Search Results - "Kuzmenkov, A.G"

Vertical-cavity surface-emitting lasers based on submonolayer InGaAs quantum dots by Blokhin, S.A., Maleev, N.A., Kuzmenkov, A.G., Sakharov, A.V., Kulagina, M.M., Shernyakov, Y.M., Novikov, I.I., Maximov, M.V., Ustinov, V.M., Kovsh, A.R., Mikhrin, S.S., Ledentsov, N.N., Lin, G., Chi, J.Y.

“…Molecular beam epitaxy-grown 0.98-mum vertical-cavity surface-emitting lasers (VCSELs) with a three-stack submonolayer (SML) InGaAs quantum-dot (QD) active…”
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Single-Lobe Single-Wavelength Lasing in Ultrabroad-Area Vertical-Cavity Surface-Emitting Lasers Based on the Integrated Filter Concept by Blokhin, S.A., Karachinsky, L.Ya, Novikov, I.I., Gordeev, N.Yu, Sakharov, A.V., Maleev, N.A., Kuzmenkov, A.G., Shernyakov, Y.M., Maximov, M.V., Kovsh, A.R., Mikhrin, S.S., Shchukin, V.A., Ledentsov, N.N., Ustinov, V.M., Bimberg, D.

“…We have studied broad-area vertical-cavity surface-emitting lasers grown in the antiwaveguiding approach (AVCSELs). The AVCSEL-type devices were fabricated in…”
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1550-nm waveband VCSELs made by wafer-fusion technique by Rochas, S.S., Babichev, A.V., Blokhin, S.A., Gladyshev, A.G., Karachinsky, L.Ya, Novikov, I.I., Blokhin, A.A., Bobrov, M.A., Kuzmenkov, A.G., Maleev, N.A., Nevedomsky, N.A., Andryushkinl, V.V., Voropaev, K.O., Zhumaeva, I.O., Ustinov, V.M., Egorov, A.Yu, Bougrov, V.E.

“…1550-nm VCSELs with an active region of ten compressive-strained InGaAs QW, separated by the InP lattice-matched InAlGaAs barrier layers and GaAs/AlGaAs…”
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Demultiplexed single-photon source with a quantum dot coupled to microresonator by Rakhlin, M.V., Galimov, A.I., Dyakonov, I.V., Skryabin, N.N., Klimko, G.V., Kulagina, M.M., Zadiranov, Yu.M., Sorokin, S.V., Sedova, I.V., Guseva, Yu.A., Berezina, D.S., Serov, Yu.M., Maleev, N.A., Kuzmenkov, A.G., Troshkov, S.I., Taratorin, K.V., Skalkin, A.K., Straupe, S.S., Kulik, S.P., Shubina, T.V., Toropov, A.A.

“…The characteristics of a single-photon emitter based on a semiconductor quantum dot, such as their indistinguishability and brightness, depend on the stability…”
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Emission-Line Width and [alpha]-Factor of 850-nm Single-Mode Vertical-Cavity Surface-Emitting Lasers Based on InGaAs/AlGaAs Quantum Wells by Blokhin, S.A, Bobrov, M.A, Blokhin, A.A, Kuzmenkov, A.G, Vasilev, A.P, Zadiranov, Yu.M, Evropeytsev, E.A, Sakharov, A.V, Ledentsov, N.N, Karachinsky, L.Ya, Ospennikov, A.M, Maleev, N.A, Ustinov, V.M

“…The emission-line width for 850-nm single-mode vertical-cavity surface-emitting lasers based on InGaAs/AlGaAs quantum wells is studied. The width of the…”
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Molecular-beam epitaxy of InGaAs/InAlAs/AlAs structures for heterobarrier varactors by Maleev, N. A., Belyakov, V. A., Vasil’ev, A. P., Bobrov, M. A., Blokhin, S. A., Kulagina, M. M., Kuzmenkov, A. G., Nevedomskii, V. N., Guseva, Yu. A., Maleev, S. N., Ladenkov, I. V., Fefelova, E. L., Fefelov, A. G., Ustinov, V. M.

“…The molecular-beam epitaxy of InGaAs/InAlAs/AlAs structures for heterobarrier varactors is studied and optimized. The choice of the substrate-holder…”
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Polarization characteristics of 850-nm vertical-cavity surface-emitting lasers with intracavity contacts and a rhomboidal oxide current aperture by Bobrov, M. A., Maleev, N. A., Blokhin, S. A., Kuzmenkov, A. G., Vasil’ev, A. P., Blokhin, A. A., Guseva, Yu. A., Kulagina, M. M., Zadiranov, Yu. M., Troshkov, S. I., Lysak, V., Ustinov, V. M.

“…The polarization characteristics of 850-nm vertical-cavity surface-emitting lasers (VCSELs) with intracavity contacts and a rhomboidal oxide current aperture…”
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Effect of the photon lifetime on the characteristics of 850-nm vertical-cavity surface-emitting lasers with fully doped distributed Bragg reflectors and an oxide current aperture by Bobrov, M. A., Blokhin, S. A., Kuzmenkov, A. G., Maleev, N. A., Blokhin, A. A., Zadiranov, Yu. M., Nikitina, E. V., Ustinov, V. M.

