Search Results - "Kurmashev, Sh. D."

Degradation of the parameters of transistor temperature sensors under the effect of ionizing radiation by Vikulin, I. M., Gorbachev, V. E., Kurmashev, Sh. D.

“…The influence of the effective concentration of an impurity specifying the conduction type of the base region and the base thickness on the radiation…”
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Frequency-output sensors-transducers based on unijunction transistors by Vikulin, I. M., Kurmashev, Sh. D., Vikulina, L. F., Stafeev, V. I.

“…The experimental characteristics of sensors of nonelectrical quantities (temperature, magnetic field, light, and pressure) based on a unijunction transistor…”
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Increasing the radiation resistance of single-crystal silicon epitaxial layers by Kurmashev, Sh. D., Kulinich, O. A., Brusenskaya, G. I., Verem’eva, A. V.

“…The authors investigate the possibility of increasing the radiation resistance of silicon epitaxial layers by creating radiation defects sinks in the form of…”
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Injection-based photodetectors by Vikulin, I. M., Kurmashev, Sh. D., Stafeev, V. I.

“…Physical principles of the operation of injection-based photodiodes are generalized. The unified approach to studying the photoelectric phenomena with the…”
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Method of defence of solder surface from oxidization by Kurmashev Sh. D., Lavrenova T. I., Bugajova T. N.

“…Compositions are developed for defence of fusion solder from oxidization on the basis of mixture of glycerin, urea and powders of refractory oxides, carbides…”
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Influence of heat treatment on the surface barrier parameters of Ni-n-Si structures obtained by the method of electric explosion of a metal by Vikulin, I. M., Kurmashev, Sh. D., Gin'ko, V. I., Andreev, V. I.

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The sensitivity of photovoltaic cells based on cadmium sulfide in the short-wave region of the spectrum by Drozdov, V. A., Kurmashev, Sh. D., Rvachev, A. L.

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