, A., Chauvat, M.P., Ruterana, P., Kuzmík, J.

“…[Display omitted] •This research provides understanding towards indium-incorporation in InAlN layer.•AlON interlayer formed due to the nitridation of sapphire…”
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Electron transport properties in thin InN layers grown on InAlN by Stoklas, R., Hasenöhrl, S., Dobročka, E., Gucmann, F., Kuzmík, J.

“…We present a comprehensive analysis of structural and charge transport properties of high-quality N-polar InN/In0.57Al0.43N heterostructures grown by…”
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Non-conventional scans in high-resolution X-ray diffraction analysis of epitaxial systems by Dobročka, E., Hasenöhrl, S., Chauhan, P., Kuzmík, J.

“…•Linear scans in reciprocal space are examined for coplanar diffraction geometry.•Concept of linear scans is extended to non-coplanar set-up.•Scans and…”
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Investigation of ‘surface donors’ in Al2O3/AlGaN/GaN metal-oxide-semiconductor heterostructures: Correlation of electrical, structural, and chemical properties by Ťapajna, M., Stoklas, R., Gregušová, D., Gucmann, F., Hušeková, K., Haščík, Š., Fröhlich, K., Tóth, L., Pécz, B., Brunner, F., Kuzmík, J.

“…•We present a simple approach to manipulate the so-called surface donors in Al2O3/GaN/AlGaN/GaN MOS-heterojunctions.•This enebles technological control of the…”
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Bulk and interface trapping in the gate dielectric of GaN based metal-oxide-semiconductor high-electron-mobility transistors by Ťapajna, M., Jurkovič, M., Válik, L., Haščík, Š., Gregušová, D., Brunner, F., Cho, E.-M., Kuzmík, J.

“…The trapping phenomena in GaN metal-oxide-semiconductor high-electron mobility transistor structures with 10 and 20-nm thick Al2O3 gate dielectric grown by…”
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Growth and performance of n++ GaN cap layer for HEMTs applications by Kuzmík, J., Blaho, M., Gregušová, D., Eliáš, P., Pohorelec, O., Hasenöhrl, S., Haščík, Š., Gucmann, F., Zápražný, Z., Dobročka, E., Kyambaki, M., Konstantinidis, G.

“…Apart from providing high-quality ohmic contacts to III-N devices, n++ GaN cap layers can eliminate surface-related current collapse effects in…”
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Investigation of interfaces and threshold voltage instabilities in normally-off MOS-gated InGaN/AlGaN/GaN HEMTs by Pohorelec, O., Ťapajna, M., Gregušová, D., Gucmann, F., Hasenöhrl, S., Haščík, Š., Stoklas, R., Seifertová, A., Pécz, B., Tóth, L., Kuzmík, J.

“…[Display omitted] •Normally-off devices prepared by polarization engineering using InGaN layer.•Polarization charge at the InGaN/AlGaN interface confirmed by…”
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Self-aligned normally-off metal-oxide-semiconductor n++GaN/InAlN/GaN high electron mobility transistors by Blaho, M., Gregušová, D., Haščík, Š., Jurkovič, M., Ťapajna, M., Fröhlich, K., Dérer, J., Carlin, J. -F., Grandjean, N., Kuzmík, J.

“…Self‐aligned normally‐off n++GaN/InAlN/AlN/GaN MOS HEMTs with a recessed gate show scalable threshold voltage between 1.3 to 3.7 V, which increases with the…”
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Characterization of interface states in AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with HfO2 gate dielectric grown by atomic layer deposition by Stoklas, R., Gregušová, D., Hasenöhrl, S., Brytavskyi, E., Ťapajna, M., Fröhlich, K., Haščík, Š., Gregor, M., Kuzmík, J.

“…[Display omitted] •X-ray analysis of MOS-HFETs with HfO2 gate oxide prepared by ALD at two different precursors “water“ and “ozone“.•The gate leakage and RF…”
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Impact of oxide/barrier charge on threshold voltage instabilities in AlGaN/GaN metal-oxide-semiconductor heterostructures by Ťapajna, M., Drobný, J., Gucmann, F., Hušeková, K., Gregušová, D., Hashizume, T., Kuzmík, J.

“…Threshold voltage instabilities in AlGaN/GaN metal-oxide-semiconductor (MOS) heterostructures were investigated by means of capacitance-voltage (CV) hysteresis…”
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InAlN/GaN HEMTs: a first insight into technological optimization by Kuzmik, J., Kostopoulos, A., Konstantinidis, G., Carlin, J.-F., Georgakilas, A., Pogany, D.

“…High-electron mobility transistors (HEMTs) were fabricated from heterostructures consisting of undoped In/sub 0.2/Al/sub 0.8/N barrier and GaN channel layers…”
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Current conduction mechanism and electrical break-down in InN grown on GaN by Kuzmik, J., Fleury, C., Adikimenakis, A., Gregušová, D., Ťapajna, M., Dobročka, E., Haščík, Š., Kučera, M., Kúdela, R., Androulidaki, M., Pogany, D., Georgakilas, A.

“…Current conduction mechanism, including electron mobility, electron drift velocity (vd ) and electrical break-down have been investigated in a 0.5 μm-thick…”
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Determination of channel temperature in AlGaN/GaN HEMTs grown on sapphire and silicon substrates using DC characterization method by Kuzmik, J., Javorka, R., Alam, A., Marso, M., Heuken, M., Kordos, P.

“…Self-heating effects and temperature rise in AlGaN/GaN HEMTs grown on silicon and sapphire substrates are studied, exploiting transistor DC characterization…”
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Adjustment of threshold voltage in AlN/AlGaN/GaN high-electron mobility transistors by plasma oxidation and Al2O3 atomic layer deposition overgrowth by Gregušová, D., Jurkovič, M., Haščík, Š., Blaho, M., Seifertová, A., Fedor, J., Ťapajna, M., Fröhlich, K., Vogrinčič, P., Liday, J., Derluyn, J., Germain, M., Kuzmik, J.

“…We discuss possibilities of adjustment of a threshold voltage VT in normally off GaN high-electron mobility transistors (HEMTs) without compromising a maximal…”
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Simulation study of interface traps and bulk traps in n++GaN/InAlN/AlN/GaN high electron mobility transistors by MOLNAR, M, DONOVAL, D, KUZMIK, J, MAREK, J, CHVALA, A, PRIBYTNY, P, MIKOLASEK, M, RENDEK, K, PALANKOVSKI, V

“…We investigate the impact of interface traps and bulk traps on the performance of n++GaN/InAlN/AlN/GaN high electron mobility transistors (HEMTs) using…”
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Current transport and barrier height evaluation in Ni/InAlN/GaN Schottky diodes by Donoval, D., Chvála, A., Šramatý, R., Kováč, J., Carlin, J.-F., Grandjean, N., Pozzovivo, G., Kuzmík, J., Pogany, D., Strasser, G., Kordoš, P.

“…The current-voltage characteristics of the Ni/InAlN/GaN Schottky diodes were measured at various temperatures in the range of 300–700 K. The experimental data…”
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Transient thermal characterization of AlGaN/GaN HEMTs grown on silicon by Kuzmik, J., Bychikhin, S., Neuburger, M., Dadgar, A., Krost, A., Kohn, E., Pogany, D.

“…We studied a temperature increase and a heat transfer into a substrate in a pulsed operation of 0.5 length and 150 /spl mu/m gate width AlGaN/GaN HEMTs grown…”
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