“…The effect of the photon lifetime in an optical microcavity on the characteristics of 850-nm vertical-cavity surface-emitting lasers (VCSELs) with fully doped…”
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Study of high-speed semiconductor VCSELs based on AlInGaAs heterostructures with large gain-cavity detuning by Maleev, N. A., Blokhin, S. A., Bobrov, M. A., Kuzmenkov, A. G., Blokhin, A. A., Moser, P., Lott, J. A., Bimberg, D., Ustinov, V. M.

“…The effect of the spectral detuning between the spectral gain maximum of an active region based on AlInGaAs nanoheterostructures and vertical microcavity…”
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Degradation-robust 850-nm vertical-cavity surface-emitting lasers for 25Gb/s optical data transmission by Blokhin, S. A., Karachinsky, L. Ya, Novikov, I. I., Payusov, A. S., Nadtochiy, A. M., Bobrov, M. A., Kuzmenkov, A. G., Maleev, N. A., Ledentsov, N. N., Ustinov, V. M., Bimberg, D.

“…Highly efficient fast vertical-cavity surface-emitting lasers (VCSELs) for the 850-nm spectral range, promising for the development of optical interconnections…”
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Noise performance of 89Xnm single-mode VCSELs by Bobrov, M.A., Blokhin, S.A., Kovach, Ya.N., Blokhin, A.A., Maleev, N.A., Kuzmenkov, A.G., Zadiranov, Yu.M., Kulagina, M.M., Guseva, Yu.A., Vasil'Ev, A.P., Marchii, M.N., Ustinov, V.M.

“…The study of the noise characteristics of the 89X nm single-mode polarization-stable VCSELs based on InGaAs quantum wells is presented. When VCSEL emission is…”
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Influence of optical losses on the dynamic characteristics of linear arrays of near-infrared vertical-cavity surface-emitting lasers by Blokhin, S. A., Bobrov, M. A., Maleev, N. A., Kuzmenkov, A. G., Stetsenko, V. V., Pavlov, M. M., Karachinsky, L. Ya, Novikov, I. I., Zadiranov, Yu. M., Egorov, A. Yu, Ustinov, V. M.

“…The effect of the level of internal and external optical losses on the dynamic characteristics of vertical-cavity surface-emitting lasers (VCSELs) in the…”
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Study of the effect of the gate region parameters on static characteristics of microwave field-effect transistors based on pseudomorphic AlGaAs-InGaAs-GaAs heterostructures by Tikhomirov, V. G., Maleev, N. A., Kuzmenkov, A. G., Solov’ev, Yu. V., Gladyshev, A. G., Kulagina, M. M., Zemlyakov, V. E., Dudinov, K. V., Yankevich, V. B., Bobyl, A. V., Ustinov, V. M.

“…The results of numerical simulation and experimental study of the effect of the gate region parameters on static characteristics of microwave field-effect…”
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Matrices of 960-nm vertical-cavity surface-emitting lasers by Maleev, N. A., Kuzmenkov, A. G., Shulenkov, A. S., Blokhin, S. A., Kulagina, M. M., Zadiranov, Yu. M., Tikhomirov, V. G., Gladyshev, A. G., Nadtochiy, A. M., Nikitina, E. V., Lott, J. A., Svede-Shvets, V. N., Ledentsov, N. N., Ustinov, V. M.

“…Matrices of vertical-cavity surface-emitting lasers with individual addressing of elements and radiation output through a gallium arsenide substrate are…”
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Single-spatial-mode semiconductor VCSELs with a nonplanar upper dielectric DBR by Maleev, N. A., Kuz’menkov, A. G., Kulagina, M. M., Zadiranov, Yu. M., Vasil’ev, A. P., Blokhin, S. A., Shulenkov, A. S., Troshkov, S. I., Gladyshev, A. G., Nadtochiy, A. M., Pavlov, M. M., Bobrov, M. A., Nazaruk, D. E., Ustinov, V. M.

“…Single-spatial-mode semiconductor vertical-cavity surface-emitting lasers (VCSELs) with a non-planar upper (output) dielectric distributed Bragg reflector…”
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Integration of Depletion-and Enhancement-Mode AlGaAs/GaAs MESFET for High-Speed MMIC Application by Gusenkova, A.V., Maleev, N.A., Mikhrin, V.S., Kuzmenkov, A.G., Vasil'ev, A.P., Kulagina, M.M., Zhukov, A.E., Shulenkov, A.S.

“…An enhancement/depletion 0.35-mum recessed-gate GaAs MESFET process based on selective wet etching using Al 1-x Ga x As etch-stop layers is presented. The…”
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Self-sustained pulsation and signal peaking in the oxide-confined VCSELs based on submonolayer InGaAs quantum dots by Sokolovskii, G.S., Maleev, N.A., Kuzmenkov, A.G., Blokhin, S.A., McRobbie, A.D., Cataluna, M.A., Deryagin, A.G., Chumak, S.V., Shulenkov, A.S., Mikhrin, S.S., Kovsh, A.R., Kuchinskii, V.I., Ustinov, V.M., Sibbett, W., Rafailov, E.U.

“…This paper reports self-sustained pulsation and electrical-to-optical signal peaking in vertical-cavity surface-emitting lasers (VCSEL) having a sub-monolayer…”
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