Search Results - "Kudryk, Y.Y."

Peculiarities of current transport in boron-doped diamond Schottky diodes with hysteresis in current–voltage characteristics by Nikolenko, A.S., Strelchuk, V.V., Kudryk, Y.Y., Danylenko, I.M., Belyaev, A.E., Kovalenko, T.V., Lysakovskyi, V.V., Ivakhnenko, S.O., Dub, M.M., Sai, P.O., Knap, W.

“…The paper studies peculiarities of current transport in Au/Pt/Ni/diamond Schottky diodes with the hysteresis in current–voltage (I-V) characteristics and the…”
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Effect of surface roughness on the properties of ohmic contacts to GaAs by Dmitruk, N.L., Borkovskaya, O.Yu, Kladko, V.P., Konakova, R.V., Kudryk, Y.Y., Lytvyn, O.S., Milenin, V.V.

“…Au/Ge/TiB/sub x//Au ohmic contacts to n-GaAs with textured surface have been developed and investigated. Two types of microrelief morphology (quasi-grating and…”
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Ohmic and barrier contacts to SiC- and GaN-based microwave diodes by Boltovets, N.S., Lvanov, V.N., Sveshnikov, Y.N., Belyaev, A.E., Avksentiev, A.Y., Konakova, R.V., Kudryk, Y.Y., Kurakin, A.M., Milenin, V.V.

“…The Au-TiB/sub x/(Ti)-Al-Ti-n-GaN ohmic contacts and Au-ZrB/sub x/-n-6H-SiC barrier contacts were studied before and after rapid thermal annealing at T=700 and…”
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New manufacturing technology for InP epitaxial layers and properties of Schottky diodes made on their basis by Arsentiev, I.N., Bobyi, A.V., Boltovets, N.S., Ivanov, V.N., Konakova, R.V., Kudryk, Y.Y., Lytvyn, O.S., Milenin, V.V., Tarasov, I.S., Belyaev, A.E., Rusu, E.V.

“…A new technological approach to production of structurally perfect epitaxial films LPE-grown on "soft" porous n/sup +/-InP substrates is considered. We studied…”
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