Search Results - "Kuranouchi, A."

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  1. 1
    Formation of ultrashallow p+ layers in silicon by thermal diffusion of boron and by subsequent rapid thermal annealing

    Formation of ultrashallow p+ layers in silicon by thermal diffusion of boron and by subsequent rapid thermal annealing by INADA, T, KURANOUCHI, A, HIRANO, H, NAKAMURA, T, KIYOTA, Y, ONAI, T

    Published in Applied physics letters (22-04-1991)
    “…Boron atoms are incorporated into (100)Si wafers by heating the substrates at 800 °C for 30 min in a (B2H6+H2) atmosphere and by subsequent rapid thermal…”
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  2. 2
    Ultra-thin-base Si bipolar transistor using rapid vapor-phase direct doping (RVD)

    Ultra-thin-base Si bipolar transistor using rapid vapor-phase direct doping (RVD) by Kiyota, Y., Onai, T., Nakamura, T., Inada, T., Kuranouchi, A., Hirano, Y.

    Published in IEEE transactions on electron devices (01-09-1992)
    “…A novel doping method called rapid vapor-phase direct doping (RVD) is developed to form ultra-shallow junctions. The base region of a conventional bipolar…”
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  3. 3
    101 GHz f/sub Tmax/ SiGe:C HBT integrated into 0.25 /spl mu/m CMOS with conventional LOCOS isolation

    101 GHz f/sub Tmax/ SiGe:C HBT integrated into 0.25 /spl mu/m CMOS with conventional LOCOS isolation by Yamagata, H., Yanagawa, S., Komoto, T., Bairo, M., Kiyota, Y., Yoneda, S., Oishi, M., Kuranouchi, A., Arai, C.

    “…A low-complexity but high-performance SiGe:C BiCMOS technology is realized by conventional simple LOCOS isolation and non-selective SiGe:C epitaxy with…”
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