Search Results - "Kuniharu Nagashima, Kuniharu Nagashima"
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IMPROVEMENT OF PROPERTY OF Pb(ZrxTi1-x)O3 THIN FILM PREPARED BY SOURCE GAS PULSE-INTRODUCED METALORGANIC CHEMICAL VAPOR DEPOSITION
Published in Jpn.J.Appl.Phys ,Part 2. Vol. 39, no. 10A, pp. L996-L998. 2000 (01-01-2000)“…Pb(Zr, Ti)O3 (PZT) thin films with Zr/(Zr+Ti) of 0.42 were prepared on (111)Pt/Ti/SiO2/Si substrates at 620 C by MOCVD. Authors attempted the pulse…”
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COMPOSITION CONTROL OF Pb(ZrxTi1-x)O3 THIN FILMS PREPARED BY METALORGANIC CHEMICAL VAPOR DEPOSITION
Published in Jpn.J.Appl.Phys ,Part 1. Vol. 39, no. 1, pp. 212-216. 2000 (01-01-2000)“…PbO, ZrO2, TiO2 and Pb(ZrxTi1-x)O3 (PZT) films were prepared by MOCVD using Pb(C11H19O2)2, Zr(O*t-C4H9)4, Ti(O*i-C3H7)4 and O2 as source materials. The…”
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Simultaneous Observation of Ferroelectric Domain Patterns by Scanning Nonlinear Dielectric Microscope and Surface Morphology by Atomic Force Microscope
Published in Japanese Journal of Applied Physics (2000)“…A new type of scanning nonlinear dielectric microscope (SNDM), with an additional function of simultaneous observations of surface morphology, has been…”
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Epitaxially grown ferroelectric thin films for memory applications (ferroelectric random access memories)
Published in Phase transitions (01-07-2008)“…Tetragonal Pb(Zr, Ti)O 3 films were epitaxially grown on SrRuO 3 -coated SrTiO 3 substrates by metal organic chemical vapor deposition. Perfect…”
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PREPARATION OF Pb(Zrx, Ti1-x)O3 THIN FILMS BY SOURCE GAS PULSE-INTRODUCED METALORGANIC CHEMICAL VAPOR DEPOSITION
Published in Jpn.J.Appl.Phys ,Part 1. Vol. 40, no. 6A, pp. 4126-4130. 2001 (2001)“…Authors prepared Pb(Zrx, Ti1-x)O3 [PZT] thin films on (111)Pt/Ti/SiO2/Si substrates at 620 C by MOCVD. PZT [Zr/(Zr+Ti)=0.68] thin films of different…”
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Super-multipoint thickness measurement technology using optical macro inspection system
Published in 2018 International Symposium on Semiconductor Manufacturing (ISSM) (01-12-2018)“…In this report, a new technology of entire wafer surface film thickness measurement is explained. The technology provides an extra-fine map of entire wafer…”
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Conference Proceeding -
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PREPARATION OF Al-DOPED PbTiO3 THIN FILMS BY METALORGANIC CHEMICAL VAPOR DEPOSITION AND THEIR CHARACTERIZATION
Published in Jpn.J.Appl.Phys ,Part 1. Vol. 39, no. 6A, pp. 3591-3595. 2000 (2000)“…Al-doped PbTiO3, Pb(Al, Ti)O3, thin films were prepared by MOCVD from the Pb(C11H19O2)2-Al(O.n-C3H7)3-Ti(O.i-C3H7)4-O2 system. Al content of the film could be…”
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Improvement of Property of Pb(Zr x Ti 1-x )O 3 Thin Film Prepared by Source Gas Pulse-Introduced Metalorganic Chemical Vapor Deposition
Published in Japanese Journal of Applied Physics (01-10-2000)“…Pb(Zr, Ti)O 3 (PZT) thin films with Zr/(Zr+Ti) of 0.42 were prepared on (111)Pt/Ti/SiO 2 /Si substrates at 620°C by metalorganic chemical vapor deposition…”
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Composition Control of Pb(Zr x Ti 1-x )O 3 Thin Films Prepared by Metalorganic Chemical Vapor Deposition
Published in Japanese Journal of Applied Physics (01-01-2000)“…PbO, ZrO 2 , TiO 2 and Pb(Zr x Ti 1- x )O 3 (PZT) films were prepared by metalorganic chemical vapor deposition (MOCVD) using Pb(C 11 H 19 O 2 ) 2 , Zr(O·t-C 4…”
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Preparation of Pb(Zr x , Ti 1-x )O 3 Thin Films by Source Gas Pulse-Introduced Metalorganic Chemical Vapor Deposition
Published in Japanese Journal of Applied Physics (01-06-2001)“…We prepared Pb(Zr x , Ti 1- x )O 3 [PZT] thin films on (111)Pt/Ti/SiO 2 /Si substrates at 620°C by metalorganic chemical vapor deposition (MOCVD). PZT…”
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Comparison of deposition behavior of Pb(Zr, Ti)O3 films and its end-member-oxide films prepared by MOCVD
Published in Thin solid films (15-06-2000)Get full text
Conference Proceeding -
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Comparison of deposition behavior of Pb(Zr,Ti)O 3 films and its end-member-oxide films prepared by MOCVD
Published in Thin solid films (15-06-2000)Get full text
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Comparison of deposition behavior of Pb(Zr,Ti)O sub(3) films and its end-member-oxide films prepared by MOCVD
Published in Thin solid films (01-01-2000)“…Pb(Zr,Ti)O sub(3)(PZT) and end-member single oxide, PbO, ZrO sub(2) and TiO sub(2), films were deposited by metalorganic chemical vapor deposition (MOCVD) from…”
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Preparation of Al-doped PbTiO 3 Thin Films by Metalorganic Chemical Vapor Deposition and Their Characterization
Published in Japanese Journal of Applied Physics (01-06-2000)“…Alminium-doped PbTiO 3 , Pb(Al, Ti)O 3 , thin films were prepared by metalorganic chemical vapor deposition from the Pb(C 11 H 19 O 2 ) 2 –Al(O·n-C 3 H 7 ) 3…”
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