Search Results - "Kuritsin, D. I."

Optically pumped stimulated emission in HgCdTe-based quantum wells: Toward continuous wave lasing in very long-wavelength infrared range by Rumyantsev, V. V., Mazhukina, K. A., Utochkin, V. V., Kudryavtsev, K. E., Dubinov, A. A., Aleshkin, V. Ya, Razova, A. A., Kuritsin, D. I., Fadeev, M. A., Antonov, A. V., Mikhailov, N. N., Dvoretsky, S. A., Gavrilenko, V. I., Teppe, F., Morozov, S. V.

“…Amplified interband emission within the 14–24 μm range is investigated in HgCdTe-based quantum wells under optical pumping. Carrier lifetimes are shown to be…”
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Terahertz Emission from HgCdTe QWs under Long-Wavelength Optical Pumping by Rumyantsev, V. V., Fadeev, M. A., Aleshkin, V. Ya, Dubinov, A. A., Utochkin, V. V., Antonov, A. V., Ryzhov, D. A., Kuritsin, D. I., Gavrilenko, V. I., Krasilnik, Z. F., Sirtori, C., Teppe, F., Mikhailov, N. N., Dvoretsky, S. A., Morozov, S. V.

“…Currently semiconductor lasers in the wavelength range from 20 to 60 μm are scarce. HgTe/CdHgTe heterostructures is a potential basis for alternative sources…”
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Long wavelength superluminescence from narrow gap HgCdTe epilayer at 100 K by Morozov, S. V., Rumyantsev, V. V., Dubinov, A. A., Antonov, A. V., Kadykov, A. M., Kudryavtsev, K. E., Kuritsin, D. I., Mikhailov, N. N., Dvoretskii, S. A., Gavrilenko, V. I.

“…Experimental evidence of long wavelength superluminescence (SL), i.e., amplification of spontaneous emission, in narrow gap HgCdTe bulk epitaxial film at 100 K…”
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Low-temperature photoluminescence in holmium-doped silicon by Andreev, B. A., Sobolev, N. A., Nikolaev, Yu. A., Kuritsin, D. I., Makovijchuk, M. I., Parshin, E. O.

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Optically Pumped Stimulated Emission in HgCdTe-based Quantum Wells: Toward Continuous Wave Lasing in Very Long-wavelength Infrared Range by Rumyantsev, V. V., Mazhukina, K. A., Utochkin, V. V., Dubinov, A. A., Aleshkin, V. Ya, Fadeev, M. A., Kuritsin, D. I., Kudryavtsev, K. E., Razova, A. A., Mikhailov, N. N., Dvoretsky, S. A., Gavrilenko, V. I., Morozov, S. V.

“…Stimulated emission (SE) via interband transitions is investigated in HgCdTe-based quantum wells under optical pumping within the 14-24 μm range. Carrier…”
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