Search Results - "Kuniharu Nagashima, Kuniharu Nagashima"

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  1. 1

    IMPROVEMENT OF PROPERTY OF Pb(ZrxTi1-x)O3 THIN FILM PREPARED BY SOURCE GAS PULSE-INTRODUCED METALORGANIC CHEMICAL VAPOR DEPOSITION by Nagashima, K, Aratani, M, Funakubo, H

    “…Pb(Zr, Ti)O3 (PZT) thin films with Zr/(Zr+Ti) of 0.42 were prepared on (111)Pt/Ti/SiO2/Si substrates at 620 C by MOCVD. Authors attempted the pulse…”
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    Journal Article
  2. 2

    COMPOSITION CONTROL OF Pb(ZrxTi1-x)O3 THIN FILMS PREPARED BY METALORGANIC CHEMICAL VAPOR DEPOSITION by Nagashima, K, Funakubo, H

    “…PbO, ZrO2, TiO2 and Pb(ZrxTi1-x)O3 (PZT) films were prepared by MOCVD using Pb(C11H19O2)2, Zr(O*t-C4H9)4, Ti(O*i-C3H7)4 and O2 as source materials. The…”
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    Journal Article
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    PREPARATION OF Pb(Zrx, Ti1-x)O3 THIN FILMS BY SOURCE GAS PULSE-INTRODUCED METALORGANIC CHEMICAL VAPOR DEPOSITION by Aratani, M, Nagashima, K, Funakubo, H

    “…Authors prepared Pb(Zrx, Ti1-x)O3 [PZT] thin films on (111)Pt/Ti/SiO2/Si substrates at 620 C by MOCVD. PZT [Zr/(Zr+Ti)=0.68] thin films of different…”
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    Journal Article
  6. 6

    Super-multipoint thickness measurement technology using optical macro inspection system by Hamada, Takayuki, Nagashima, Kuniharu, Kanda, Naoki, Sato, Nao, Takeda, Kuniaki, Kawano, Junya

    “…In this report, a new technology of entire wafer surface film thickness measurement is explained. The technology provides an extra-fine map of entire wafer…”
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    Conference Proceeding
  7. 7

    PREPARATION OF Al-DOPED PbTiO3 THIN FILMS BY METALORGANIC CHEMICAL VAPOR DEPOSITION AND THEIR CHARACTERIZATION by Aratani, M, Nagashima, K, Iijima, T, Mizuhira, M, Funakubo, H

    “…Al-doped PbTiO3, Pb(Al, Ti)O3, thin films were prepared by MOCVD from the Pb(C11H19O2)2-Al(O.n-C3H7)3-Ti(O.i-C3H7)4-O2 system. Al content of the film could be…”
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    Journal Article
  8. 8

    Improvement of Property of Pb(Zr x Ti 1-x )O 3 Thin Film Prepared by Source Gas Pulse-Introduced Metalorganic Chemical Vapor Deposition by Nagashima, Kuniharu, Aratani, Masanori, Funakubo, Hiroshi

    Published in Japanese Journal of Applied Physics (01-10-2000)
    “…Pb(Zr, Ti)O 3 (PZT) thin films with Zr/(Zr+Ti) of 0.42 were prepared on (111)Pt/Ti/SiO 2 /Si substrates at 620°C by metalorganic chemical vapor deposition…”
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    Journal Article
  9. 9

    Composition Control of Pb(Zr x Ti 1-x )O 3 Thin Films Prepared by Metalorganic Chemical Vapor Deposition by Nagashima, Kuniharu, Funakubo, Hiroshi

    Published in Japanese Journal of Applied Physics (01-01-2000)
    “…PbO, ZrO 2 , TiO 2 and Pb(Zr x Ti 1- x )O 3 (PZT) films were prepared by metalorganic chemical vapor deposition (MOCVD) using Pb(C 11 H 19 O 2 ) 2 , Zr(O·t-C 4…”
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    Journal Article
  10. 10

    Preparation of Pb(Zr x , Ti 1-x )O 3 Thin Films by Source Gas Pulse-Introduced Metalorganic Chemical Vapor Deposition by Aratani, Masanori, Nagashima, Kuniharu, Funakubo, Hiroshi

    Published in Japanese Journal of Applied Physics (01-06-2001)
    “…We prepared Pb(Zr x , Ti 1- x )O 3 [PZT] thin films on (111)Pt/Ti/SiO 2 /Si substrates at 620°C by metalorganic chemical vapor deposition (MOCVD). PZT…”
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    Journal Article
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    Comparison of deposition behavior of Pb(Zr,Ti)O sub(3) films and its end-member-oxide films prepared by MOCVD by Funakubo, Hiroshi, Nagashima, Kuniharu, Shinozaki, Kazuo, Mizutani, Nobuyasu

    Published in Thin solid films (01-01-2000)
    “…Pb(Zr,Ti)O sub(3)(PZT) and end-member single oxide, PbO, ZrO sub(2) and TiO sub(2), films were deposited by metalorganic chemical vapor deposition (MOCVD) from…”
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    Journal Article
  14. 14

    Preparation of Al-doped PbTiO 3 Thin Films by Metalorganic Chemical Vapor Deposition and Their Characterization by Aratani, Masanori, Nagashima, Kuniharu, Iijima, Takashi, Mizuhira, Manabu, Funakubo, Hiroshi

    Published in Japanese Journal of Applied Physics (01-06-2000)
    “…Alminium-doped PbTiO 3 , Pb(Al, Ti)O 3 , thin films were prepared by metalorganic chemical vapor deposition from the Pb(C 11 H 19 O 2 ) 2 –Al(O·n-C 3 H 7 ) 3…”
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    Journal Article