The inverse-narrow-width effect of LOCOS isolated n-MOSFET in a high-concentration p-well

The inverse-narrow-width effect (INWE) of a LOCOS-isolated n-MOSFET formed in high concentration p-wells is described. The threshold behavior is characterized as a function of the concentration of p-well, using experimental data and three-dimensional process/device simulations. In a high-concentrati...

Full description

Saved in:

Bibliographic Details
Published in:	IEEE electron device letters Vol. 13; no. 12; pp. 636 - 638
Main Authors:	Ohe, K., Yabu, T., Kugo, S., Umimoto, H., Odanaka, S.
Format:	Journal Article
Language:	English
Published:	New York, NY IEEE 01-12-1992 Institute of Electrical and Electronics Engineers
Subjects:	Applied sciences Boron Doping profiles Electronics Exact sciences and technology Implants Impurities Length measurement MOSFET circuits Resists Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Semiconductor films Threshold voltage Transistors Voltage measurement Voltage threshold Field effect transistor Computer simulation Potential well n channel MOS transistor Charge carrier concentration
Online Access:	Get full text
Tags:	Add Tag No Tags, Be the first to tag this record!

Description
Summary:	The inverse-narrow-width effect (INWE) of a LOCOS-isolated n-MOSFET formed in high concentration p-wells is described. The threshold behavior is characterized as a function of the concentration of p-well, using experimental data and three-dimensional process/device simulations. In a high-concentration p-well, the devices with a LOCOS isolation show the INWE, which was observed in trench-isolated devices. This effect is enhanced with increase of the p-well concentration. The INWE in the LOCOS-isolated MOSFET is explained by the boron segregation phenomenon during LOCOS process and boron redistribution.< >
Bibliography:	ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23
ISSN:	0741-3106 1558-0563
DOI:	10.1109/55.192869