Search Results - "Kuo, C.H."

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  1. 1

    Numerical modeling of non-adiabatic heat-recirculating combustors by Kuo, C.H., Ronney, P.D.

    “…A two-dimensional numerical model of spiral counterflow heat recirculating combustors was developed including the effects of temperature-dependent gas and…”
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    Journal Article
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    White-light emission from near UV InGaN-GaN LED chip precoated with blue/green/red phosphors by Sheu, J.K., Chang, S.J., Kuo, C.H., Su, Y.K., Wu, L.W., Lin, Y.C., Lai, W.C., Tsai, J.M., Chi, G.C., Wu, R.K.

    Published in IEEE photonics technology letters (01-01-2003)
    “…Phosphor-converted light-emitting diodes (LEDs) were fabricated by precoating blue/green/red phosphors onto near ultraviolate (n-UV) LED chips prior to package…”
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    High efficiency and improved ESD characteristics of GaN-based LEDs with naturally textured surface grown by MOCVD by Tsai, C.M., Sheu, J.K., Wang, P.T., Lai, W.C., Shei, S.C., Chang, S.J., Kuo, C.H., Kuo, C.W., Su, Y.K.

    Published in IEEE photonics technology letters (01-06-2006)
    “…The following paper presents a study on GaN-based light-emitting diodes (LEDs) with naturally textured surface grown by metal-organic chemical vapor…”
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    InGaN-GaN MQW LEDs with Si treatment by Hsu, Y.P., Chang, S.J., Su, Y.K., Chen, S.C., Tsai, J.M., Lai, W.C., Kuo, C.H., Chang, C.S.

    Published in IEEE photonics technology letters (01-08-2005)
    “…Surface morphologies of the metal-organic chemical vapor deposition-grown p-GaN layers with and without Si treatment were investigated by atomic force…”
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    Influence of Si-doping on the characteristics of InGaN-GaN multiple quantum-well blue light emitting diodes by Wu, L.W., Chang, S.J., Wen, T.C., Su, Y.K., Chen, J.F., Lai, W.C., Kuo, C.H., Chen, C.H., Sheu, J.K.

    Published in IEEE journal of quantum electronics (01-05-2002)
    “…A detailed study on the effects of Si-doping in the GaN barrier layers of InGaN-GaN multiquantum well (MQW) light-emitting diodes (LEDs) has been performed…”
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  8. 8

    White-light emission from InGaN-GaN multiquantum-well light-emitting diodes with Si and Zn codoped active well layer by Sheu, J.K., Pan, C.J., Chi, G.C., Kuo, C.H., Wu, L.W., Chen, C.H., Chang, S.J., Su, Y.K.

    Published in IEEE photonics technology letters (01-04-2002)
    “…Si and Zn codoped In/sub x/Ga/sub 1-x/N-GaN multiple-quantum-well (MQW) light-emitting diode (LED) structures were grown by metal-organic vapor phase epitaxy…”
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    Nitride-based LEDs with an SPS tunneling contact Layer and an ITO transparent contact by Chang, S.J., Chang, C.S., Su, Y.K., Chuang, R.W., Lai, W.C., Kuo, C.H., Hsu, Y.P., Lin, Y.C., Shei, S.C., Lo, H.M., Ke, J.C., Sheu, J.K.

    Published in IEEE photonics technology letters (01-04-2004)
    “…The indium-tin-oxide [ITO(80 nm)] and Ni(5 nm)-Au(10 nm) films were separately deposited on glass substrates, p-GaN layers, n/sup +/-InGaN-GaN…”
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    Nitride-Based Near-Ultraviolet Mesh MQW Light-Emitting Diodes by Kuo, C.H., Feng, H.C.

