Search Results - "Kuen-Ting Shiu"

Epitaxial lift-off process for gallium arsenide substrate reuse and flexible electronics by Cheng, Cheng-Wei, Shiu, Kuen-Ting, Li, Ning, Han, Shu-Jen, Shi, Leathen, Sadana, Devendra K.

“…Epitaxial lift-off process enables the separation of III–V device layers from gallium arsenide substrates and has been extensively explored to avoid the high…”
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Cubic Phase GaN on Nano-grooved Si (100) via Maskless Selective Area Epitaxy by Bayram, Can, Ott, John A., Shiu, Kuen-Ting, Cheng, Cheng-Wei, Zhu, Yu, Kim, Jeehwan, Razeghi, Manijeh, Sadana, Devendra K.

“…A method of forming cubic phase (zinc blende) GaN (referred as c‐GaN) on a CMOS‐compatible on‐axis Si (100) substrate is reported. Conventional GaN materials…”
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Thermodynamic limits of quantum photovoltaic cell efficiency by Wei, Guodan, Shiu, Kuen-Ting, Giebink, Noel C., Forrest, Stephen R.

“…The intermediate band solar cell has been proposed as an ultrahigh efficiency source of energy due to the possibility of absorption of two sequential…”
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Multiple growths of epitaxial lift-off solar cells from a single InP substrate by Lee, Kyusang, Shiu, Kuen-Ting, Zimmerman, Jeramy D., Renshaw, Christopher K., Forrest, Stephen R.

“…We demonstrate multiple growths of flexible, thin-film indium tin oxide-InP Schottky-barrier solar cells on a single InP wafer via epitaxial lift-off (ELO)…”
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A Four-FET Method for Extracting Mobility in FETs Without Field Oxide by Majumdar, Amlan, Ko-Tao Lee, Cheng-Wei Cheng, Kuen-Ting Shiu, Sadana, Devendra K., Leobandung, Effendi

“…Many fabricated III-V MOSFETs have electrically thin field oxide (FOX) that leads to parasitic currents and parasitic capacitances. When extracting…”
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Ultrathin film, high specific power InP solar cells on flexible plastic substrates by Shiu, Kuen-Ting, Zimmerman, Jeramy, Wang, Hongyu, Forrest, Stephen R.

“…We demonstrate ultrathin-film, single-crystal InP Schottky-type solar cells mounted on flexible plastic substrates. The lightly p-doped InP cell is grown…”
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CMOS-Compatible Self-Aligned In0.53Ga0.47As MOSFETs With Gate Lengths Down to 30 nm by Majumdar, Amlan, Yanning Sun, Cheng-Wei Cheng, Young-Hee Kim, Rana, Uzma, Martin, Ryan M., Bruce, Robert L., Kuen-Ting Shiu, Yu Zhu, Farmer, Damon B., Hopstaken, Marinus, Joseph, Eric A., de Souza, Joel P., Frank, Martin M., Szu-Lin Cheng, Kobayashi, Masaharu, Duch, Elizabeth A., Sadana, Devendra K., Dae-Gyu Park, Leobandung, Effendi

“…We demonstrate self-aligned fully-depleted 20-nm-thick In 0.53 Ga 0.47 As-channel MOSFETs using CMOS-compatible device structures and manufacturable process…”
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Integratable High Linearity Compact Waveguide Coupled Tapered InGaAsP Photodetectors by Agashe, S.S., Kuen-Ting Shiu, Forrest, S.R.

“…We investigate high linear response tapered photodiodes composed of bulk and multiquantum-well absorption layers based on the integratable asymmetric twin…”
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Evidence of cascaded emission in a dual-wavelength quantum cascade laser by Franz, Kale J., Wasserman, Daniel, Hoffman, Anthony J., Jangraw, David C., Shiu, Kuen-Ting, Forrest, Stephen R., Gmachl, Claire

“…This letter reports on a quantum cascade laser that exhibits simultaneous dual-wavelength emission from two consecutive optical transitions in each active…”
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Gallium Nitride: Cubic Phase GaN on Nano-grooved Si (100) via Maskless Selective Area Epitaxy (Adv. Funct. Mater. 28/2014) by Bayram, Can, Ott, John A., Shiu, Kuen-Ting, Cheng, Cheng-Wei, Zhu, Yu, Kim, Jeehwan, Razeghi, Manijeh, Sadana, Devendra K.

“…Gallium nitride is integrated on a CMOS‐compatible Silicon (100) substrate. On page 4492, C. Bayram et al. demonstrate thermodynamically stable, stress‐free,…”
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Response to “Comment on ‘Thermodynamic limits of quantum photovoltaic cell efficiency’” [Appl. Phys. Lett.92, 066101 (2008)] by Wei, Guodan, Shiu, Kuen-Ting, Giebink, Noel C., Forrest, Stephen R.

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Multiple growths of epitaxial lift-off solar cells from a single InP substrate by Lee, Kyusang, Shiu, Kuen-Ting, Zimmerman, Jeramy D., Renshaw, Christopher K., Forrest, Stephen R.

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CMOS-Compatible Self-Aligned In sub(0.53)Ga sub(0.47)As MOSFETs With Gate Lengths Down to 30 nm by Majumdar, Amlan, Sun, Yanning, Cheng, Cheng-Wei, Kim, Young-Hee, Rana, Uzma, Martin, Ryan M, Bruce, Robert L, Shiu, Kuen-Ting, Zhu, Yu, Farmer, Damon B, Hopstaken, Marinus, Joseph, Eric A, de Souza, Joel P, Frank, Martin M, Cheng, Szu-Lin, Kobayashi, Masaharu, Duch, Elizabeth A, Sadana, Devendra K, Park, Dae-Gyu, Leobandung, Effendi

“…We demonstrate self-aligned fully-depleted 20-nm-thick In sub(0.53)Ga sub(0.47)As-channe l MOSFETs using CMOS-compatible device structures and manufacturable…”
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Multiple growths of epitaxial lift-off solar cells from a single InP substrate by Lee, Kyusang, Shiu, Kuen-Ting, Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, Zimmerman, Jeramy D., Forrest, Stephen R., Department of Material Science and Engineering, and Physics, University of Michigan, Ann Arbor, Michigan 48109, Renshaw, Christopher K.

“…We demonstrate multiple growths of flexible, thin-film indium tin oxide-InP Schottky-barrier solar cells on a single InP wafer via epitaxial lift-off (ELO)…”
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Cascaded Emission from a Dual-Wavelength Quantum Cascade Laser by Franz, K.J., Wasserman, D., Hoffman, A.J., Gmachl, C., Kuen-Ting Shiu, Forrest, S.R.

“…We present evidence for "cascaded" laser emission in quantum cascade lasers, demonstrating a dual wavelength (~9.6 μm and ~8.2 μm) laser with two consecutive…”
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InP-based material for optoelectronic integration and solar energy conversion by Shiu, Kuen-Ting

“…The purpose of this thesis is to utilize InP-based materials to both process the lightwave signals with large scale photonic integrated circuits and harvest…”
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InP-based material for optoelectronic integration and solar energy conversion by Shiu, Kuen-Ting

“…The purpose of this thesis is to utilize InP-based materials to both process the lightwave signals with large scale photonic integrated circuits and harvest…”
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