Search Results - "Kudryk Ya.Ya"

Influence of parameters inherent to ohmic contacts on properties of microwave avalanche transit-time diodes by Kudryk, Ya.Ya

“…In this paper, a review of microwave avalanche transit-time diode (IMPATT diode) structures has been presented. The structure of IMPATT diode with a sharp p-n…”
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Impact of grain-dependent boron uptake on the nano-electrical and local optical properties of polycrystalline boron doped CVD diamond by Nikolenko, A.S., Lytvyn, P.M., Strelchuk, V.V., Danylenko, I.M., Malyuta, S.V., Kudryk, Ya.Ya, Stubrov, Yu.Yu, Kovalenko, T.V., Ivakhnenko, S.O.

“…Boron-doped diamond (BDD) films grown by chemical vapor deposition (CVD) exhibit unique electrical and optical properties owing to the non-uniform uptake of…”
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Manufacturing technology for contacts to silicon carbide by Kudryk Ya.Ya, Bigun R. I., Kudryk R. Ya

“…The authors classified the results of investigations of resistivity of ohmic contacts to silicon carbide made without any semiconductor surface modification. A…”
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Determination of the Schottky barrier height in diodes based on Au-TiB2-n-SiC 6H from the current-voltage and capacitance-voltage characteristics by Kudryk, Ya.Ya

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Negative temperature coefficient of breakdown voltage in the Au-Ti-n-n+ 6h SiC Schottky-barrier diodes by Belyaev, A.E., Boltovets, N.S., Konakova, R.V., Krivutsa, V.A., Kudryk, Ya.Ya, Lebedev, A.A., Milenin, V.V.

“…Temperature coefficient of breakdown voltage (TCBV) in the Au-Ti-n-n + -6H SiC diodes with Schottky barrier is investigated. It is shown that TCBV is negative…”
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Investigation of the electrical characteristics of reteroepitaxial structures as function of microrelief and manufacturing technology features by Dmitruk, N.L., Karimov, A.V., Konakova, R.V., Kudryk, Ya.Ya, Sachenko, A.V.

“…We studied, over a vide (77-400 K) temperature range, 1- V curves of photoelectric converter (solar cell) prototypes made on the basis of the…”
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On the Current Flow Mechanism in Au-TiBx-n-GaN-i-Al2O3 Schottky Barrier Diodes by Belyaev, A.E., Boltovets, N.S., Ivanov, V.N., Konakova, R.V., Kudryk, Ya.Ya, Milenin, V.V., Sveshnikov, Yu.N.

“…We investigated a current flow mechanism in the Au-TiB x - n -GaN- I -AI 2 O 3 Schottky barrier diodes, in which space-charge region width is much over the de…”
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Heat-Resistant Au-TiBx-n-GaN Schottky Diodes by Belyaev, A.E., Boltovets, N.S., Ivanov, V.N., Kladko, V.P., Konakova, R.V., Kudryk, Ya.Ya, Kuchuk, A.V., Lytvyn, O.S., Milenin, V.V., Sveshnikov, Yu.N.

“…We studied phase composition and parameters of the ohmic Au-TiB x -Al-Ti-n-GaN and barrier Au-TiB x -n-GaN contacts, both before and after rapid thermal…”
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Physics-Technological Fabrication Features and Parameters of InP MM-Wave Gunn Diodes by Arsentiev, I.N., Belyaev, A.E., Bobyl, A.V., Boltovets, N.S., Ivanov, V.N., Kovtonyuk, V.M., Konakova, R.V., Kudryk, Ya.Ya, Milenin, V.V., Tarasov, I.S., Markovskyi, E.P., Redko, R.A., Russu, E.V.

“…We developed (i) a technology to form Au-Ge-TiB x -Au ohmic contacts to indium phosphide Gunn diodes on the basis of n-n + -n ++ epitaxial structures made on…”
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New technological possibilities for formation of GaAs and InP epitaxial layers for Gunn diodes by Arsentiev, I.N., Belyaev, A.E., Bobyl, A.V., Boltovets, N.S., Ivanov, V.N., Konakova, R.V., Konnikov, S.G., Kudryk, Ya.Ya, Milenin, V.V., Taraso, I.S., Markovsky, E.P., Rusu, E.V.

“…We consider a novel technological approach to formation of structurally-perfect indium-phosphide and gallium-arsenide epitaxial n-layers grown on specially…”
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