Search Results - "Krzyzewski, T.J"

Shape and surface morphology changes during the initial stages of encapsulation of InAs/GaAs quantum dots by Joyce, P.B, Krzyzewski, T.J, Steans, P.H, Bell, G.R, Neave, J.H, Jones, T.S

“…The change in shape and surface morphology of InAs/GaAs(0 0 1) quantum dots (QDs) during their initial encapsulation by GaAs has been studied using reflection…”
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Wetting layer evolution in InAs/GaAs( [formula omitted]) heteroepitaxy: effects of surface reconstruction and strain by Krzyzewski, T.J., Joyce, P.B., Bell, G.R., Jones, T.S.

“…InAs heteroepitaxy on the (2×4) and c(4×4) reconstructed surfaces of GaAs(0 0 1) has been studied using scanning tunnelling microscopy, with particular…”
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Understanding the growth mode transition in InAs/GaAs(0 0 1) quantum dot formation by Krzyzewski, T.J., Joyce, P.B., Bell, G.R., Jones, T.S.

“…Scanning tunneling microscopy has been used to monitor the growth by molecular beam epitaxy of InAs quantum dots (QDs) on GaAs(0 0 1) at and near the critical…”
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Growth rate effects on the size, composition and optical properties of InAs/GaAs quantum dots grown by molecular beam epitaxy by Joyce, P.B, Krzyzewski, T.J, Bell, G.R, Jones, T.S, Malik, S, Childs, D, Murray, R

“…The effect of the InAs deposition rate on the properties of InAs/GaAs quantum dots (QDs) grown on GaAs (0 0 1) substrates by molecular beam epitaxy has been…”
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Variations in critical coverage for InAs/GaAs quantum dot formation in bilayer structures by Joyce, P.B, Krzyzewski, T.J, Steans, P.H, Bell, G.R, Neave, J.H, Jones, T.S

“…Reflection high-energy electron diffraction and scanning tunnelling microscopy (STM) have been used to study InAs/GaAs quantum dot (QD) formation in bilayer QD…”
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Surface morphology and reconstruction changes during heteroepitaxial growth of InAs on GaAs(0 0 1)-(2×4) by Krzyzewski, T.J, Joyce, P.B, Bell, G.R, Jones, T.S

“…The evolution of the surface morphology and reconstruction during growth by molecular beam epitaxy of InAs on the GaAs(0 0 1)-(2×4) surface has been studied…”
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Atomic hydrogen cleaning of low-index GaAs surfaces by Khatiri, A., Krzyzewski, T.J., McConville, C.F., Jones, T.S.

“…The effects of atomic hydrogen (AH) exposure on epi-ready, low-index surface orientations of GaAs at 400 °C have been studied using reflection high-energy…”
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Atomic hydrogen cleaning of GaAs( [formula omitted]): a scanning tunnelling microscopy study by Khatiri, A, Ripalda, J.M, Krzyzewski, T.J, Bell, G.R, McConville, C.F, Jones, T.S

“…Reflection high-energy electron diffraction and scanning tunnelling microscopy have been used to study the cleaning of the native oxide from an epi-ready…”
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Hydrogen adsorption on GaAs(0 0 1)-c(4 × 4) by Khatiri, A., Ripalda, J.M., Krzyzewski, T.J., Jones, T.S.

“…Exposure of the As-terminated GaAs(0 0 1)-c(4 × 4) reconstructed surface to atomic hydrogen (H) at different substrate temperatures (50–480 °C) has been…”
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Nucleation and growth of InAs quantum dots on GaAs[001] by Jones, T.S., Krzyzewski, T.J., Joyce, P.B., Bell, G.R.

“…The formation of dislocation-free quantum dots (QDs) in material systems such as InAs/GaAs has attracted great interest because of the novel optoelectronic…”
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