Search Results - "Kudryavtsev, K E"

Investigation into Microwave Absorption in Semiconductors for Frequency-Multiplication Devices and Radiation-Output Control of Continuous and Pulsed Gyrotrons by Maremyanin, K. V., Parshin, V. V., Serov, E. A., Rumyantsev, V. V., Kudryavtsev, K. E., Dubinov, A. A., Fokin, A. P., Morosov, S. S., Aleshkin, V. Ya, Glyavin, M. Yu, Denisov, G. G., Morozov, S. V.

“…The results of experimental investigation into the dielectric losses in GaAs, InP:Fe, and Si semiconductor crystals in the millimeter wavelength range (80–260…”
Get full text

Highly doped InP as a low loss plasmonic material for mid-IR region by Panah, M E Aryaee, Takayama, O, Morozov, S V, Kudryavtsev, K E, Semenova, E S, Lavrinenko, A V

“…We study plasmonic properties of highly doped InP in the mid-infrared (IR) range. InP was grown by metal-organic vapor phase epitaxy (MOVPE) with the growth…”
Get full text

Temperature limitations for stimulated emission in 3–4 μm range due to threshold and non-threshold Auger recombination in HgTe/CdHgTe quantum wells by Kudryavtsev, K. E., Rumyantsev, V. V., Aleshkin, V. Ya, Dubinov, A. A., Utochkin, V. V., Fadeev, M. A., Mikhailov, N. N., Alymov, G., Svintsov, D., Gavrilenko, V. I., Morozov, S. V.

“…We report on the stimulated emission (SE) from HgTe/CdHgTe quantum well (QW) heterostructures up to 240 K at 3.7 μm wavelength. Based on the temperature…”
Get full text

Quantifying non-threshold Auger-recombination processes in mid-wavelength infrared range HgCdTe quantum wells by Kudryavtsev, K. E., Yantser, A. A., Fadeev, M. A., Rumyantsev, V. V., Dubinov, A. A., Aleshkin, V. Ya, Mikhailov, N. N., Dvoretsky, S. A., Gavrilenko, V. I., Morozov, S. V.

“…We study photoluminescence temperature quenching in HgTe/CdHgTe quantum wells (QWs) emitting at 3–4 μm wavelengths and recover temperature-dependent interband…”
Get full text

Optically pumped stimulated emission in HgCdTe-based quantum wells: Toward continuous wave lasing in very long-wavelength infrared range by Rumyantsev, V. V., Mazhukina, K. A., Utochkin, V. V., Kudryavtsev, K. E., Dubinov, A. A., Aleshkin, V. Ya, Razova, A. A., Kuritsin, D. I., Fadeev, M. A., Antonov, A. V., Mikhailov, N. N., Dvoretsky, S. A., Gavrilenko, V. I., Teppe, F., Morozov, S. V.

“…Amplified interband emission within the 14–24 μm range is investigated in HgCdTe-based quantum wells under optical pumping. Carrier lifetimes are shown to be…”
Get full text

Stimulated emission in the 2.8-3.5 μm wavelength range from Peltier cooled HgTe/CdHgTe quantum well heterostructures by Fadeev, M A, Rumyantsev, V V, Kadykov, A M, Dubinov, A A, Antonov, A V, Kudryavtsev, K E, Dvoretskii, S A, Mikhailov, N N, Gavrilenko, V I, Morozov, S V

“…We report stimulated emission in the 2.8-3.5 μm wavelength range from HgTe/CdHgTe quantum well (QW) heterostructures at temperatures available with…”
Get full text

Near-infrared stimulated emission from indium-rich InGaN layers grown by plasma-assisted MBE by Lobanov, D. N., Kudryavtsev, K. E., Kalinnikov, M. I., Krasilnikova, L. V., Yunin, P. A., Skorokhodov, E. V., Shaleev, M. V., Novikov, A. V., Andreev, B. A., Krasilnik, Z. F.

