Search Results - "Kurpas, Paul"

Pioneering evaluation of GaN transistors in geostationary satellites by Mostardinha, Hugo, Matos, Diogo, Carvalho, Nuno Borges, Sampaio, Jorge, Pinto, Marco, Gonçalves, Patricia, Sousa, Tiago, Kurpas, Paul, Wuerfl, Joachim, Barnes, Andrew, Garat, François, Poivey, Christian

“…In this paper, we present the results of a 6-year experiment in space that studied the effects of radiation in Gallium Nitride (GaN) electronics in…”
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A flexible GaN MMIC enabling digital power amplifiers for the future wireless infrastructure by Wentzel, Andreas, Chevtchenko, Serguei, Kurpas, Paul, Heinrich, Wolfgang

“…This paper presents a GaN power-switch MMIC and demonstrates its potential and its versatility in realizing power amplifier (PA) modules for future LTE base…”
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A dual-band voltage-mode class-D PA for 0.8/1.8 GHz applications by Wentzel, Andreas, Chevtchenko, Serguei, Kurpas, Paul, Heinrich, Wolfgang

“…This paper presents a compact dual-band voltage-mode class-D power amplifier module suitable for the LTE frequency bands at 0.8 GHz and 1.8 GHz. It uses a…”
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Investigation of breakdown and DC behavior in HBTs with (Al,Ga)As collector layer by Maassdorf, A., Kurpas, P., Brunner, F., Weyers, M., Trankle, G.

“…We report on the realization of an InGaP-GaAs-based double heterojunction bipolar transistor with high breakdown voltages of up to 85 V using an Al/sub…”
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Measurement uncertainties due to non-ideal calibration standards for unknown thru calibration by Lenk, Friedrich, Doerner, Ralf, Kurpas, Paul, Rumiantsev, Andrej

“…In this paper an analytical derivation of vector network analyzer (VNA) measurement uncertainties due to non-ideal calibration standards for unknown thru…”
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Degradation properties of MOVPE-grown GaInP/GaAs HBTs under combined temperature and current stressing by Würfl, Joachim, Kurpas, Paul, Brunner, Frank, Mai, Michael, Rudolph, Matthias, Weyers, Markus

“…Reliability tests at different ambient temperatures and biasing conditions have been performed on GaInP/GaAs heterojunction bipolar transistors. The epitaxial…”
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Enabling GaN high speed devices: Microwave meets power electronics - And vice versa by Wurfl, Joachim, Hilt, Oliver, Bahat-Treidel, Eldad, Kurpas, Paul, Chevchenko, Sergei A., Bengtsson, Olof, Ersoy, Erhan, Liero, Armin, Wentzel, Andreas, Heinrich, Wolfgang, Badawi, Nasser, Dieckerhoff, Sibylle

“…GaN devices are getting highly mature in the field of microwave electronics covering power applications at frequencies ranging from a few 100 MHz to almost 100…”
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Discrete tunable RF-power GaN-BST transistors by Bengtsson, O., Maune, H., Golden, F., Chevtchenko, S., Sazegar, M., Kurpas, P., Wiens, A., Jakoby, R., Heinrich, W.

“…In this work the current status of a novel Barium-Strontium-Titanate (BST) based discrete tunable RF-power GaN-HEMT transistor is presented. A π-design…”
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Discrete tunable RF-power GaN-BST transistors by Bengtsson, O., Maune, H., Golden, F., Chevtchenko, S., Sazegar, M., Kurpas, P., Wiens, A., Jakoby, R., Heinrich, W.

“…In this work the current status of a novel Barium-Strontium-Titanate (BST) based discrete tunable RF-power GaN-HEMT transistor is presented. A π-design…”
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Current gain collapse in HBTs analysed by transient interferometric mapping method by Bychikhin, S., Dubec, V., Kuzmik, J., Wurfl, J., Kurpas, P., Teyssier, J.-P., Pogany, D.

“…Thermal distribution during a current gain collapse event is investigated in multi-finger InGaP/GaAs HBTs using the transient interferometric mapping method…”
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