Search Results - "Kuroiwa, Takeharu"

Magnetically pinned ring dots for spin valve or magnetic tunnel junction memory cells by Nakatani, Ryoichi, Yoshida, Tetsuo, Endo, Yasushi, Kawamura, Yoshio, Yamamoto, Masahiko, Takenaga, Takashi, Aya, Sunao, Kuroiwa, Takeharu, Beysen, Sadeh, Kobayashi, Hiroshi

“…Ni–Fe/Mn–Ir asymmetric ring dots with partially planed outer sides are investigated in order to confirm a method for obtaining pinned layers in magnetic…”
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13 kV SiC-DMOSFETs and body diodes for HVDC MMC converters by Nakayama, Koji, Kuroiwa, Takeharu, Yamaguchi, Hiroshi

“…Abstract Power electronics utilizing SiC power devices will become key components in next-generation power systems based on renewable energy, which are…”
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PREPARATION OF Bi3.25+xLa0.75Ti3O12+y FILMS ON RUTHENIUM ELECTRODES by Sato, T, Kuroiwa, T, Sugahara, K, Ishiwara, H

“…Bi3.25+xLa0.75Ti3O12+y (BLT) films were prepared on Ru electrodes by the sol-gel spin-coating method. The samples crystallized at 650 C in O2 atmosphere and…”
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Fatigueless Ferroelectric Capacitors with Ruthenium Bottom and Top Electrodes Formed by Metalorganic Chemical Vapor Deposition by Furukawa, Taisuke, Kuroiwa, Takeharu, Fujisaki, Yoshihisa, Sato, Takehiko, Ishiwara, Hiroshi

“…Ferroelectric Ru/Bi 4- x La x Ti 3 O 12 /Ru capacitors were fabricated by combining metalorganic chemical vapor deposition (MOCVD) of top and bottom Ru…”
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Dielectric relaxation of (Ba, Sr)TiO3 thin films by HORIKAWA, T, MAKITA, T, KUROIWA, T, MIKAMI, N

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Influence of SiC epitaxial wafer quality on yield of 1.2kV SiC-DMOSFETs by Senzaki, Junji, Kosugi, Ryoji, Masumoto, Keiko, Mitani, Takeshi, Kuroiwa, Takeharu, Yamaguchi, Hiroshi

“…This work presents the influence of SiC epitaxial wafer quality on yield of 1.2kV SiC-DMOSFETs. Various wafer quality indicators were estimated by an…”
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Dielectric properties of (BaxSr1-x)TiO3 thin films prepared by RF sputtering for dynamic random access memory application by KUROIWA, T, TSUNEMINE, Y, HORIKAWA, T, MAKITA, T, TANIMURA, J, MIKAMI, N, SATO, K

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EFFECTS OF OXYGEN VACANCY DIFFUSION ON LEAKAGE CHARACTERISTICS OF Pt/(Ba0.5Sr0.5)TiO3/Pt CAPACITOR by Maruno, S, Murao, T, Kuroiwa, T, Mikami, N, Tomikawa, A, Nagata, M

“…Authors investigated leakage characteristics of Pt/(Ba0.5Sr0.5)TiO3(BST)/Pt capacitors by measuring current-voltage characteristics during annealing in vacuum…”
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Electric properties of SrTiO3 thin films prepared by RF sputtering by KUROIWA, T, HONDA, T, WATARAI, H, SATO, K

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High Speed, Low Loss and Energy Recovery in Pulsed Power Circuit Using Ultra-High Voltage SiC Devices by Sasaki, Reo, Yamada, Yusei, Sakugawa, Takashi, Sakamoto, Kunihiro, Kuroiwa, Takeharu

“…Ultra-high voltage SiC devices were used as the switching device in pulsed power circuits. It is hard to realize both high breakdown voltage and fast…”
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Influence of buffer layers and barrier metals on properties of (Ba, Sr)TiO3 films prepared by liquid source chemical vapor deposition by KAWAHARA, T, YAMAMUKA, M, TANIMURA, J, TARUTANI, M, KUROIWA, T, HORIKAWA, T, ONO, K

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Improved fabrication process for Ru/BST/Ru capacitor by liquid source chemical vapor deposition by Tarutani, Masayoshi, Yamamuka, Mikio, Takenaga, Takashi, Kuroiwa, Takeharu, Horikawa, Tsuyoshi

“…We have investigated (Ba,Sr)TiO 3 (BST) films grown on Ru by a liquid source chemical vapor deposition (CVD). Inductively coupled plasma mass spectrometry…”
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High-temperature operations of rotation angle sensors with spin-valve-type magnetic tunnel junctions by Takenaga, T., Sadeh, B., Kuroiwa, T., Kobayashi, H., Oomori, T.

“…Direction detection of a magnetic field by spin-valve-type magnetic tunnel junction (MTJ) has been investigated at temperatures ranging from room to 150/spl…”
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Chemical Vapor Deposition of Ru Bottom Electrode for Ferroelectric Bi4 − x La x Ti3O12 Capacitors by Furukawa, Taisuke, Kuroiwa, Takeharu, Fujisaki, Yoshihisa, Sato, Takehiko, Ishiwara, Hiroshi

“…Ruthenium films formed by metalorganic chemical vapor deposition were investigated, taking account of the application to the bottom electrode of ferroelectric…”
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Chemical Vapor Deposition of Ru Bottom Electrode for Ferroelectric Bi 4 − x La x Ti 3 O 12 Capacitors by Furukawa, Taisuke, Kuroiwa, Takeharu, Fujisaki, Yoshihisa, Sato, Takehiko, Ishiwara, Hiroshi

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Preparation of Bi 3.25+ x La 0.75 Ti 3 O 12+ y Films on Ruthenium Electrodes by Sato, Takehiko, Kuroiwa, Takeharu, Sugahara, Kazuyuki, Ishiwara, Hiroshi

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Read-cycle endurance of magnetic random access memory elements by Kuroiwa, T., Takenaga, T., Sadeh, B., Kobayashi, H., Sato, K.

“…The read-cycle endurance of a magnetic tunneling junction (MTJ) has been investigated, focusing on the spin-dependent tunneling current at high temperatures…”
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Chemical Vapor Deposition of Ru Bottom Electrode for Ferroelectric Bi 4 - x La x Ti 3 O 12 Capacitors by Furukawa, Taisuke, Kuroiwa, Takeharu, Fujisaki, Yoshihisa, Sato, Takehiko, Ishiwara, Hiroshi

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Effects of Oxygen Vacancy Diffusion on Leakage Characteristics of Pt/(Ba 0.5 Sr 0.5 )TiO 3 /Pt Capacitor by Maruno, Shigemitsu, Murao, Takeshi, Kuroiwa, Takeharu, Mikami, Noboru, Tomikawa, Akihiko, Nagata, Michihiko, Yasue, Tsuneo, Koshikawa, Takanori

“…We investigated leakage characteristics of Pt/(Ba 0.5 Sr 0.5 )TiO 3 (BST)/Pt capacitors by measuring current-voltage characteristics during annealing in vacuum…”
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Dielectric Relaxation of (Ba, Sr)TiO 3 Thin Films by Horikawa, Tsuyoshi, Makita, Tetsuro, Kuroiwa, Takeharu, Noboru Mikami, Noboru Mikami

“…The dielectric relaxation of (Ba 0.5 Sr 0.5 )TiO 3 thin films with high electric resistivity is investigated. The films are deposited by an rf-magnetron…”
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