Search Results - "Kutlu, Kubilay"
-
1
Structural Modification of Sol-Gel Synthesized V2O5 and TiO2 Thin Films with/without Erbium Doping
Published in Advances in materials science and engineering (01-01-2014)“…Comparative work of with/without erbium- (Er-) doped vanadium pentoxide (V2O5) and titanium dioxide (TiO2) thin films were carried out via sol-gel technique by…”
Get full text
Journal Article -
2
Comparison of Structural and Electrochemical Properties of V2O5 Thin Films Prepared by Organic/Inorganic Precursors
Published in Electrochimica acta (01-03-2014)“…Vanadium pentoxide thin films were produced from organic and inorganic precursors by sol gel dip-coating method. Fourier transform infrared spectroscopy and UV…”
Get full text
Journal Article -
3
Comparison of Structural and Electrochemical Properties of V sub(2)O sub(5) Thin Films Prepared by Organic/Inorganic Precursors
Published in Electrochimica acta (01-03-2014)“…Vanadium pentoxide thin films were produced from organic and inorganic precursors by sol gel dip-coating method. Fourier transform infrared spectroscopy and UV…”
Get full text
Journal Article -
4
Structural, optical and electrochromic properties of cerium dioxide thin films prepared by sol–gel dip coating method
Published in Materials science in semiconductor processing (01-10-2015)“…Deteriorated crystallite size of the cerianite phase of cerium dioxide thin films prepared by ethanolic sol was restored via annealing. Degree of restoring was…”
Get full text
Journal Article -
5
Electrical and photovoltaic properties of Cr/Si Schottky diodes
Published in International journal of hydrogen energy (01-06-2009)“…The electrical properties of the Cr/p-Si(111) and Cr/n-Si(100) junctions were investigated through capacitance–voltage and current–voltage measurements,…”
Get full text
Journal Article Conference Proceeding -
6
Excess current/capacitance observation on polymer–fullerene bulk heterojunction, studied through I–V and C/G–V measurements
Published in Solar energy materials and solar cells (01-08-2012)“…Excess current/capacitance behavior was observed on the Ag:Ca/P3HT:PCBM/PEDOT:PSS/ITO structure and the associated mechanism(s) were identified by performing…”
Get full text
Journal Article -
7
Structural Modification of Sol-Gel Synthesized V 2 O 5 and TiO 2 Thin Films with/without Erbium Doping
Published in Advances in materials science and engineering (2014)“…Comparative work of with/without erbium- (Er-) doped vanadium pentoxide (V 2 O 5 ) and titanium dioxide (TiO 2 ) thin films were carried out via sol-gel…”
Get full text
Journal Article -
8
Structural Modification of Sol-Gel Synthesized V2 O5 and TiO2 Thin Films with/without Erbium Doping
Published in Advances in materials science and engineering (01-01-2014)“…Comparative work of with/without erbium- (Er-) doped vanadium pentoxide (V sub(2) O sub(5) ) and titanium dioxide (TiO sub(2) ) thin films were carried out via…”
Get full text
Journal Article -
9
Structural and interfacial properties of large area n-a-Si:H/i-a-Si:H/p-c-Si heterojunction solar cells
Published in Materials science in semiconductor processing (01-06-2014)“…Growth of hydrogenated amorphous silicon in a doping inversed silicon heterojunction solar cell (n-a-Si:H/i-a-Si:H/p-c-Si) interface was investigated by High…”
Get full text
Journal Article -
10
Surface characterization of β-FeSi2/Si heterojunctions prepared by magnetron sputtering
Published in Surface & coatings technology (05-08-2007)“…beta-FeSi2 thin films were grown on Si(100) and Si(111) substrates at room temperature by magnetron sputtering and beta-FeSi2/Si heterojunctions were thus…”
Get full text
Conference Proceeding Journal Article -
11
Surface characterization of β-FeSi 2/Si heterojunctions prepared by magnetron sputtering
Published in Surface & coatings technology (2007)“…β-FeSi 2 thin films were grown on Si(100) and Si(111) substrates at room temperature by magnetron sputtering and β-FeSi 2/Si heterojunctions were thus…”
Get full text
Journal Article -
12
Excess Capacitance Due to Minority Carrier Injection in CrSi 2 /p-Type Crystalline Si Isotype Junction
Published in Japanese Journal of Applied Physics (01-09-2010)“…Excess current and capacitance phenonema were observed for the first time on a CrSi 2 /p-type crystalline silicon junction produced by cathodic arc physical…”
Get full text
Journal Article -
13
Transport and storage properties of CrSi sub(2/Si junctions made using the CAPVD technique)
Published in Materials science in semiconductor processing (01-12-2010)“…p-CrSi sub(2/n-crystSi and p-CrSi) sub(2)/p-crystSi hetero junctions produced by cathodic arc physical vapor deposition were worked out by means of…”
Get full text
Journal Article -
14
Transport and storage properties of CrSi 2/Si junctions made using the CAPVD technique
Published in Materials science in semiconductor processing (2010)“…p-CrSi 2/n-crystSi and p-CrSi 2/p-crystSi hetero junctions produced by cathodic arc physical vapor deposition were worked out by means of…”
Get full text
Journal Article -
15
Transport and storage properties of CrSi2/Si junctions made using the CAPVD technique
Published in Materials science in semiconductor processing (01-12-2010)Get full text
Journal Article -
16
Excess Capacitance Due to Minority Carrier Injection in CrSi2/p-Type Crystalline Si Isotype Junction
Published in Jpn J Appl Phys (01-09-2010)“…Excess current and capacitance phenonema were observed for the first time on a CrSi 2 /p-type crystalline silicon junction produced by cathodic arc physical…”
Get full text
Journal Article -
17
Correlation of DC and AC electrical properties of Al/p-Si structure by I– V– T and C( G/ ω)– V– T measurements
Published in Materials science in semiconductor processing (01-08-2009)“…Current–voltage–temperature and admittance-gate bias–temperature measurements were performed on Al/p-Si structure to investigate transport and storage…”
Get full text
Journal Article