Search Results - "Kuokstis, E."

III–Nitride UV Devices by Khan, M. Asif, Shatalov, M., Maruska, H. P., Wang, H. M., Kuokstis, E.

“…The need for efficient, compact and robust solid-state UV optical sources and sensors had stimulated the development of optical devices based on III–nitride…”
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Two mechanisms of blueshift of edge emission in InGaN-based epilayers and multiple quantum wells by Kuokstis, E., Yang, J. W., Simin, G., Khan, M. Asif, Gaska, R., Shur, M. S.

“…We present the results of a comparative photoluminescence (PL) study of GaN and InGaN-based epilayers, and InGaN/GaN multiple quantum wells (MQWs)…”
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Pulsed atomic-layer epitaxy of ultrahigh-quality AlxGa1−xN structures for deep ultraviolet emissions below 230 nm by Zhang, J. P., Khan, M. Asif, Sun, W. H., Wang, H. M., Chen, C. Q., Fareed, Q., Kuokstis, E., Yang, J. W.

“…In this letter, we report the pulsed atomic-layer epitaxy of ultrahigh-quality AlN epilayers and AlN/Al0.85Ga0.15N multiple quantum wells (MQWs) on basal plane…”
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Polarization effects in photoluminescence of C- and M-plane GaN/AlGaN multiple quantum wells by Kuokstis, E., Chen, C. Q., Gaevski, M. E., Sun, W. H., Yang, J. W., Simin, G., Asif Khan, M., Maruska, H. P., Hill, D. W., Chou, M. C., Gallagher, J. J., Chai, B.

“…Polarization effects have been studied in GaN/AlGaN multiple quantum wells (MQWs) with different c-axis orientation by means of excitation-dependent…”
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Role of alloy fluctuations in photoluminescence dynamics of AlGaN epilayers by Kuokstis, E., Sun, W. H., Shatalov, M., Yang, J. W., Asif Khan, M.

“…The near-band-edge (NBE) photoluminescence (PL) of AlGaN layers with different Al content was analyzed in a wide range of excitation intensities and…”
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Photoluminescence dynamics of AlGaN quantum wells with built-in electric fields and localized states by Mickevičius, J., Kuokštis, E., Liuolia, V., Tamulaitis, G., Shur, M. S., Yang, J., Gaska, R.

“…We report on photoluminescence (PL) studies of AlGaN/AlGaN multiple quantum well (MQW) structures with well widths spanning from 1.65 to 5.0 nm under various…”
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Pulsed atomic layer epitaxy of quaternary AlInGaN layers by Zhang, J., Kuokstis, E., Fareed, Q. , Wang, H., Yang, J. , Simin, G., Khan, M. Asif, Gaska, R., Shur, M.

“…In this letter, we report on a material deposition scheme for quaternary AlxInyGa1−x–yN layers using a pulsed atomic layer epitaxy (PALE) technique. The PALE…”
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Near-band-edge photoluminescence of wurtzite-type AlN by Kuokstis, E., Zhang, J., Fareed, Q., Yang, J. W., Simin, G., Khan, M. Asif, Gaska, R., Shur, M., Rojo, C., Schowalter, L.

“…Temperature-dependent photoluminescence (PL) measurements were performed for A-plane and C-plane bulk AlN single crystals and epitaxial layers on sapphire. A…”
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Deep-ultraviolet emission of AlGaN/AlN quantum wells on bulk AlN by Gaska, R., Chen, C., Yang, J., Kuokstis, E., Khan, A., Tamulaitis, G., Yilmaz, I., Shur, M. S., Rojo, J. C., Schowalter, L. J.

“…An approach for growing high-quality AlGaN/AlN multiple quantum wells (MQW) emitting in deep UV region is proposed. The structures are deposited on bulk AlN…”
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GaN/AlGaN multiple quantum wells on a -plane GaN pillars for stripe-geometry nonpolar ultraviolet light-emitting devices by Sun, W. H., Yang, J. W., Chen, C. Q., Zhang, J. P., Gaevski, M. E., Kuokstis, E., Adivarahan, V., Wang, H. M., Gong, Z., Su, M., Khan, M. Asif

“…We investigated the growth of GaN/Al0.20Ga0.80N multiple quantum wells (MQWs) on selective-area-grown a-plane GaN pillars over r-plane sapphire. In contrast to…”
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High-quality AlGaN layers over pulsed atomic-layer epitaxially grown AlN templates for deep ultraviolet light-emitting diodes by ZHANG, J. P, WANG, H. M, ASIF KHAN, M, SUN, W. H, ADIVARAHAN, V, WU, S, CHITNIS, A, CHEN, C. Q, SHATALOV, M, KUOKSTIS, E, YANG, J. W

