Search Results - "Kuzmenkov, A. G"
-
1
1550 nm Range High-Speed Single-Mode Vertical-Cavity Surface-Emitting Lasers
Published in Semiconductors (Woodbury, N.Y.) (01-04-2023)“…The results of complex studies of static and dynamic performance of 1550 nm range VCSELs, which were created by direct bonding (wafer fusion technique)…”
Get full text
Journal Article -
2
Design optimization for bright electrically-driven quantum dot single-photon sources emitting in telecom O-band
Published in Optics express (01-03-2021)“…A combination of advanced light engineering concepts enables a substantial improvement in photon extraction efficiency of micro-cavity-based single-photon…”
Get full text
Journal Article -
3
Peculiarities of Growth of InAs Quantum Dot Arrays with Low Surface Density by Molecular Beam Epitaxy
Published in Technical physics letters (01-12-2023)“…The influence of the substrate temperature and the flux of In adatoms on the structural and optical characteristics of InAs quantum dots with a low surface…”
Get full text
Journal Article -
4
Investigation of the Noise Characteristics of Vertical-Cavity Surface-Emitting Laser with a Rhomboidal Oxide Current Aperture for Use in a Cs-Based Compact Atomic Magnetometer
Published in Technical physics letters (01-12-2023)“…—The possibility of using vertical-emitting lasers with intracavity contacts (IC-VCSEL) and a rhomboidal oxide current aperture for creating a non-zero…”
Get full text
Journal Article -
5
Microwave Schottky Diodes based on Single GaN Nanowires
Published in Technical physics letters (01-12-2023)“…A series of Schottky diodes based on single GaN nanowires has been fabricated. Based on the data of small-signal frequency analysis (parameter S 21 ) of diode…”
Get full text
Journal Article -
6
Mushroom Mesa Structure for InAlAs–InGaAs Avalanche Photodiodes
Published in Technical physics letters (01-12-2023)“…Mushroom mesa structure for InAlAs/InGaAs avalanche photodiodes (APD) was proposed and investigated. APD heterostructrures were grown by molecular-beam…”
Get full text
Journal Article -
7
Emission Linewidth and α-Factor of 1.55 μm-Range Vertical-Cavity Surface-Emitting Lasers Based on InGaAs/InGaAlAs Quantum Wells
Published in Optics and spectroscopy (01-02-2024)“…The emission linewidth of single-mode vertical-cavity surface-emitting lasers with an active region based on strained InGaAs/InGaAlAs quantum wells in the…”
Get full text
Journal Article -
8
Investigation of the Characteristics of the InGaAs/InAlGaAs Superlattice for 1300 nm Range Vertical-Cavity Surface-Emitting Lasers
Published in Technical physics (01-12-2023)“…X-ray structural analysis and photoluminescence spectroscopy techniques were used to study heterostructures based on InGaAs/InAlGaAs superlattice for active…”
Get full text
Journal Article -
9
Impact of Transverse Optical Confinement on Performance of 1.55 μm Vertical-Cavity Surface-Emitting Lasers with a Buried Tunnel Junction
Published in Technical physics letters (01-12-2023)“…—The impact of transverse optical confinement on the static and spectral characteristics of 1.55 μm vertical-cavity surface-emitting lasers (WF-VCSEL) with a…”
Get full text
Journal Article -
10
Analysis of Internal Optical Loss of 1.3 μm Vertical-Cavity Surface-Emitting Laser Based on n++-InGaAs/p++-InGaAs/p++-InAlGaAs Tunnel Junction
Published in Technical physics letters (01-12-2023)“…—The analysis of internal optical loss and internal quantum efficiency in 1.3 μm-range InAlGaA-sP/AlGaAs a composite n + -InGaAs/ p + -InGaAs/ p + -InAlGaAs…”
Get full text
Journal Article -
11
Simulation and Analysis of the Optical Characteristics of Cylindrical Micropillars with InAs/GaAs Quantum Dots
Published in JETP letters (01-11-2022)“…The optical characteristics of vertical cylindrical micropillars with AlGaAs distributed Bragg reflectors and InAs/GaAs quantum dots, which are designed for…”
Get full text
Journal Article -
12
1.55-μm-Range Vertical-Cavity Surface-Emitting Lasers, Manufactured by Wafer Fusion of Heterostructures Grown by Solid-Source Molecular-Beam Epitaxy
Published in Semiconductors (Woodbury, N.Y.) (01-10-2020)“…The results are presented of a study and optimization of the conditions under which heterointerfaces of the GaAs–InGaAsP type are formed via the direct…”
Get full text
Journal Article -
13
High-Speed Vertical-Cavity Surface-Emitting 1550-nm-Range Lasers Manufactured by the Wafer Fusion Technology
Published in Bulletin of the Lebedev Physics Institute (01-08-2023)“…The results of studies of the characteristics of vertical-cavity surface-emitting lasers of 1550-nm spectral range with active region based on quantum InGaAs…”
Get full text
Journal Article -
14
High-Speed Semiconductor Vertical-Cavity Surface-Emitting Lasers for Optical Data-Transmission Systems (Review)
Published in Technical physics letters (01-01-2018)“…The main problems of providing a high-speed operation semiconductor lasers with a vertical microcavity (so-called “vertical-cavity surface-emitting lasers”)…”
Get full text
Journal Article -
15
Investigation of Anomalous Lasing in Vertical-Cavity Surface-Emitting Lasers of the 850-nm Spectral Range with a Double Oxide Current Aperture at Large Gain-to-Cavity Detuning
Published in Optics and spectroscopy (01-08-2020)“…Results of investigation of static characteristics of the vertical-cavity surface-emitting lasers (VCSEL) of the 850-nm spectral range based on strained…”
Get full text
Journal Article -
16
Influence of Output Optical Losses on the Dynamic Characteristics of 1.55-μm Wafer-Fused Vertical-Cavity Surface-Emitting Lasers
Published in Semiconductors (Woodbury, N.Y.) (01-08-2019)“…The results of studying the dynamic characteristics of 1.55-μm single-mode vertical-cavity surface-emitting lasers (VCSELs) formed by the fusion of wafers of…”
Get full text
Journal Article -
17
The Effect of a Saturable Absorber in Long-Wavelength Vertical-Cavity Surface-Emitting Lasers Fabricated by Wafer Fusion Technology
Published in Technical physics letters (01-12-2020)“…An investigation has been performed of 1.55-μm vertical-cavity surface-emitting lasers based on heterostructures with a buried tunnel junction (BTJ) with a…”
Get full text
Journal Article -
18
Heterobarrier Varactors with Nonuniformly Doped Modulation Layers
Published in Technical physics letters (01-10-2019)“…Optimum shape of the capacitance–voltage ( C – V ) characteristic is a critical parameter determining the efficiency of frequency multiplication in…”
Get full text
Journal Article -
19
Analysis of the Internal Optical Losses of the Vertical-Cavity Surface-Emitting Laser of the Spectral Range of 1.55 µm Formed by a Plate Sintering Technique
Published in Optics and spectroscopy (01-07-2019)“…The results of a study of internal optical losses and current injection efficiency in vertical-emitting lasers of a spectral range of 1.55 µm obtained by…”
Get full text
Journal Article -
20
The Design of an Electrically-Driven Single Photon Source of the 1.3-μm Spectral Range Based on a Vertical Microcavity with Intracavity Contacts
Published in Technical physics letters (01-03-2021)“…Using mathematical simulation methods, various versions of the design of electrically-driven single photon sources based on optical microcavities with single…”
Get full text
Journal Article