$Modelling of X-ray diffraction curves for GaN nanowires on Si(111)$
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Modelling of X-ray diffraction curves for GaN nanowires on Si(111)

X-ray diffraction curves and reciprocal space maps from self induced GaN nanowires on Si(111) substrates were examined theoretically and experimentally. Numerical simulation shows how distribution of such NWs parameters as diameter, length, strain and orientation influence broadening of X-ray diffra...

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Bibliographic Details
Published in:	Journal of crystal growth Vol. 401; pp. 347 - 350
Main Authors:	Kladko, V.P., Kuchuk, А.V., Stanchu, H.V., Safriuk, N.V., Belyaev, A.E., Wierzbicka, A., Sobanska, M., Klosek, K., Zytkiewicz, Z.R.
Format:	Journal Article Conference Proceeding
Language:	English
Published:	Amsterdam Elsevier B.V 01-09-2014 Elsevier
Subjects:	A1. Computer simulation A1. High resolution X-ray diffraction A1. Nanostructures A3. Molecular beam epitaxy B1. Nitrides B2. Semiconducting III–V materials Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science; rheology Exact sciences and technology Materials science Methods of deposition of films and coatings; film growth and epitaxy Molecular, atomic, ion, and chemical beam epitaxy Nanoscale materials and structures: fabrication and characterization Other topics in nanoscale materials and structures Physics Quantum wires Structure of solids and liquids; crystallography Structure of specific crystalline solids A1. Computer simulation A3. Molecular beam epitaxy B1. Nitrides B2. Semiconducting III–V materials A1. High resolution X-ray diffraction A1. Nanostructures Reciprocal space Digital simulation Reciprocal lattice Theoretical study Computerized simulation XRD Nanostructures III-V compound B2. Semiconducting III-V materials Nitrides Experimental result Molecular beam epitaxy Nanowires Nanostructured materials III-V semiconductors Crystal structure
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Summary:	X-ray diffraction curves and reciprocal space maps from self induced GaN nanowires on Si(111) substrates were examined theoretically and experimentally. Numerical simulation shows how distribution of such NWs parameters as diameter, length, strain and orientation influence broadening of X-ray diffraction peak profiles. Calculated shape of symmetric 0002 GaN reciprocal space map well correlates with experimental result, which indicates the validity of selected theoretical model. •The X-ray diffraction curves for GaN nanowires on Si(111) were calculated.•Influence of GaN NW׳s mosaicity parameters on the XRD peak profiles was shown.•Good correlation between experimental and calculated XRD curves was obtained.
ISSN:	0022-0248 1873-5002
DOI:	10.1016/j.jcrysgro.2014.01.042