“…We report on the stimulated emission (SE) in the near-infrared range from the planar InGaN epitaxial layers grown on sapphire substrates. By varying the indium…”
Get full text

Features of Formation of InxGa1 –xN Bulk Layers in the Immiscibility Gap of Solid Solutions (x ~ 0.6) by Molecular Beam Epitaxy with Plasma Nitrogen Activation by Kalinnikov, M. A., Lobanov, D. N., Kudryavtsev, K. E., Andreev, B. A., Yunin, P. A., Krasilnikova, L. V., Novikov, A. V., Skorokhodov, E. V., Skorokhodov, Z. F.

“…In this paper, the features of the formation of bulk InGaN layers with an indium content of ~ 60% in the immiscibility gap of InGaN ternary solid solutions by…”
Get full text

Towards the indium nitride laser: obtaining infrared stimulated emission from planar monocrystalline InN structures by Andreev, B. A., Kudryavtsev, K. E., Yablonskiy, A. N., Lobanov, D. N., Bushuykin, P. A., Krasilnikova, L. V., Skorokhodov, E. V., Yunin, P. A., Novikov, A. V., Davydov, V. Yu, Krasilnik, Z. F.

“…The observation of a stimulated emission at interband transitions in monocrystalline n-InN layers under optical pumping is reported. The spectral position of…”
Get full text

Efficient long wavelength interband photoluminescence from HgCdTe epitaxial films at wavelengths up to 26  μ m by Morozov, S. V., Rumyantsev, V. V., Antonov, A. V., Maremyanin, K. V., Kudryavtsev, K. E., Krasilnikova, L. V., Mikhailov, N. N., Dvoretskii, S. A., Gavrilenko, V. I.

“…Photoluminescence (PL) and photoconductivity (PC) studies of Hg1−xCdxTe (0.19 ≤ x ≤ 0.23) epitaxial films are presented. Interband PL is observed at…”
Get full text

Stimulated Emission at a Wavelength of 2.86 μm from In(Sb, As)/In(Ga, Al)As/GaAs Metamorphic Quantum Wells under Optical Pumping by Solov’ev, V. A., Chernov, M. Yu, Morozov, S. V., Kudryavtsev, K. E., Sitnikova, A. A., Ivanov, S. V.

“…Metamorphic laser heterostructures In(Sb, As)/In 0.81 Ga 0.19 As/In 0.75 Al 0.25 As with InSb/InAs/InGaAs composite quantum wells based on submonolayer InSb…”
Get full text

Laser Generation at Wavelengths 4.1–5.1 μm of CdxHg1–xTe/CdyHg1–yTe Quantum-Well Heterostructures with Microdisk Resonators by Razova, A. A., Utochkin, V. V., Fadeev, M. A., Rumyantsev, V. V., Dubinov, A. A., Kudryavtsev, K. E., Shengurov, D. V., Morozova, E. E., Skorohodov, E. V., Mikhailov, N. N., Dvoretsky, S. A., Gavrilenko, V. I., Morozov, S. V.

“…Photoluminescence and laser emission spectra of CdHgTe solid-solution quantum-well structures with microdisk cavities of different diameters are demonstrated…”
Get full text

Submonolayer InGaAs/GaAs Quantum Dots Grown by MOCVD by Aleshkin, V. Ya, Baidus, N. V., Dubinov, A. A., Kudryavtsev, K. E., Nekorkin, S. M., Kruglov, A. V., Reunov, D. G.

“…The mode of the growth of InGaAs quantum dots by MOS-hydride epitaxy on GaAs substrates without a deviation and with a deviation of 2° is selected for laser…”
Get full text

Investigation of Stimulated Emission from HgTe/CdHgTe Quantum-Well Heterostructures in the 3–5 μm Atmospheric Transparency Window by Kushkov, L. A., Utochkin, V.V., Aleshkin, V. Ya, Dubinov, A. A., Kudryavtsev, K. E., Gavrilenko, V. I., Kulikov, N. S., Fadeev, M. A., Rumyantsev, V. V., Mikhailov, N. N., Dvoretskii, S. A., Razova, A. A., Morozov, S. V.

