Search Results - "Kurotsuchi, K."
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2.8-GB/s-write and 670-MB/s-erase operations of a 3D vertical chain-cell-type phase-change-memory array
Published in 2015 Symposium on VLSI Technology (VLSI Technology) (01-06-2015)“…A high-programming-throughput three-dimensional (3D) vertical chain-cell-type phase-change memory (VCCPCM) array for a next-generation storage device was…”
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Conference Proceeding Journal Article -
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Phase change RAM operated with 1.5-V CMOS as low cost embedded memory
Published in Proceedings of the IEEE 2005 Custom Integrated Circuits Conference, 2005 (2005)“…This paper describes a phase change (PC) RAM operated at the lowest possible voltage, 1.5 V, with a CMOS memory array, using PC material with the lowest RESET…”
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Conference Proceeding
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Doped In-Ge-Te Phase Change Memory Featuring Stable Operation and Good Data Retention
Published in 2007 IEEE International Electron Devices Meeting (01-12-2007)“…We have fabricated a phase change memory using doped In-Ge-Te to improve the data retention required for industrial and automotive use. This chalcogenide…”
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Conference Proceeding -
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Phase-change memory driven by poly-Si MOS transistor with low cost and high-programming gigabyte-per-second throughput
Published in 2011 Symposium on VLSI Technology - Digest of Technical Papers (01-06-2011)“…A phase-change memory (PCM) driven by poly-Si MOS transistors was fabricated. The thin phase-change-material layer deposited directly on the channel silicon…”
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Conference Proceeding -
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Vision-based autonomous micro-air-vehicle control for odor source localization
Published in 2016 23rd International Conference on Mechatronics and Machine Vision in Practice (M2VIP) (01-11-2016)“…This paper presents a novel control method for autonomous-odor-source localization using vision and odor sensing by micro air vehicles (MAVs). Our method is…”
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Conference Proceeding -
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Cross-point phase change memory with 4F2 cell size driven by low-contact-resistivity poly-Si diode
Published in 2009 Symposium on VLSI Technology (01-06-2009)“…We have fabricated the cross-point phase change memory with a selection diode made of poly-Si. The selection diode was fabricated using a low-thermal-budget…”
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Conference Proceeding -
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Measurement method for transient programming current of 1T1R phase-change memory
Published in 2006 IEEE International Conference on Microelectronic Test Structures (2006)“…This paper presents a measurement method for 1 transistor-1 resistance (1T1R), phase-change memory (PCM) devices. We fabricated a novel PCM test structure with…”
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Conference Proceeding -
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Ta2O5 Interfacial Layer between GST and W Plug enabling Low Power Operation of Phase Change Memories
Published in 2006 International Electron Devices Meeting (01-12-2006)“…A novel memory cell for phase-change memories (PCMs) that enables low-power operation has been developed. Power (i.e., current and voltage) for the cell is…”
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Conference Proceeding -
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A GeSbTe phase-change memory cell featuring a tungsten heater electrode for low-power, highly stable, and short-read-cycle operations
Published in IEEE International Electron Devices Meeting 2003 (2003)“…This paper presents a GeSbTe memory cell with a tungsten heater electrode. The cell has the lowest reset current (50 /spl mu/A) ever reported for a…”
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Conference Proceeding -
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Oxygen-doped gesbte phase-change memory cells featuring 1.5 V/100-/spl mu/A standard 0.13/spl mu/m CMOS operations
Published in IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest (2005)“…We demonstrated the operation of phase-change memory cells that enabled 1.5-V/100-muA programming through a tungsten-bottom-electrode contact with a diameter…”
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Conference Proceeding