    Published in IEEE photonics technology letters (01-12-2007)
    “…We have demonstrated nitride-based near-ultraviolet mesh multiquantum-well (MQW) light-emitting diodes (LEDs) by etching through the MQW active region. With…”
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    Journal Article
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    Lateral epitaxial patterned sapphire InGaN/GaN MQW LEDs by Hsu, Y.P, Chang, S.J, Su, Y.K, Sheu, J.K, Lee, C.T, Wen, T.C, Wu, L.W, Kuo, C.H, Chang, C.S, Shei, S.C

    Published in Journal of crystal growth (01-02-2004)
    “…GaN epitaxial layers and InGaN/GaN multiquantum well blue light emitting diodes (LEDs) were prepared on both patterned sapphire substrates (PSS) and…”
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    Journal Article
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    400-nm InGaN-GaN and InGaN-AlGaN multiquantum well light-emitting diodes by Chang, S.J., Kuo, C.H., Su, Y.K., Wu, L.W., Sheu, J.K., Wen, T.C., Lai, W.C., Chen, J.R., Tsai, J.M.

    “…The 400-nm In/sub 0.05/Ga/sub 0.95/N-GaN MQW light-emitting diode (LED) structure and In/sub 0.05/Ga/sub 0.95/N-Al/sub 0.1/Ga/sub 0.9/N LED structure were both…”
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    Optical Simulation and Fabrication of Nitride-Based LEDs With the Inverted Pyramid Sidewalls by Kuo, C.W., Lee, Y.C., Fu, Y.K., Tsai, C.H., Wu, M.L., Chi, G.C., Kuo, C.H., Tun, C.J.

    “…In this study, the numerical and experimental demonstrations for the enhancement of light-extraction efficiency in nitride-based LEDs with randomly inverted…”
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    Nitride-based light-emitting diodes with p-AlInGaN surface layers by Kuo, C.H., Lin, C.C., Chang, S.J., Hsu, Y.P., Tsai, J.M., Lai, W.C., Wang, P.T.

    Published in IEEE transactions on electron devices (01-10-2005)
    “…We have prepared bulk p-AlInGaN layers and light-emitting diodes (LEDs) with p-AlInGaN surface layers by metal-organic chemical vapor deposition. By properly…”
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    Process characteristics of hydrolysis of chitosan in a continuous enzymatic membrane reactor by Kuo, C.H, Chen, C.C, Chang, B.H

    Published in Journal of food science (01-09-2004)
    “…Crude enzyme from Bacillus cereus NTU-FC-4 was used to hydrolyze chitosan of 66% deacetylation in a membrane reactor, operated at 45 degrees C and pH 5, to…”
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    Catalyst-free ZnO nanowires grown on a-plane GaN by Chen, C.W., Pan, C.J., Tsao, F.C., Liu, Y.L., Kuo, C.W., Kuo, C.H., Chi, G.C., Chen, P.H., Lai, W.C., Hsueh, T.H., Tun, C.J., Chang, C.Y., Pearton, S.J., Ren, F.

    Published in Vacuum (04-02-2010)
    “…ZnO nanowires were grown on a-plane GaN templates by chemical vapor deposition (CVD) without employing a catalyst. The a-plane GaN templates were pre-deposited…”
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    Si and Zn co-doped InGaN-GaN white light-emitting diodes by Chang, S.J., Wu, L.W., Su, Y.K., Kuo, C.H., Lai, W.C., Hsu, Y.P., Sheu, J.K., Chen, J.F., Tsai, J.M.

    Published in IEEE transactions on electron devices (01-02-2003)
    “…InGaN-GaN double heterostructure (DH) and multiquantum-well (MQW) light-emitting diodes (LEDs) with Si and Zn co-doped active well layers were prepared by…”
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    InGaN/GaN tunnel-injection blue light-emitting diodes by Wen, T.C., Chang, S.J., Wu, L.W., Su, Y.K., Lai, W.C., Kuo, C.H., Chen, C.H., Sheu, J.K., Chen, J.F.

    Published in IEEE transactions on electron devices (01-06-2002)
    “…A charge asymmetric resonance tunneling (CART) structure was applied to nitride-based blue light emitting diodes (LEDs) to enhance their output efficiency. It…”
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