Search Results - "Kurai, Satoshi"

Optical characterization of point defects on internal quantum efficiency in AlGaN quantum wells grown on face-to-face-annealed sputtered AlN templates by Kurai, Satoshi, Fujii, Megumi, Ohnishi, Yuta, Oshimura, Ryota, Inai, Kosuke, Himeno, Kunio, Okada, Narihito, Uesugi, Kenjiro, Miyake, Hideto, Yamada, Yoichi

“…The correlation between the internal quantum efficiency (IQE) and the effective diffusion length estimated by the cathodoluminescence intensity line profile…”
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Effects of GaN cap layer thickness on photoexcited carrier density in green luminescent InGaN multiple quantum wells by Murotani, Hideaki, Nakatsuru, Keigo, Kurai, Satoshi, Okada, Narihito, Yano, Yoshiki, Koseki, Shuichi, Piao, Guanxi, Yamada, Yoichi

“…Abstract The effects of GaN cap layers on the optical properties of green luminescent InGaN-based multiple quantum wells were studied by photoluminescence (PL)…”
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Separation of effects of InGaN/GaN superlattice on performance of light-emitting diodes using mid-temperature-grown GaN layer by Sugimoto, Kohei, Okada, Narihito, Kurai, Satoshi, Yamada, Yoichi, Tadatomo, Kazuyuki

“…We evaluated the electrical properties of InGaN-based light-emitting diodes (LEDs) with a superlattice (SL) layer or a mid-temperature-grown GaN (MT-GaN) layer…”
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Potential Barrier Formed Around Dislocations in InGaN Quantum Well Structures by Spot Cathodoluminescence Measurements by Kurai, Satoshi, Higaki, Shota, Imura, Nobuto, Okawa, Kohei, Makio, Ryoga, Okada, Narihito, Tadatomo, Kazuyuki, Yamada, Yoichi

“…We carried out spot cathodoluminescence (CL) with scanning electron microscopy (SEM‐CL) of InGaN multiple quantum well (MQW) structures with an In molar…”
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Analysis of efficiency curves in near-UV, blue, and green-emitting InGaN-based multiple quantum wells using rate equations of exciton recombination by Murotani, Hideaki, Shibuya, Kazunori, Yoneda, Ayumu, Hashiguchi, Yuki, Miyoshi, Hiroyuki, Kurai, Satoshi, Okada, Narihito, Tadatomo, Kazuyuki, Yano, Yoshiki, Tabuchi, Toshiya, Matsumoto, Koh, Yamada, Yoichi

“…The internal quantum efficiency (IQE) of near-UV, blue, and green-emitting InGaN-based multiple quantum wells was evaluated as functions of excitation power…”
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Temperature Dependence of Stokes Shifts of Excitons and Biexcitons in Al0.61Ga0.39N Epitaxial Layer by Murotani, Hideaki, Ikeda, Kazuki, Tsurumaru, Takuto, Fujiwara, Ryota, Kurai, Satoshi, Miyake, Hideto, Hiramatsu, Kazumasa, Yamada, Yoichi

“…Excitonic optical properties of an Al0.61Ga0.39N epitaxial layer are studied by using photoluminescence (PL) and PL excitation (PLE) spectroscopy. The peak…”
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Spatially Resolved Spectroscopy of Blue and Green InGaN Quantum Wells by Scanning Near‐Field Optical Microscopy by Kurai, Satoshi, Mihara, Renma, Nobata, Genki, Okawa, Kohei, Okada, Narihito, Tadatomo, Kazuyuki, Yano, Yoshiki, Tabuchi, Toshiya, Matsumoto, Koh, Yamada, Yoichi

“…We investigated nanoscopic spectroscopy of blue and green InGaN multiple quantum wells (MQWs) by scanning near‐field optical microscopy (SNOM). The…”
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Cathodoluminescence study on local high-energy emissions at dark spots in AlGaN/AlGaN multiple quantum wells by Kurai, Satoshi, Imura, Nobuto, Jin, Li, Miyake, Hideto, Hiramatsu, Kazumasa, Yamada, Yoichi

“…We investigated the spatial distribution of luminescence near threading dislocations in AlGaN/AlGaN multiple quantum wells (MQWs) by cathodoluminescence…”
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Cathodoluminescence Study of Optical Inhomogeneity in Si-Doped AlGaN Epitaxial Layers Grown by Low-Pressure Metalorganic Vapor-Phase Epitaxy by Kurai, Satoshi, Ushijima, Fumitaka, Yamada, Yoichi, Miyake, Hideto, Hiramatsu, Kazumasa