“…Authors report the pulsed atomic-layer epitaxy (PALE) of ultrahigh quality AlN epilayers over basal-plane sapphire substrates and their use as templates to…”
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GaN homoepitaxy on freestanding (11̄00) oriented GaN substrates by Chen, C. Q., Gaevski, M. E., Sun, W. H., Kuokstis, E., Zhang, J. P., Fareed, R. S. Q., Wang, H. M., Yang, J. W., Simin, G., Khan, M. A., Maruska, Herbert-Paul, Hill, David W., Chou, Mitch M. C., Chai, Bruce

“…We report homoepitaxial GaN growth on freestanding (11̄00) oriented (M-plane GaN) substrates using low-pressure metalorganic chemical vapor deposition…”
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Luminescence mechanisms in quaternary AlxInyGa1−x−yN materials by Ryu, Mee-Yi, Chen, C. Q., Kuokstis, E., Yang, J. W., Simin, G., Khan, M. Asif

“…Low-temperature photoluminescence investigations have been carried out in the quaternary AlInGaN epilayers and AlInGaN/AlInGaN multiple quantum wells (MQWs)…”
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Air-bridged lateral growth of crack-free Al0.24Ga0.76N on highly relaxed porous GaN by Fareed, R. S. Qhalid, Adivarahan, V., Chen, C. Q., Rai, S., Kuokstis, E., Yang, J. W., Khan, M. Asif, Caissie, J., Molnar, R. J.

“…We report on the strain reduction in AlGaN layers grown on porous GaN (P-GaN) by metalorganic chemical vapor deposition (MOCVD). The P-GaN was obtained by…”
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Exciton and carrier motion in quaternary AlInGaN by Kazlauskas, K., Tamulaitis, G., Žukauskas, A., Khan, M. A., Yang, J. W., Zhang, J., Kuokstis, E., Simin, G., Shur, M. S., Gaska, R.

“…Temperature and excitation power dependences of the photoluminescence Stokes shift and bandwidth were studied in quaternary AlInGaN epilayers as a function of…”
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Low-temperature operation of AlGaN single-quantum-well light-emitting diodes with deep ultraviolet emission at 285 nm by Chitnis, A., Pachipulusu, R., Mandavilli, V., Shatalov, M., Kuokstis, E., Zhang, J. P., Adivarahan, V., Wu, S., Simin, G., Asif Khan, M.

“…We present a study of the electrical and optical characteristics of 285 nm emission deep ultraviolet light-emitting diodes (LED) at temperatures from 10 to 300…”
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Localization of carriers and polarization effects in quaternary AlInGaN multiple quantum wells by Kuokstis, E., Zhang, J., Ryu, M.-Y., Yang, J. W., Simin, G., Khan, M. Asif, Gaska, R., Shur, M. S.

“…We report on observing a long-wavelength band in low-temperature photoluminescence (PL) spectrum of quaternary Al0.22In0.02Ga0.76N/Al0.38In0.01Ga0.61N multiple…”
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Room-temperature optically pumped laser emission from a -plane GaN with high optical gain characteristics by Kuokstis, E., Chen, C. Q., Yang, J. W., Shatalov, M., Gaevski, M. E., Adivarahan, V., Khan, M. Asif

“…Photoluminescence (PL) and optical gain (OG) spectra of a-plane GaN layers have been analyzed over a wide range of excitation intensities. The samples were…”
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Time-resolved photoluminescence of quaternary AlInGaN-based multiple quantum wells by Ryu, Mee-Yi, Chen, C. Q., Kuokstis, E., Yang, J. W., Simin, G., Khan, M. Asif, Sim, G. G., Yu, P. W.

“…Time-resolved photoluminescence (PL) dynamics has been studied in AlInGaN/AlInGaN multiple quantum wells (MQWs) grown by a pulsed metalorganic chemical vapor…”
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Photoluminescence of GaN deposited on single-crystal bulk AlN with different polarities by Tamulaitis, G., Yilmaz, I., Shur, M. S., Gaska, R., Chen, C., Yang, J., Kuokstis, E., Khan, A., Schujman, S. B., Schowalter, L. J.

“…Photoluminescence (PL) properties of two GaN epilayers grown in identical conditions on substrates of Al face and N face of bulk single-crystal AlN are studied…”
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