Search Results - "Kulikov, D.V."
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Methodological approaches to carbon footprint assessment and certification of low carbon hydrogen
Published in International journal of hydrogen energy (27-12-2024)“…The article reviews existing approaches to low-carbon hydrogen certification and offers recommendations for their improvement based on an assessment of the…”
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2
Evolution of subsurface nanocavities in copper under argon bombardment and annealing
Published in Applied surface science (15-02-2013)“…► Vacancy–argon complexes are formed in copper under Ar irradiation at room temperature. ► Nanocavities appears due to diffusion of vacancy–argon complexes at…”
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3
Small defects in YBCO single crystals: Tc after neutron irradiation and annealing
Published in Physica. C, Superconductivity (01-08-1997)Get full text
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Thermodynamic properties of mixtures containing ionic liquids. Activity coefficients at infinite dilution of polar solutes in 4-methyl- N-butyl-pyridinium tetrafluoroborate using gas–liquid chromatography
Published in The Journal of chemical thermodynamics (01-08-2002)“…Activity coefficients at infinite dilutionγi∞ of the linear and branched C 1to C 6alcohols, acetone, acetonitrile, ethylacetate, alkylethers, and…”
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5
Theoretical analysis of the formation of impurity precipitates in nanocavities. I. thermodynamic analysis
Published in Technical physics (2013)“…The formation of the impurity phase in materials containing nanopores is investigated theoretically. The formation of impurity clusters on the inner surface of…”
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Theoretical analysis of impurity precipitation in nanopores in crystals. II: Kinetics of impurity cluster growth in pores
Published in Technical physics (01-03-2013)“…The kinetics of the formation of impurity clusters in subsurface nanopores in crystals is studied theoretically. A physical model of precipitation of the…”
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7
Kinetic model of growth of GaAs nanowires
Published in Technical physics (2010)“…A kinetic model of growth and formation of the crystal structure of gallium arsenide nanowires by molecular beam epitaxy on surfaces activated by Au drops is…”
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8
Optoelectronic method of contactless reconstruction of the surface profile of complexly shaped three-dimensional objects
Published in Measurement techniques (01-10-2010)“…An optoelectronic method of contactless reconstruction of the surface profile of complexly shaped threedimensional objects with the use of structured light,…”
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9
Computer simulation of neutron transmutation doping of isotopically engineered heterostructures
Published in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (01-01-2005)“…Neutron transmutation doping (NTD) of silicon-based isotopically engineered heterostructures is a powerful technique for the creation of the semiconductor…”
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10
Changes in the transition temperature after irradiation and annealing in single crystalline YBa 2Cu 3O 7− δ
Published in Physica. C, Superconductivity (2001)“…We present a model for the defect dynamics in YBa 2Cu 3O 7− δ crystals elucidating the changes in the transition temperature after neutron irradiation and…”
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Changes in the transition temperature after irradiation and annealing in single crystalline YBa2Cu3O7−δ
Published in Physica. C, Superconductivity (15-06-2001)Get full text
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12
The influence of the implantation sequence on the (SiC)1−x(AlN)x formation
Published in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (02-05-2000)“…The influence of the implantation sequence on the defect and implant distribution during (SiC)1−x(AlN)x formation was studied by Rutherford backscattering…”
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13
Computer simulation of transition from h-BN TO c-BN during ion beam assisted deposition
Published in Vacuum (01-04-1999)“…A model is proposed of c-BN growth during the ion Beam assisted deposition procces. This phase appears when N and B atoms in h-BN create inserted ab-planes…”
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Theoretical and experimental investigations of defect evolution in silicon carbide during N + and Al + ion implantation taking into account internal stress fields
Published in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (01-05-2001)“…A theoretical model is developed which allows to describe the defect evolution in silicon carbide implanted with high doses of nitrogen and aluminium ions and…”
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15
Solid petroleum residue as macroscopic model systems for the study of microstructure in metal materials
Published in Materials science & engineering. A, Structural materials : properties, microstructure and processing (30-08-1997)“…Conventional character of dividing materials into crystal and amorphous is shown and principal correctness of comparison between metal materials and special…”
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Modelling high-temperature co-implantation of N + and Al + ions in silicon carbide: the effect of stress on the implant and damage distributions
Published in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (1999)“…This work is an initial attempt to model the fundamental processes that occur when SiC is implanted at elevated substrate temperatures T i (200°–800°) with…”
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17
Small defects in YBCO single crystals: T c after neutron irradiation and annealing
Published in Physica. C, Superconductivity (01-08-1997)“…Neutron irradiation of HTSs creates a wide spectrum of defect sizes. In this work, the influence of small defects on the critical temperature is investigated…”
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