Search Results - "Kurtz, Elisabeth"

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  1. 1

    ‘Pre-launch’ finite element analysis of a short-stem total hip arthroplasty system consisting of two implant types by Lerch, Matthias, Windhagen, Henning, Kurtz, Agnes-Elisabeth, Budde, Stefan, Behrens, Bernd-Arno, Bouguecha, Anas, Almohallami, Amer

    Published in Clinical biomechanics (Bristol) (01-01-2019)
    “…We applied a previously established and validated numerical model to a novel short-stemmed implant for a ‘pre-launch’ investigation. The implant system…”
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    Journal Article
  2. 2

    Low stacking-fault density in ZnSe epilayers directly grown on epi-ready GaAs substrates without GaAs buffer layers by Hong, Soon-Ku, Kurtz, Elisabeth, Chang, Ji-Ho, Hanada, Takashi, Oku, Masaoki, Yao, Takafumi

    Published in Applied physics letters (08-01-2001)
    “…We report a remarkably low stacking-fault density in ZnSe epilayers directly grown on commercial epi-ready GaAs (001) substrates without GaAs buffer layer…”
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    Journal Article
  3. 3

    CdSe quantum islands in ZnSe: a new approach by Kurtz, E, Dal Don, B, Schmidt, M, Kalt, H, Klingshirn, C, Litvinov, D, Rosenauer, A, Gerthsen, D

    Published in Thin solid films (03-06-2002)
    “…While providing a general overview over the current status of self-organization of quantum islands in the II–VI semiconductor system, with the main focus on…”
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    Journal Article Conference Proceeding
  4. 4

    Correlation of surface chemistry of GaAs substrates with growth mode and stacking fault density in ZnSe epilayers by Hong, Soon-Ku, Chang, Ji-Ho, Hanada, Takashi, Kurtz, Elisabeth, Oku, Masaoki, Yao, Takafumi

    “…We report on the correlation of surface chemistry of GaAs substrates with growth mode and stacking fault density in ZnSe epilayers. High quality ZnSe epilayers…”
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    Journal Article
  5. 5

    Growth and time-resolved photoluminescence study of self-organized CdSe quantum dots in ZnSe by Kurtz, E., Sekiguchi, T., Zhu, Z., Yao, T., Shen, J.X., Oka, Y., Shen, M.Y., Goto, T.

    Published in Superlattices and microstructures (01-01-1999)
    “…Employing two different growth methods: standard molecular beam epitaxy (MBE) and low-temperature atomic layer epitaxy (ALE) with subsequent annealing, we have…”
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    Journal Article