Search Results - "Kukushkin, A S"

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  1. 1

    Physics basis and design of the ITER plasma-facing components by Pitts, R.A., Carpentier, S., Escourbiac, F., Hirai, T., Komarov, V., Kukushkin, A.S., Lisgo, S., Loarte, A., Merola, M., Mitteau, R., Raffray, A.R., Shimada, M., Stangeby, P.C.

    Published in Journal of nuclear materials (01-08-2011)
    “…In ITER, as in any tokamak, the first wall and divertor plasma-facing components (PFC) must provide adequate protection of in-vessel structures, sufficient…”
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    Journal Article Conference Proceeding
  2. 2

    A New Method of Growing AlN, GaN, and AlGaN Bulk Crystals Using Hybrid SiC/Si Substrates by Kukushkin, S. A., Sharofidinov, Sh. Sh

    Published in Physics of the solid state (01-12-2019)
    “…The main principles of a new method of growing bulk single-crystal AlN, AlGaN, and GaN films with thickness from 100 μm and more on silicon substrates with a…”
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    Journal Article
  3. 3

    Finalizing the ITER divertor design: The key role of SOLPS modeling by Kukushkin, A.S., Pacher, H.D., Kotov, V., Pacher, G.W., Reiter, D.

    Published in Fusion engineering and design (01-12-2011)
    “…► This is a review of the development of edge plasma modeling at ITER and of its interaction with the evolving divertor design. ► The SOLPS (B2-Eirene) code…”
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    Journal Article
  4. 4

    Epitaxial Silicon Carbide on Silicon. Method of Coordinated Substitution of Atoms (A Review) by Kukushkin, S. A., Osipov, A. V.

    Published in Russian journal of general chemistry (01-04-2022)
    “…A review of advances in the growth of SiC epitaxial films on silicon is presented. All the main classical methods used at present to grow SiC films on silicon…”
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    Journal Article
  5. 5

    Mechanism of Diffusion of Carbon and Silicon Monooxides in a Cubic Silicon Carbide Crystal by Kukushkin, S. A., Osipov, A. V.

    Published in Physics of the solid state (01-12-2019)
    “…The main processes that occur during diffusion of gaseous carbon CO and silicon SiO monoxides through a layer of a single-crystal silicon carbide SiC of the…”
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    Journal Article
  6. 6

    International Conference “Mechanisms and Nonlinear Problems of Nucleation and Growth of Crystals and Thin Films” Dedicated to the Memory of Professor V.V. Slezov, an Outstanding Theoretical Physicist by Davydov, L. N., Kukushkin, S. A.

    Published in Physics of the solid state (01-12-2019)
    “…This issue of Physics of the Solid State publishes the proceedings of the International Conference “Mechanisms and Nonlinear Problems of Nucleation and Growth…”
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    Journal Article
  7. 7

    Microscopic Description of the Mechanism of Transition between the 2H and 4H Polytypes of Silicon Carbide by Kukushkin, S. A., Osipov, A. V.

    Published in Physics of the solid state (01-03-2019)
    “…— The mechanism of displacement of one close-packed SiC layer from one minimum position to another on the example of SiC polytype transition 2 H → 4 H has been…”
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    Journal Article
  8. 8

    Phase Transitions in Silicon-Carbide Epitaxial Layers Grown on a Silicon Substrate by the Method of the Coordinated Substitution of Atoms by Bagraev, N. T., Kukushkin, S. A., Osipov, A. V., Ugolkov, V. L.

    Published in Semiconductors (Woodbury, N.Y.) (2022)
    “…— The temperature dependences of the longitudinal resistance and heat capacity of silicon-carbide epitaxial films grown on single-crystal silicon substrates by…”
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    Journal Article
  9. 9

    Terahertz Emission from Silicon Carbide Nanostructures by Bagraev, N. T., Kukushkin, S. A., Osipov, A. V., Klyachkin, L. E., Malyarenko, A. M., Khromov, V. S.

    Published in Semiconductors (Woodbury, N.Y.) (01-08-2023)
    “…For the first time, electroluminescence detected in the middle and far infrared ranges from silicon carbide nanostructures on silicon, obtained in the…”
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    Journal Article
  10. 10

    On the Mechanism of the Vapor–Solid–Solid Growth of Au-Catalyzed GaAs Nanowires by Koryakin, A. A., Kukushkin, S. A., Sibirev, N. V.

    Published in Semiconductors (Woodbury, N.Y.) (01-03-2019)
    “…The mechanism of the vapor–solid–solid growth of Au-catalyzed GaAs nanowires in the temperature range of 420–450°C is investigated. For the first time, the…”
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    Journal Article
  11. 11

    Magnetic Properties of Thin Epitaxial SiC Layers Grown by the Atom-Substitution Method on Single-Crystal Silicon Surfaces by Bagraev, N. T., Kukushkin, S. A., Osipov, A. V., Romanov, V. V., Klyachkin, L. E., Malyarenko, A. M., Khromov, V. S.