“…Stimulated emission based on interband transitions depending on the pumping wavelength is studied for heterostructures with Hg(Cd)Te/CdHgTe quantum wells in…”
Get full text

On the Application of Strain-Compensating GaAsP Layers for the Growth of InGaAs/GaAs Quantum-Well Laser Heterostructures Emitting at Wavelengths above 1100 nm on Artificial Ge/Si Substrates by Baidus, N. V., Aleshkin, V. Ya, Dubinov, A. A., Krasilnik, Z. F., Kudryavtsev, K. E., Nekorkin, S. M., Novikov, A. V., Rykov, A. V., Reunov, D. G., Shaleev, M. V., Yunin, P. A., Yurasov, D. V.

“…Stressed InGaAs/GaAs quantum-well laser structures are grown by gas-phase epitaxy from organometallic compounds on GaAs substrates and artificial Ge/Si…”
Get full text

Optical Properties of GaN Nanowires Grown by MBE on SiC/Si(111) Hybrid Substrate by Shtrom, I. V., Filosofov, N. G., Agekian, V. F., Smirnov, M. B., Serov, A. Yu, Reznik, R. R., Kudryavtsev, K. E., Cirlin, G. E.

“…The aim of this work is to demonstrate the fundamental possibility of Si-doped GaN nanowires growth on the buffer layer of silicon carbide on silicon substrate…”
Get full text

Formation and Properties of Locally Tensile Strained Ge Microstructures for Silicon Photonics by Novikov, A. V., Yurasov, D. V., Morozova, E. E., Skorohodov, E. V., Verbus, V. A., Yablonskiy, A. N., Baidakova, N. A., Gusev, N. S., Kudryavtsev, K. E., Nezhdanov, A. V., Mashin, A. I.

“…The formation and properties of locally tensile strained Ge microstructures (“microbridges”) based on Ge layers grown on silicon substrates are investigated…”
Get full text

Peculiarities of growing InGaAs/GaAs/AlGaAs laser structures by MOCVD on Ge/Si substrates by Baidus, N. V., Aleshkin, V. Ya, Dubinov, A. A., Kudryavtsev, K. E., Nekorkin, S. M., Novikov, A. V., Pavlov, D. A., Rykov, A. V., Sushkov, A. A., Shaleev, M. V., Yunin, P. A., Yurasov, D. V., Yablonskiy, A. N., Krasilnik, Z. F.

“…The growth of InGaAs/GaAs/AlGaAs laser structures by MOCVD at low pressures on Si(001) substrates with a Ge epitaxial metamorphic buffer layer of various…”
Get full text

Technology of the production of laser diodes based on GaAs/InGaAs/AlGaAs structures grown on a Ge/Si substrate by Aleshkin, V. Ya, Baidus, N. V., Dubinov, A. A., Kudryavtsev, K. E., Nekorkin, S. M., Novikov, A. V., Rykov, A. V., Samartsev, I. V., Fefelov, A. G., Yurasov, D. V., Krasilnik, Z. F.

“…InGaAs/GaAs/AlGaAs laser diodes with quantum wells are grown by the metal-organic chemical vapor deposition (MOCVD) method on an exact Si (001) substrate with…”
Get full text

Stimulated Emission at 1.3-μm Wavelength in Metamorphic InGaAs/InGaAsP Structure with Quantum Wells Grown on Ge/Si(001) Substrate by Aleshkin, V. Ya, Baidus, N. V., Vikhrova, O. V., Dubinov, A. A., Zvonkov, B. N., Krasilnik, Z. F., Kudryavtsev, K. E., Nekorkin, S. M., Novikov, A. V., Rykov, A. V., Samartsev, I. V., Yurasov, D. V.

“…A laser structure comprising metamorphic InGaAsP layer and InGaAs quantum wells on a non-inclined Si(001) substrate with relaxed Ge buffer layer has been grown…”
Get full text