Search Results - "Kuo, C.H."
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Numerical modeling of non-adiabatic heat-recirculating combustors
Published in Proceedings of the Combustion Institute (2007)“…A two-dimensional numerical model of spiral counterflow heat recirculating combustors was developed including the effects of temperature-dependent gas and…”
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2
Effect of Fe2O3 coating on ZnO nanowires in photoelectrochemical water splitting: A synchrotron x-ray spectroscopic and spectromicroscopic investigation
Published in Solar energy materials and solar cells (01-06-2020)“…An array of ZnO/Fe2O3 core-shell nanowires (NW) for the highly efficient absorption of light and carrier collection is developed for use in…”
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3
White-light emission from near UV InGaN-GaN LED chip precoated with blue/green/red phosphors
Published in IEEE photonics technology letters (01-01-2003)“…Phosphor-converted light-emitting diodes (LEDs) were fabricated by precoating blue/green/red phosphors onto near ultraviolate (n-UV) LED chips prior to package…”
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4
D-12 Mechanism Design Issues for Minimally Invasive Surgical Robots
Published in Journal of biomechanics (2010)Get full text
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5
High efficiency and improved ESD characteristics of GaN-based LEDs with naturally textured surface grown by MOCVD
Published in IEEE photonics technology letters (01-06-2006)“…The following paper presents a study on GaN-based light-emitting diodes (LEDs) with naturally textured surface grown by metal-organic chemical vapor…”
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6
InGaN-GaN MQW LEDs with Si treatment
Published in IEEE photonics technology letters (01-08-2005)“…Surface morphologies of the metal-organic chemical vapor deposition-grown p-GaN layers with and without Si treatment were investigated by atomic force…”
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7
Influence of Si-doping on the characteristics of InGaN-GaN multiple quantum-well blue light emitting diodes
Published in IEEE journal of quantum electronics (01-05-2002)“…A detailed study on the effects of Si-doping in the GaN barrier layers of InGaN-GaN multiquantum well (MQW) light-emitting diodes (LEDs) has been performed…”
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8
White-light emission from InGaN-GaN multiquantum-well light-emitting diodes with Si and Zn codoped active well layer
Published in IEEE photonics technology letters (01-04-2002)“…Si and Zn codoped In/sub x/Ga/sub 1-x/N-GaN multiple-quantum-well (MQW) light-emitting diode (LED) structures were grown by metal-organic vapor phase epitaxy…”
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9
Nitride-based LEDs with an SPS tunneling contact Layer and an ITO transparent contact
Published in IEEE photonics technology letters (01-04-2004)“…The indium-tin-oxide [ITO(80 nm)] and Ni(5 nm)-Au(10 nm) films were separately deposited on glass substrates, p-GaN layers, n/sup +/-InGaN-GaN…”
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10
Nitride-Based Near-Ultraviolet Mesh MQW Light-Emitting Diodes
Published in IEEE photonics technology letters (01-12-2007)“…We have demonstrated nitride-based near-ultraviolet mesh multiquantum-well (MQW) light-emitting diodes (LEDs) by etching through the MQW active region. With…”
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11
Stem rot of Indian borage caused by Phytopythium helicoides in Taiwan
Published in Acta horticulturae (01-09-2024)Get full text
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12
Lateral epitaxial patterned sapphire InGaN/GaN MQW LEDs
Published in Journal of crystal growth (01-02-2004)“…GaN epitaxial layers and InGaN/GaN multiquantum well blue light emitting diodes (LEDs) were prepared on both patterned sapphire substrates (PSS) and…”
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13
400-nm InGaN-GaN and InGaN-AlGaN multiquantum well light-emitting diodes
Published in IEEE journal of selected topics in quantum electronics (01-07-2002)“…The 400-nm In/sub 0.05/Ga/sub 0.95/N-GaN MQW light-emitting diode (LED) structure and In/sub 0.05/Ga/sub 0.95/N-Al/sub 0.1/Ga/sub 0.9/N LED structure were both…”
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14
Optical Simulation and Fabrication of Nitride-Based LEDs With the Inverted Pyramid Sidewalls
Published in IEEE journal of selected topics in quantum electronics (01-07-2009)“…In this study, the numerical and experimental demonstrations for the enhancement of light-extraction efficiency in nitride-based LEDs with randomly inverted…”
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15
Nitride-based light-emitting diodes with p-AlInGaN surface layers
Published in IEEE transactions on electron devices (01-10-2005)“…We have prepared bulk p-AlInGaN layers and light-emitting diodes (LEDs) with p-AlInGaN surface layers by metal-organic chemical vapor deposition. By properly…”
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16
Process characteristics of hydrolysis of chitosan in a continuous enzymatic membrane reactor
Published in Journal of food science (01-09-2004)“…Crude enzyme from Bacillus cereus NTU-FC-4 was used to hydrolyze chitosan of 66% deacetylation in a membrane reactor, operated at 45 degrees C and pH 5, to…”
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17
More than regulation of skewed Th1/Th2 cytokines in allergic asthma: A case treated with omalizumab
Published in Paediatric respiratory reviews (2010)Get full text
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18
Catalyst-free ZnO nanowires grown on a-plane GaN
Published in Vacuum (04-02-2010)“…ZnO nanowires were grown on a-plane GaN templates by chemical vapor deposition (CVD) without employing a catalyst. The a-plane GaN templates were pre-deposited…”
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Si and Zn co-doped InGaN-GaN white light-emitting diodes
Published in IEEE transactions on electron devices (01-02-2003)“…InGaN-GaN double heterostructure (DH) and multiquantum-well (MQW) light-emitting diodes (LEDs) with Si and Zn co-doped active well layers were prepared by…”
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20
InGaN/GaN tunnel-injection blue light-emitting diodes
Published in IEEE transactions on electron devices (01-06-2002)“…A charge asymmetric resonance tunneling (CART) structure was applied to nitride-based blue light emitting diodes (LEDs) to enhance their output efficiency. It…”
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