“…We have investigated the effects of Si doping on the microscopic optical inhomogeneity of Al 0.61 Ga 0.39 N epitaxial layers through the combined use of…”
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Direct Evidence that Dislocations are Non-Radiative Recombination Centers in GaN by Sugahara, Tomoya, Sato, Hisao, Hao, Maosheng, Naoi, Yoshiki, Kurai, Satoshi, Tottori, Satoru, Yamashita, Kenji, Nishino, Katsushi, Romano, Linda T., Sakai, Shiro

“…Plan-view transmission electron microscopy (TEM) and cathodoluminescence (CL) images were taken for the same sample at exactly the same location in n-type GaN…”
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A novel colonoscope with high color–rendering white light–emitting diodes by Nishikawa, Jun, MD, PhD, Yanai, Hideo, MD, PhD, Okamoto, Takeshi, MD, PhD, Higaki, Shingo, MD, PhD, Hashimoto, Shinichi, MD, PhD, Kurai, Satoshi, PhD, Sakaida, Isao, MD, PhD

“…Background Light-emitting diodes (LEDs) are being used for a variety of new uses because of their cost-effectiveness and durability. We therefore considered…”
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Elimination of V‐Shaped Pits in Thick InGaN Layers via Ammonia‐Assisted Face‐to‐Face Annealing by Nakata, Atsuto, Sasaki, Ayano, Kurai, Satoshi, Okada, Narihito, Yamada, Yoichi

“…InGaN, a group‐III nitride semiconductor, is expected to be widely used in the field of optoelectronics, owing to its excellent physical properties. However,…”
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Growth and Luminescence Properties of Subsequently Grown AlInN Layers on AlN Homoepitaxial Layers by Ammonia Gas Source Molecular Beam Epitaxy by Iwata, Shiro, Nanjo, Yoshiyuki, Okuno, Toshihiro, Kurai, Satoshi, Taguchi, Tsunemasa

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Control of Polarity of AlN Grown on Sapphire Substrate and Growth with Both Al‐ and N‐Polarities by Tanigawa, Shunsuke, Sakoyama, Takuya, Kurai, Satoshi, Okada, Narihito, Yamada, Yoichi

“…AlN with both Al‐ and N‐polarities in the c‐axis direction has attracted attention as a second‐harmonic generation device with a quasi‐phase‐matching structure…”
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Nucleation control in the growth of bulk GaN by sublimation method by KURAI, S, NISHINO, K, SAKAI, S

“…Nucleation of GaN crystallites by sublimation method on sapphire (0001), scratched sapphire (0001), SiO 2 , Si (111), and metalorganic chemical vapor…”
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Photopumped stimulated emission from homoepitaxial GaN grown on bulk GaN prepared by sublimation method by KURAI, S, NAOI, Y, ABE, T, OHMI, S, SAKAI, S

“…We have observed stimulated emission at room temperature from a photopumped homoepitaxial GaN for the first time. A homoepitaxial layer was grown by…”
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Effect of Cooling Process after GaN Epitaxial Growth by Radio-Frequency Molecular Beam Epitaxy by Shuichi Kubo, Shuichi Kubo, Satoshi Kurai, Satoshi Kurai, Tsunemasa Taguchi, Tsunemasa Taguchi

“…The effect of carrying out a cooling process after GaN epitaxial growth by radio-frequency molecular beam epitaxy (RF-MBE) has been investigated. Nitrogen…”
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Temperature‐ and Excitation Power Density‐Resolved Photoluminescence of AlGaN‐Based Multiple Quantum Wells Emitting in the Spectral Range of 220–260 nm by Murotani, Hideaki, Inai, Kosuke, Himeno, Kunio, Tani, Kaichi, Hayashi, Hiromasa, Kurai, Satoshi, Okada, Narihito, Uesugi, Kenjiro, Miyake, Hideto, Yamada, Yoichi

“…Internal quantum efficiency (IQE) of AlGaN‐based multiple quantum wells (MQWs) on face‐to‐face‐annealed sputter‐deposited AlN templates is examined by…”
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Well Number Dependence of Internal Quantum Efficiency in AlGaN Quantum Wells on Low‐Dislocation Sputtered AlN Templates by Inai, Kosuke, Oshimura, Ryota, Himeno, Kunio, Fujii, Megumi, Onishi, Yuta, Kurai, Satoshi, Okada, Narihito, Uesugi, Kenjiro, Miyake, Hideto, Yamada, Yoichi

“…The internal quantum efficiency (IQE) and cathodoluminescence intensity line profile of AlGaN multiple quantum well (MQW) structures on low‐dislocation…”
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Temperature-dependent cathodoluminescence mapping of InGaN epitaxial layers with different In compositions by Kurai, Satoshi, Wakamatsu, Ayumu, Yamada, Yoichi

“…We performed temperature-dependent cathodoluminescence (CL) mapping of InGaN epitaxial layers, for which the presence of potential barriers around threading…”
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