    Published in Semiconductors (Woodbury, N.Y.) (01-02-2021)
    “…A cycle of experimental investigations is carried out, specifically, the measurements and analysis of field dependences of the static magnetic susceptibility…”
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    Journal Article
  12. 12

    Techniques for Polytypic Transformations in Silicon Carbide by Kukushkin, S. A., Osipov, A. V.

    Published in Physics of the solid state (01-08-2019)
    “…— Two main polytype transformations in silicon carbide, namely, 2H → 6H and 3C → 6H, have been studied by ab initio methods. It has been shown that the…”
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    Journal Article
  13. 13

    Registration of Terahertz Irradiation with Silicon Carbide Nanostructures by Bagraev, N. T., Kukushkin, S. A., Osipov, A. V., Klyachkin, L. E., Malyarenko, A. M., Khromov, V. S.

    Published in Semiconductors (Woodbury, N.Y.) (01-04-2023)
    “…The response to external terahertz (THz) irradiation from the silicon carbide nanostructures prepared by the method of substitution of atoms on silicon is…”
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    Journal Article
  14. 14

    Study of Elastic Properties of SiC Films Synthesized on Si Substrates by the Method of Atomic Substitution by Grashchenko, A. S., Kukushkin, S. A., Osipov, A. V.

    Published in Physics of the solid state (01-12-2019)
    “…The elastic properties of nanoscale silicon carbide film grown on a silicon substrate by the method of atomic substitution were studied. The Young modulus of…”
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    Journal Article
  15. 15

    Change in Elastic Deformations in SiC Films during Their Growth by the Coordinated Atomic Substitution Method on Si Substrates by Eremeev, Yu. A., Vorobev, M. G., Grashchenko, A. S., Semencha, A. V., Osipov, A. V., Kukushkin, S. A.

    Published in Physics of the solid state (01-09-2022)
    “…Consecutive stages of synthesizing epitaxial SiC films on n -type Si(111) and p -type Si(111) surfaces in a mixture of gaseous carbon monoxide and silane are…”
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    Journal Article
  16. 16

    Aromatic-Like Carbon Nanostructures Created on the Vicinal SiC Surfaces by Benemanskaya, G. V., Kukushkin, S. A., Timoshnev, S. N.

    Published in Physics of the solid state (01-12-2019)
    “…Electronic structure of the ultrathin Cs, Ba/SiC(111)-4°, 8° interfaces have been studied in situ in an ultrahigh vacuum using synchrotron-based photoelectron…”
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    Journal Article
  17. 17

    Two-Stage Conversion of Silicon to Nanostructured Carbon by the Method of Coordinated Atomic Substitution by Kukushkin, S. A., Osipov, A. V., Feoktistov, N. A.

    Published in Physics of the solid state (01-03-2019)
    “…— A fundamentally new method of obtaining epitaxial layers of nanostructured carbon on silicon substrates has been considered. Epitaxial growth in the case of…”
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    Journal Article
  18. 18

    Modelling of beryllium erosion–redeposition on ITER first wall panels by Carpentier, S., Pitts, R.A., Stangeby, P.C., Elder, J.D., Kukushkin, A.S., Lisgo, S., Fundamenski, W., Moulton, D.

    Published in Journal of nuclear materials (01-08-2011)
    “…Unlike any current operating tokamak, ITER will operate long pulse, high performance discharges with an almost conformal, shaped and full beryllium first wall…”
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    Journal Article Conference Proceeding
  19. 19

    Simulation of Fuel Flows in Injection Systems of Demo-FNS Hybrid Facility Involving Coupled Modeling of the Core and Divertor Plasmas by Ananyev, S. S., Dnestrovskij, A. Yu, Kukushkin, A. S., Spitsyn, A. V., Kuteev, B. V.

    Published in Physics of atomic nuclei (01-12-2020)
    “…The FC-FNS fuel cycle model is used to calculate the hydrogen isotope flows in the fuel systems of a tokamak-based fusion neutron source (DEMO-FNS) with…”
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    Journal Article
  20. 20

    Status of the ITER full-tungsten divertor shaping and heat load distribution analysis by Carpentier-Chouchana, S, Hirai, T, Escourbiac, F, Durocher, A, Fedosov, A, Ferrand, L, Firdaouss, M, Kocan, M, Kukushkin, A S, Jokinen, T, Komarov, V, Lehnen, M, Merola, M, Mitteau, R, Pitts, R A, Stangeby, P C, Sugihara, M

    Published in Physica scripta (01-04-2014)
    “…In September 2011, the ITER Organization (IO) proposed to begin operation with a full-tungsten (W) armoured divertor, with the objective of taking a decision…”
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    Journal Article